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公开(公告)号：US10217522B2
公开(公告)日：2019-02-26
申请号：US15600958
申请日：2017-05-22
发明人： Jian-Ping Wang , Mahdi Jamali , Sachin S. Sapatnekar , Meghna G. Mankalale , Zhaoxin Liang , Angeline Klemm Smith , Mahendra DC , Hyung-il Kim , Zhengyang Zhao
IPC分类号： G11C19/08 , G11C19/00 , G11C11/22 , G11C11/16 , H01L43/08 , G11C11/18 , B82Y10/00 , H01L29/66 , H01L27/11521 , H01L29/06 , H01L27/118
摘要： In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.
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公开(公告)号：US20180203077A1
公开(公告)日：2018-07-19
申请号：US15918942
申请日：2018-03-12
CPC分类号： G01R33/075 , G01R33/077 , G01R33/1284
摘要： An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.
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公开(公告)号：US20170082697A1
公开(公告)日：2017-03-23
申请号：US14946069
申请日：2015-11-19
IPC分类号： G01R33/07
CPC分类号： G01R33/075 , G01R33/077 , G01R33/1284 , H01L43/04 , H01L43/06
摘要： An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.
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公开(公告)号：US10302711B2
公开(公告)日：2019-05-28
申请号：US15918942
申请日：2018-03-12
摘要： An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.
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公开(公告)号：US20170337983A1
公开(公告)日：2017-11-23
申请号：US15600958
申请日：2017-05-22
发明人： Jian-Ping Wang , Mahdi Jamali , Sachin S. Sapatnekar , Meghna G. Mankalale , Zhaoxin Liang , Angeline Klemm Smith , Mahendra DC , Hyung-il Kim , Zhengyang Zhao
IPC分类号： G11C19/08 , H01L43/08 , H01L27/11502 , G11C11/15 , G11C11/22 , G11C11/16 , G11C11/24 , G11C19/00 , H01L27/118
CPC分类号： G11C19/0841 , B82Y10/00 , G11C11/161 , G11C11/1675 , G11C11/18 , G11C11/221 , G11C19/005 , H01L27/11521 , H01L29/0692 , H01L29/66984 , H01L43/08 , H01L2027/11824
摘要： In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an output FE capacitor, and a channel positioned beneath the input FE capacitor and positioned beneath the output FE capacitor. In some examples, the channel is configured to carry a magnetic signal from the input FE capacitor to the output FE capacitor to cause a voltage change at the output FE capacitor. In some examples, the electronic device further comprises a transistor-based drive circuit electrically connected to an output node of the output FE capacitor. In some examples, the transistor-based drive circuit is configured to deliver, based on the voltage change at the output FE capacitor, an output signal to an input node of a second device.
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公开(公告)号：US11176979B2
公开(公告)日：2021-11-16
申请号：US16803454
申请日：2020-02-27
发明人： Jian-Ping Wang , Sachin S. Sapatnekar , Ulya R. Karpuzcu , Zhengyang Zhao , Masoud Zabihi , Michael Salonik Resch , Zamshed I. Chowdhury , Thomas Peterson
摘要： A logic-memory cell includes a spin-orbit torque device having first, second and third terminals configured such that current between the second and third terminals is capable of changing a resistance between the first and second terminals. In the cell, a first transistor is connected between a logic connection line and the first terminal of the spin-orbit torque device and a second transistor is connected between the logic connection line and the third terminal of the spin-orbit torque device.
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公开(公告)号：US20200279597A1
公开(公告)日：2020-09-03
申请号：US16803454
申请日：2020-02-27
发明人： Jian-Ping Wang , Sachin S. Sapatnekar , Ulya R. Karpuzcu , Zhengyang Zhao , Masoud Zabihi , Michael Salonik Resch , Zamshed I. Chowdhury , Thomas Peterson
IPC分类号： G11C11/16
摘要： A logic-memory cell includes a spin-orbit torque device having first, second and third terminals configured such that current between the second and third terminals is capable of changing a resistance between the first and second terminals. In the cell, a first transistor is connected between a logic connection line and the first terminal of the spin-orbit torque device and a second transistor is connected between the logic connection line and the third terminal of the spin-orbit torque device.
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