Motor and electronic apparatus using the same
    81.
    发明授权
    Motor and electronic apparatus using the same 失效
    电机和电子设备使用相同

    公开(公告)号:US08159106B2

    公开(公告)日:2012-04-17

    申请号:US12813201

    申请日:2010-06-10

    IPC分类号: H02K1/00

    摘要: A stator 13 on whose outer circumference a plurality of magnetic poles 13a are arranged is mounted on a substrate 11, and a rotor 14 is rotatably disposed around the stator. The inner circumferential face of the rotor is provided with a magnet 15 magnetized to have alternately opposite polarities in a direction opposing the stator, and magnetized to have alternately opposite polarities in a direction opposing the substrate. The outer circumferential ends of the magnetic poles of the stator are provided with a first extended portion 13c that extends from a magnetic pole base 13d to the substrate side, and a second extended portion 13b that extends from the magnetic pole base to a side opposite the substrate side. A face of the substrate opposing the rotor is provided with a FG pattern 19 outside the outer circumferential face of the stator such that the FG pattern opposes the magnet. Accordingly, it is possible to improve the precision in detecting the rotational speed by reducing noise superimposed on the FG signal, while securing a high driving efficiency.

    摘要翻译: 在其外周配置有多个磁极13a的定子13安装在基板11上,并且转子14围绕定子可旋转地设置。 转子的内周面设置有磁体15,磁体15在与定子相对的方向上具有相反的极性,并且在与基板相对的方向上被磁化成具有相反的极性。 定子的磁极的外周端设置有从磁极基部13d延伸到基板侧的第一延伸部13c和从磁极基部延伸到与磁极基部相反的一侧的第二延伸部13b 衬底侧。 与转子相对的基板的表面在定子的外周面的外侧设置有FG图案19,使得FG图案与磁体相对。 因此,在确保高驱动效率的同时,通过降低叠加在FG信号上的噪音来提高检测转速的精度。

    Multi-angle rotation for ion implantation of trenches in superjunction devices
    83.
    发明授权
    Multi-angle rotation for ion implantation of trenches in superjunction devices 有权
    多角度旋转用于离子注入超导结器件中的沟槽

    公开(公告)号:US08114751B2

    公开(公告)日:2012-02-14

    申请号:US12914623

    申请日:2010-10-28

    IPC分类号: H01L21/425

    摘要: A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of a first conductivity at a first implantation direction. The first sidewall of the at least one first trench is implanted with the dopant of the first conductivity at a second implantation direction. The second implantation direction is orthogonal to the first implantation direction. The first and second implantation directions are non-orthogonal to the first sidewall.

    摘要翻译: 一种制造半导体器件的方法包括提供半导体晶片并且在晶片中形成具有第一和第二侧壁的晶片中的至少一个第一沟槽和在晶片上的第一取向。 所述至少一个第一沟槽的第一侧壁在第一注入方向上注入具有第一导电性的掺杂剂。 至少一个第一沟槽的第一侧壁在第二植入方向上注入第一导电性的掺杂剂。 第二注入方向与第一注入方向正交。 第一和第二注入方向与第一侧壁不正交。

    Multi-angle rotation for ion implantation of trenches in superjunction devices
    85.
    发明授权
    Multi-angle rotation for ion implantation of trenches in superjunction devices 有权
    多角度旋转用于离子注入超导结器件中的沟槽

    公开(公告)号:US07846821B2

    公开(公告)日:2010-12-07

    申请号:US12371025

    申请日:2009-02-13

    IPC分类号: H01L21/425

    摘要: A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench is implanted with a dopant of a first conductivity at a first implantation direction. The first sidewall of the at least one first trench is implanted with the dopant of the first conductivity at a second implantation direction. The second implantation direction is orthogonal to the first implantation direction. The first and second implantation directions are non-orthogonal to the first sidewall.

    摘要翻译: 一种制造半导体器件的方法包括提供半导体晶片并且在晶片中形成具有第一和第二侧壁的晶片中的至少一个第一沟槽和在晶片上的第一取向。 所述至少一个第一沟槽的第一侧壁在第一注入方向上注入具有第一导电性的掺杂剂。 至少一个第一沟槽的第一侧壁在第二植入方向上注入第一导电性的掺杂剂。 第二注入方向与第一注入方向正交。 第一和第二注入方向与第一侧壁不正交。

    MOTOR DRIVING DEVICE, MOTOR DEVICE, AND INTEGRATED CIRCUIT DEVICE
    86.
    发明申请
    MOTOR DRIVING DEVICE, MOTOR DEVICE, AND INTEGRATED CIRCUIT DEVICE 失效
    电机驱动装置,电动装置和集成电路装置

    公开(公告)号:US20100171453A1

    公开(公告)日:2010-07-08

    申请号:US12664287

    申请日:2008-04-03

    IPC分类号: H02H7/08

    CPC分类号: H02P23/06 H02P3/18

    摘要: A motor driving device (100) includes an inverter (20), a speed control unit (40), and a regeneration preventing means (50). The inverter (20) converts supplied DC power to driving power for driving a motor (10), and supplies the driving power to the motor (10). The speed control unit (40) generates a speed control signal group based on a speed command signal Sref and a speed detection signal N, and adjusts the driving power based on a drive control signal VSP1 included in the speed control signal group, thereby controlling the speed of the motor (10). The regeneration preventing means (50) determines whether the motor (10) is in a state possibly causing regenerative phenomena or in a state not causing regenerative phenomena based on the speed command information included in the speed command signal Sref and the speed detection information included in the speed detection signal N, and performs a regeneration reduction process to reduce regenerative phenomena according to the determination result, thereby preventing regenerative phenomena.

    摘要翻译: 电动机驱动装置(100)包括逆变器(20),速度控制单元(40)和再生防止装置(50)。 逆变器(20)将提供的直流电力转换为用于驱动电动机(10)的驱动电力,并将驱动电力提供给电动机(10)。 速度控制单元40基于速度指令信号Sref和速度检测信号N生成速度控制信号组,并根据包括在速度控制信号组中的驱动控制信号VSP1来调节驱动功率,从而控制 马达(10)的速度。 再生防止装置(50)基于包括在速度指令信号Sref中的速度指令信息和包含在速度指令信号Sref中的速度检测信息,判定电动机(10)是否处于可能引起再生现象的状态或不引起再生现象的状态 速度检测信号N,并且执行再生还原处理以根据确定结果减少再生现象,由此防止再生现象。