公开(公告)号：US06522680B1

公开(公告)日：2003-02-18

申请号：US09819024

申请日：2000-11-03

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01S5183

CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/18333 ,  H01S5/18358 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3211 ,  H01S5/3432

摘要： An active region of a VCSEL at one (i.e., n doped) end having an expanded effectively undoped region, and another (i.e., p doped) end having a significantly doped region up to or even including a portion of the active region. A previous way had heavy doping of the n and p doped regions up to the active region, at least close to it or even partially into it.

公开(公告)号：US6064683A

公开(公告)日：2000-05-16

申请号：US989734

申请日：1997-12-12

申请人： Ralph H. Johnson

发明人： Ralph H. Johnson

IPC分类号： H01L33/10 ,  H01L33/14 ,  H01L33/46 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S3/19

CPC分类号： H01S5/18341 ,  H01S5/18308 ,  H01S5/1833 ,  H01L33/105 ,  H01L33/145 ,  H01L33/465 ,  H01S2301/173 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3086

摘要： A light emitting device having a first mirror, an active layer, a second mirror, and a beryllium implantation resulting in a peripheral boundary of a waveguide through the first and second mirrors, the active layer and the trapping layer. A P-N junction is situated within the implantation and the guide. The turn on voltage is lower for the junction within the waveguide than that within the implantation, resulting in confinement of current within the guide at a voltage applied to the device that is greater than the lower junction voltage and less than the higher junction voltage. The device also has an electron trapping layer between said first mirror and said active layer, and a conduction layer situated on said second mirror.

摘要翻译： 一种具有第一反射镜，有源层，第二反射镜和铍注入的发光器件，其通过第一和第二反射镜，有源层和捕获层导致波导的外围边界。 P-N结位于植入和引导下。 波导内的接合点的接通电压比注入内的接通电压低，从而导致电流在引导器内被施加到器件上的电压的限制，该电压大于较低的结电压且小于较高的结电压。 该器件还在所述第一反射镜和所述有源层之间具有电子俘获层，以及位于所述第二反射镜上的导电层。

公开(公告)号：US5481123A

公开(公告)日：1996-01-02

申请号：US359804

申请日：1994-12-20

申请人： Ralph H. Johnson ,  Edward W. Mehal

发明人： Ralph H. Johnson ,  Edward W. Mehal

IPC分类号： H01L33/30 ,  H01L33/00

CPC分类号： H01L33/305

摘要： A group III-V substrate is doped with tellurium or another group VI element, instead of silicon, in order to avoid the conductivity type conversion that could otherwise occur if the group V element is boiled off during high temperature processing. For example, a gallium arsenide substrate can be doped with tellurium and then a gallium arsenide epitaxial layer can be deposited on a surface. If the substrate is heated beyond a predetermined temperature during the processing of the device, the arsenic can boil away from the substrate and leave arsenic vacancies. If the silicon is used as the substrate dopant, the silicon can migrate to the arsenic vacancies and replace arsenic, particularly proximate the substrate surface. If, on the other hand, tellurium or another group VI element is used as the substrate dopant, this change in conductivity type can not occur. Therefore, the conductivity conversion proximate the substrate surface will not create a thyristor-like behavior that is significantly disadvantageous.

摘要翻译： III-V族基体掺杂有碲或另一种VI族元素而不是硅，以避免在高温处理期间V族元素沸腾时可能发生的导电类型转化。 例如，可以用碲掺杂砷化镓衬底，然后在表面上沉积砷化镓外延层。 如果在器件加工过程中将衬底加热到​​预定温度以上，则砷可以从衬底上沸腾并留下砷空位。 如果将硅用作衬底掺杂剂，则硅可以迁移到砷空位并且替换砷，特别是靠近衬底表面。 另一方面，如果使用碲或另一组VI元素作为底物掺杂剂，则不能发生导电类型的变化。 因此，靠近衬底表面的电导率转换将不会产生明显不利的类晶闸管样行为。