公开(公告)号：US06261361B1

公开(公告)日：2001-07-17

申请号：US09577252

申请日：2000-05-19

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/203 ,  Y10S117/917

摘要： There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient(° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.

摘要翻译： 公开了一种用于制造硅单晶晶片的方法，其中在缺陷分布图中，根据CZ方法在N区域中掺杂氮，生长硅单晶，其示出了水平轴表示的缺陷分布 距离晶体中心的径向距离D（mm）和纵轴表示F / G（mm2 /℃·min）的值，其中F是单晶的拉伸速率（mm / min），以及 G是在硅的熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（℃/ mm）。可以提供一种制造硅单晶晶片的方法，该硅单晶晶片由 通过CZ法在可以容易地在大范围，高收率，高生产率下容易地控制的条件下，通过CZ法在晶体的整个表面中不存在富V区和富I区的N区。

公开(公告)号：US06197108B1

公开(公告)日：2001-03-06

申请号：US09211679

申请日：1998-12-14

申请人： Eiichi Iino ,  Masanori Kimura

发明人： Eiichi Iino ,  Masanori Kimura

IPC分类号： C30B1520

CPC分类号： C30B15/36 ,  C30B15/00 ,  C30B29/06 ,  C30B29/36 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1072

摘要： In a method of manufacturing a silicon monocrystalline ingot using the Czochralski (CZ) method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof, and the maximum apex angle is not less than 3° but not greater than 28°. In this case, a monocrystal having an etched tip end portion or a monocrystalline ingot manufactured in accordance with the CZ method and having a tail portion is used as the seed crystal. Further, there may be used a silicon seed crystal having a tapered tip end portion of a conical or pyramidal shape, a straight body portion of a cylindrical columnar or rectangular columnar shape, and an intermediate portion located between the tip end portion and the straight body portion and having a truncated conical or pyramidal shape formed by a curved outer surface. A silicon monocrystalline ingot having a desired diameter is grown through use of such a seed crystal without performance of necking.

摘要翻译： 在使用Czochralski（CZ）方法制造硅单晶锭的方法中，使用尖端具有尖锐形状或截头的晶种，并且最大顶角不小于3°而不是 大于28°。 在这种情况下，使用具有根据CZ方法制造且具有尾部的蚀刻的尖端部分或单晶锭的单晶作为晶种。 此外，可以使用具有锥形或锥体形状的锥形尖端部分，圆柱形或矩形柱状的直体部分和位于尖端部分和直体之间的中间部分的硅晶种 并且具有由弯曲的外表面形成的截头圆锥形或棱锥形。 具有期望直径的硅单晶锭通过使用这种晶种生长而不进行颈缩。

公开(公告)号：US6120749A

公开(公告)日：2000-09-19

申请号：US101941

申请日：1998-07-17

申请人： Kiyotaka Takano ,  Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Kiyotaka Takano ,  Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B15/22 ,  C30B15/00 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  C31B33/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10S257/913

摘要： A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. This wafer has no crystal defects with regard to the dielectric breakdown strength of oxide film in its peripheral region which extends from the circumference and accounts for up to 50% of the total area, in particular which extends from the circumference to a circle 30 mm apart from the circumference. A process for producing a silicon single crystal for easily producing, by the Czochralski method, a silicon single-crystal wafer improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof without considerably lowering the production efficiency is provided. In this process, the silicon single crystal which is being grown by the Czochralski method is pulled at a rate which is 80 to 60% of the critical pull rate inherent in the pulling apparatus.

摘要翻译： PCT No.PCT / JP97 / 00090 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年1月17日PCT PCT。 WO97 / 26393 PCT出版物 日期1997年7月24日提供直径为6英寸或更大并且提高了氧化膜的绝缘击穿强度的硅单晶晶片，特别是其周边部分，从而提高了每片晶片产生的器件芯片的产量。 该晶片在其周边区域中的氧化膜的介电击穿强度方面没有晶体缺陷，其从圆周延伸并占总面积的50％，特别是从圆周延伸到相隔30mm的圆 从圆周。 提供了一种用于通过切克劳斯斯克方法生产硅单晶的方法，其提供了特别在其周边部分提高氧化膜的介电击穿强度的硅单晶晶片，而不会显着降低生产效率。 在这个过程中，以切克劳斯基法生长的硅单晶以牵引装置固有的临界拉伸速率的80％至60％的速率被拉伸。

