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    DC and RF Hybrid Processing System
    81.
    发明申请
    DC and RF Hybrid Processing System 有权
    DC和RF混合处理系统

    公开(公告)号：US20110070665A1

    公开(公告)日：2011-03-24

    申请号：US12887576

    申请日：2010-09-22

    Applicant: Lee Chen ,  Merritt Funk

    Inventor： Lee Chen ,  Merritt Funk

    IPC: H01L21/66

    CPC classification number: H01J37/32027 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

    Abstract: The invention can provide apparatus and methods for processing substrates and/or wafers in real-time using at least one Direct Current (DC)/Radio Frequency (RF) Hybrid (DC/RFH) processing system and associated Direct Current/Radio Frequency Hybrid (DC/RFH) procedures and DC/RFH process parameters and/or DC/RFH models.

    Abstract translation: 本发明可以提供使用至少一个直流（DC）/射频（RF）混合（DC / RFH）处理系统和相关联的直流/射频混合（DC / RFH）处理系统来实时处理衬底和/或晶片的装置和方法 DC / RFH）程序和DC / RFH过程参数和/或DC / RFH模型。

    Creating a library for measuring a damaged structure formed on a wafer using optical metrology
    83.
    发明授权
    Creating a library for measuring a damaged structure formed on a wafer using optical metrology 失效
    使用光学测量法创建用于测量在晶圆上形成的损坏结构的库

    公开(公告)号：US07576851B2

    公开(公告)日：2009-08-18

    申请号：US11395636

    申请日：2006-03-30

    Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

    Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

    IPC: G01P3/36

    CPC classification number: G01N21/95607

    Abstract: A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.

    Abstract translation: 使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。 通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。 从第一损坏结构接收衍射光束。 基于接收的衍射光束获得测量的衍射信号。 计算第一个模拟衍射信号。 第一模拟衍射信号对应于第一损坏结构的假想轮廓。 假想轮廓包括未损坏的电介质部分和损坏的电介质部分。 将测量的衍射信号与第一模拟衍射信号进行比较。 如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是 存储在库中。

    Method of using a wafer-temperature-dependent profile library
    85.
    发明授权
    Method of using a wafer-temperature-dependent profile library 失效
    使用晶片温度依赖型谱库的方法

    公开(公告)号：US07451054B2

    公开(公告)日：2008-11-11

    申请号：US11668654

    申请日：2007-01-30

    Applicant: Sachin Deshpande ,  Merritt Funk

    Inventor： Sachin Deshpande ,  Merritt Funk

    IPC: G06F19/00

    CPC classification number: G03F7/70875 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70691

    Abstract: A method for facilitating an ODP measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on said wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying.

    Abstract translation: 一种用于促进半导体晶片的ODP测量的方法。 该方法包括获得在所述晶片上的测量位置的实时晶片特征数据，并且从晶片的测量位置内的结构检测测量的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。

    Process control using physical modules and virtual modules
    86.
    发明授权
    Process control using physical modules and virtual modules 有权
    使用物理模块和虚拟模块进行过程控制

    公开(公告)号：US07451011B2

    公开(公告)日：2008-11-11

    申请号：US10927514

    申请日：2004-08-27

    Applicant: Merritt Funk ,  Wesley Natzle

    Inventor： Merritt Funk ,  Wesley Natzle

    IPC: G06F19/00

    CPC classification number: H01L22/20 ,  G05B2219/45031

    Abstract: The invention relates to controlling a semiconductor processing system. Among other things, the invention relates to a run-to-run controller to create virtual modules to control a multi-pass process performed by a multi-chamber tool during the processing of a semiconductor wafer.

