公开(公告)号：US11462682B2

公开(公告)日：2022-10-04

申请号：US17249105

申请日：2021-02-19

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Thomas Jon Peterson ,  Anthony William Hurben ,  Delin Zhang

IPC: G11C11/00 ,  H01L43/10 ,  G11C11/16 ,  G06N3/04 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic device may include a layer stack including a work function structure, a dielectric layer, and a ferromagnetic layer, where the ferromagnetic layer is positioned between the work function structure and the dielectric layer. The work function structure is configured to deplete electrons from the ferromagnetic layer or accumulate electrons in the ferromagnetic layer. A magnetization orientation of the ferromagnetic layer is configured to be switched by a voltage applied across the layer stack or by a voltage applied across or through the work function structure.

公开(公告)号：US11328757B2

公开(公告)日：2022-05-10

申请号：US17078764

申请日：2020-10-23

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Protyush Sahu

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22

Abstract: In some examples, a device includes a dielectric material, a ferromagnetic material, and a topological material positioned between the dielectric material and the ferromagnetic material. The device is configured to trap electric charge inside the dielectric material or at an interface of the dielectric material and the topological material. The device is configured to switch a magnetization state of the ferromagnetic material based on a current through the topological material or based on a voltage in the topological material.

公开(公告)号：US11302472B2

公开(公告)日：2022-04-12

申请号：US15546407

申请日：2015-07-22

Applicant: REGENTS OF THE UNIVERSITY OF MINNESOTA

Inventor： Jian-Ping Wang ,  Yanfeng Jiang

IPC: H01F41/02 ,  H01F1/047 ,  H01F1/08 ,  B22D27/02 ,  C22C38/00 ,  H01F1/06 ,  H02K1/02

Abstract: Techniques are disclosed concerning applied magnetic field synthesis and processing of iron nitride magnetic materials. Some methods concern casting a material including iron in the presence of an applied magnetic field to form a workpiece including at least one ironbased phase domain including uniaxial magnetic anisotropy, wherein the applied magnetic field has a strength of at least about 0.01 Tesla (T). Also disclosed are workpieces made by such methods, apparatus for making such workpieces and bulk materials made by such methods.

公开(公告)号：US20210123126A1

公开(公告)日：2021-04-29

申请号：US16949038

申请日：2020-10-09

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Bin Ma ,  Guannan Guo

IPC: C23C8/34 ,  B22D23/00 ,  C23C8/80 ,  C22C38/00 ,  H01F1/147

Abstract: The disclosure describes a method that includes forming a soft magnetic material by a technique including melt spinning. The soft magnetic material includes at least one of: at least one of an α″-Fe16(NxZ1-x)2 phase domain or an α′-Fe8(NxZ1-x), where Z includes at least one of C, B, or O, and where x is a number greater than zero and less than one; or at least one of an α″-Fe16N2 phase domain or an α′-Fe8N phase domain, and at least one of an α″-Fe16Z2 phase domain or an α′-Fe8Z phase domain.

公开(公告)号：US10854257B2

公开(公告)日：2020-12-01

申请号：US16782845

申请日：2020-02-05

Applicant: Regents of the University of Minnesota ,  Carnegie Mellon University

Inventor： Jian-Ping Wang ,  Delin Zhang ,  Sara A. Majetich ,  Mukund Bapna

IPC: H01L43/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  B82Y25/00 ,  H01L27/22

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

公开(公告)号：US10692635B2

公开(公告)日：2020-06-23

申请号：US15622785

申请日：2017-06-14

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Yanfeng Jiang

IPC: H01F1/10 ,  B22D11/00 ,  H01F41/02 ,  H01F1/08 ,  C22C38/00 ,  B22F7/08 ,  C23C8/26 ,  C23C8/80 ,  C23C14/48 ,  C22C29/16 ,  B22D11/06 ,  H01F1/055 ,  H01F1/147 ,  H01F1/34 ,  H01F1/057

Abstract: A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

公开(公告)号：US10573439B2

公开(公告)日：2020-02-25

申请号：US15501697

申请日：2015-08-05

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Yanfeng Jiang

IPC: H01F1/059 ,  H01F41/22 ,  C23C16/34 ,  C23C16/56 ,  H02K1/02

Abstract: The disclosure describes multilayer hard magnetic materials including at least one layer including α″-Fe16N2 and at least one layer including α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16N2 and α″-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. The disclosure also describes techniques for forming multilayer hard magnetic materials including at least one layer including α″-Fe16N2 and at least one layer including α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16N2 and α″-Fe16Z2 using chemical vapor deposition or liquid phase epitaxy.

公开(公告)号：US10358716B2

公开(公告)日：2019-07-23

申请号：US15501670

申请日：2015-08-05

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Yanfeng Jiang

IPC: C23C16/34 ,  C23C16/56 ,  C23C16/448 ,  C23C16/50

Abstract: A hard magnetic material includes α″ Fe16N2. In some examples, the hard magnetic material may be formed by a technique utilizing chemical vapor deposition or liquid phase epitaxy.

公开(公告)号：US10302711B2

公开(公告)日：2019-05-28

申请号：US15918942

申请日：2018-03-12

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Angeline Klemm Smith ,  Mahdi Jamali ,  Zhengyang Zhao

IPC: G01R33/07 ,  G01R33/12 ,  H01L43/04 ,  H01L43/06

Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.

公开(公告)号：US20180294078A1

公开(公告)日：2018-10-11

申请号：US16003428

申请日：2018-06-08

Applicant: Regents of the University Of Minnesota

Inventor： Jian-Ping Wang ,  Shihai He ,  Yanfeng Jiang

IPC: H01F1/01 ,  H01F41/02 ,  H01F7/02 ,  B22D11/06 ,  B32B15/01 ,  H01F1/047 ,  C22C38/00 ,  C23C8/80 ,  C23C8/26 ,  C21D1/76

Abstract: A permanent magnet may include a Fe16N2 phase constitution. In some examples, the permanent magnet may be formed by a technique that includes straining an iron wire or sheet comprising at least one iron crystal in a direction substantially parallel to a crystal axis of the iron crystal; nitridizing the iron wire or sheet to form a nitridized iron wire or sheet; annealing the nitridized iron wire or sheet to form a Fe16N2 phase constitution in at least a portion of the nitridized iron wire or sheet; and pressing the nitridized iron wires and sheets to form bulk permanent magnet