公开(公告)号：US6113686A

公开(公告)日：2000-09-05

申请号：US945209

申请日：1998-02-03

申请人： Eiichi Iino ,  Yasushi Nakamura ,  Seiichiro Otsuka ,  Koji Midzuishi ,  Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Eiichi Iino ,  Yasushi Nakamura ,  Seiichiro Otsuka ,  Koji Midzuishi ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B15/20 ,  C30B15/22 ,  C30B15/30 ,  C30B29/06 ,  C30B15/00

CPC分类号： C30B15/30 ,  C30B15/22 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1032

摘要： A method and apparatus for growing and manufacturing a single crystal according to a so-called Czochralski (CZ) method. A seed crystal 12 is connected to a tip end of a wire 41a as a hanging member 41 to pull and form a single crystal part 15, arm-shaped members 44a of a lifting jig 44 are engaged in a recess 16 of a corrugated portion 14 formed on the single crystal part 15 during the pulling operation, the pulling speeds of both of the arm-shaped members 44a and wire 41a are synchronously controlled to provide smooth transfer between the arm-shaped members 44a and wire 41a, whereby the single crystal part 15 is pulled always at a constant pulling speed. In particular, a heavy-weight single crystal can be safely pulled and formed without any dislocation therein while minimizing an impact force applied to the crystal.

摘要翻译： PCT No.PCT / JP96 / 01089 Sec。 371日期1998年2月3日 102（e）1998年2月3日PCT 1996年4月22日PCT PCT。 公开号WO96 / 33301 日期：1996年10月24日根据所谓的Czochralski（CZ）方法生长和制造单晶的方法和装置。 将晶种12连接到线41a的顶端作为悬挂构件41拉动并形成单晶部分15，提升夹具44的臂状构件44a接合在波纹状部分14的凹部16中 在牵引操作期间在单晶部分15上形成的两个臂状部件44a和线41a的牵引速度被同步地控制，以在臂状部件44a和线41a之间平滑地传递，由此单晶部分 15总是以恒定的拉速拉。 特别地，可以安全地拉和形成重量级的单晶而没有任何位错，同时最小化施加到晶体的冲击力。

公开(公告)号：US6066306A

公开(公告)日：2000-05-23

申请号：US188490

申请日：1998-11-09

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  C01B33/26

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree.C.multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree.C/mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma , or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

摘要翻译： 在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×Min，其中F为拉 速率（mm / min），G是在硅熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（℃/ mm）。另外，单 拉伸晶体使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区域所需的时间被控制为140分钟以下。 该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。

公开(公告)号：US5964941A

公开(公告)日：1999-10-12

申请号：US929670

申请日：1997-09-15

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/30 ,  C30B29/06

CPC分类号： C30B15/30 ,  Y10S117/911 ,  Y10T117/1032

摘要： A method and an apparatus for pulling a single crystal are disclosed. A neck portion, a corrugated portion, and a single crystal are formed below a seed crystal held by a seed chuck. When the corrugated portion is raised to a predetermined position (where lifting jig can hold the corrugated portion) by the seed chuck, the rising speed Va of the seed chuck is reduced, and a slider that supports a seed chuck lifting mechanism is raised at a speed Vb in order to maintain a constant pulling speed of the single crystal. Eventually, the pulling by the seed chuck is switched to the pulling by the slider. Subsequently, the lifting jig provided on the slider is raised slightly by a moving mechanism so that the crystal holding portions of the lifting jig are brought into contact with the corrugated portion and 1-50% of the weight of the crystal is shifted to the lifting jig. This enables safe and accurate growth of a heavy single crystal in accordance with, for example, the CZ method.