    Abstract translation: 本发明涉及控制半导体处理系统。 其中，本发明涉及一种运行到运行的控制器，用于创建虚拟模块以控制在半导体晶片的处理期间由多室工具执行的多遍处理。

    Dynamic metrology sampling with wafer uniformity control
    88.
    发明申请
    Dynamic metrology sampling with wafer uniformity control 审中-公开
    具有晶圆均匀性控制的动态计量采样

    公开(公告)号：US20070238201A1

    公开(公告)日：2007-10-11

    申请号：US11390415

    申请日：2006-03-28

    Applicant: Merritt Funk ,  Radha Sundararajan ,  Daniel Prager ,  Wesley Natzle

    Inventor： Merritt Funk ,  Radha Sundararajan ,  Daniel Prager ,  Wesley Natzle

    IPC: H01L21/66

    CPC classification number: H01L22/12

    Abstract: A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, bi-layer mask data, and BARC layer data. At least one pre-processing prediction map is calculated for the wafer. A pre-processing confidence map is calculated for the wafer. The pre-processing confidence map includes a set of confidence data for the plurality of dies on the wafer. A prioritized measurement site is determined when the confidence data for one or more dies is not within the confidence limits. A new measurement recipe that includes the prioritized measurement site is then created.

    Abstract translation: 提出了一种处理晶片的方法，其包括使用测量的晶片的测量数据创建预处理测量图，包括晶片上的至少一个隔离结构的测量数据，晶片上的至少一个嵌套结构的度量数据，bi 层掩模数据和BARC层数据。 为晶片计算至少一个预处理预测图。 计算晶片的预处理置信图。 预处理置信图包括晶片上的多个管芯的一组置信数据。 当一个或多个管芯的置信度数据不在置信限度内时，确定优先测量点。 然后创建包含优先测量站点的新测量配方。

    Creating a library for measuring a damaged structure formed on a wafer using optical metrology
    89.
    发明申请
    Creating a library for measuring a damaged structure formed on a wafer using optical metrology 失效
    使用光学测量法创建用于测量在晶圆上形成的损坏结构的库

    公开(公告)号：US20070233404A1

    公开(公告)日：2007-10-04

    申请号：US11395636

    申请日：2006-03-30

    Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

    Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

    IPC: G06F19/00 ,  G01N21/00

    CPC classification number: G01N21/95607

    Abstract: A method of creating a library for measuring a plurality of damaged structures formed on a semiconductor wafer using optical metrology includes directing an incident beam on a first damaged structure. The first damaged structure was formed by modifying at least one process parameter in a dual damascene procedure. A diffracted beam is received from the first damaged structure. A measured diffraction signal is obtained based on the received diffracted beam. A first simulated diffraction signal is calculated. The first simulated diffraction signal corresponds to a hypothetical profile of the first damaged structure. The hypothetical profile includes an undamaged dielectric portion and a damaged dielectric portion. The measured diffraction signal is compared to the first simulated diffraction signal. If the measured diffraction signal and the first simulated diffraction signal match within a matching criterion, then the first simulated diffraction signal, the hypothetical profile of the first damaged structure, and an amount of dielectric damage corresponding to the damaged dielectric portion of the hypothetical profile are stored in a library.

    Abstract translation: 使用光学测量法创建用于测量形成在半导体晶片上的多个损坏结构的库的方法包括将入射光束引导到第一损坏结构上。 通过在双镶嵌程序中修改至少一个工艺参数来形成第一个损坏的结构。 从第一损坏结构接收衍射光束。 基于接收的衍射光束获得测量的衍射信号。 计算第一个模拟衍射信号。 第一模拟衍射信号对应于第一损坏结构的假想轮廓。 假想轮廓包括未损坏的电介质部分和损坏的电介质部分。 将测量的衍射信号与第一模拟衍射信号进行比较。 如果测量的衍射信号和第一模拟衍射信号在匹配标准内匹配，则第一模拟衍射信号，第一损坏结构的假想轮廓和对应于假想轮廓损坏的介质部分的介电损伤量是 存储在库中。

    Measuring a damaged structure formed on a wafer using optical metrology
    90.
    发明申请
    Measuring a damaged structure formed on a wafer using optical metrology 有权
    使用光学测量法测量在晶片上形成的损坏结构

    公开(公告)号：US20070229807A1

    公开(公告)日：2007-10-04

    申请号：US11396214

    申请日：2006-03-30

    Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

    Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

    IPC: G01N21/00

    CPC classification number: G01N21/95607 ,  G01N21/4788 ,  G01N21/9501 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.

    Abstract translation: 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。

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