摘要翻译： 公开了一种拉制单晶的方法和装置。 在由种子卡盘保持的晶种的下方形成颈部，波纹状部分和单晶。 当波纹部分通过种子卡盘升高到预定位置（其中提升夹具可以保持波纹部分）时，种子卡盘的上升速度Va降低，并且支撑种子卡盘提升机构的滑块在 速度Vb以保持单晶的恒定牵引速度。 最终，种子卡盘的拉动被切换到由滑块拉动。 随后，设置在滑块上的提升夹具通过移动机构稍微升高，使得提升夹具的晶体保持部分与波纹部分接触，并且晶体重量的1-50％转移到提升 夹具 这使得可以根据例如CZ方法安全且准确地生长重单晶。

公开(公告)号：US5911822A

公开(公告)日：1999-06-15

申请号：US7614

申请日：1998-01-15

申请人： Takao Abe ,  Masanori Kimura

发明人： Takao Abe ,  Masanori Kimura

IPC分类号： C30B15/00 ,  C30B15/36 ,  C30B29/06 ,  H01L21/208 ,  C30B15/32

CPC分类号： C30B29/06 ,  C30B15/36 ,  Y10S117/911

摘要： In a method of manufacturing a silicon monocrystal using the Czochralski method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the size of the tip portion increases to a desired value. Subsequently, the seed crystal is slowly pulled upwardly in order to grow a silicon monocrystalline ingot having a desired diameter without performing necking operation. This method enables a heavy silicon monocrystal to be pulled quite simply without performance of necking operation, while eliminating the necessity of using a complicated apparatus such as a crystal holding mechanism.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，使用尖端具有尖锐形状或截短的晶种。 晶种的尖端与硅熔体轻轻地接触，然后以低速将晶种降低，以熔化晶种的末端部分，直到尖端部分的尺寸增加到 所需值。 随后，将晶种向上缓慢地向上拉，以便生长具有期望直径的硅单晶锭，而不进行颈缩操作。 这种方法使得重硅单晶可以非常简单地拉伸而不进行颈缩操作，而不需要使用诸如晶体保持机构的复杂装置。

公开(公告)号：US5902508A

公开(公告)日：1999-05-11

申请号：US815902

申请日：1997-03-12

申请人： Masanori Kimura ,  Naosato Yoshida

发明人： Masanori Kimura ,  Naosato Yoshida

IPC分类号： H05B6/32 ,  H05B6/30 ,  H05B6/36 ,  H05B6/40

CPC分类号： H05B6/365 ,  H05B6/30

摘要： An induction heating coil used in a floating zone melting method, characterized in that the path of a high-frequency current is controllable in the body surface of the coil and by the use of the coil a more uniform resistivity profile across a diameter is achieved as compared with those from the prior art. In the coil a second metal or alloy different in electric conductivity from a first metal or alloy of the coil is disposed in a predetermined place(s) to control the path of a high-frequency current, wherein the second metal or alloy has, for example, higher electric conductivity than the first metal or alloy and a long narrow and thin strip made of the second metal or alloy is disposed in such a manner that it meanders on the body surface of the coil between the outer and inner peripheries periodically.

摘要翻译： 一种用于浮动区熔化方法的感应加热线圈，其特征在于，高频电流的路径在线圈的体表中是可控的，并且通过使用线圈，跨越直径的更均匀的电阻率曲线被实现为 与现有技术相比。 在线圈中，与预定的位置配置与第一金属或合金不同的第二金属或合金，以控制高频电流的路径，其中第二金属或合金具有用于 例如，比第一金属或合金更高的电导率和由第二金属或合金制成的长的窄条和细条被设置成使得其周期性地在外周和内周之间蜿蜒在线圈的体表面上。

公开(公告)号：US5792255A

公开(公告)日：1998-08-11

申请号：US655201

申请日：1996-05-30

申请人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  C30B15/22

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1068

摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.

摘要翻译： 在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出 熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。 通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是 通过中心部分Cm或者低于该部分。 与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

公开(公告)号：US5688321A

公开(公告)日：1997-11-18

申请号：US636348

申请日：1996-04-23

申请人： Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B13/30 ,  C30B13/00 ,  C30B13/26 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B29/06 ,  C30B13/26 ,  Y10T117/10 ,  Y10T117/1016

摘要： A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described. The growing single crystal ingot is post-heated by a heat reflector near the molten zone.

摘要翻译： 一种通过浮区法制造单晶硅的方法，包括以下步骤：提供平均晶粒长度为10-1000μm的多晶硅棒; 加热多晶硅棒的一部分以形成熔融区，同时向熔融区施加300至1000高斯的磁场; 并且使熔融区域通过多晶硅棒的长度，从而通过浮动区域方法的一次通过区域将多晶硅棒转变成硅单晶锭。 还描述了一种用于将方法减少到实践中的装置。 生长中的单晶锭通过靠近熔融区的热反射器进行后加热。