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公开(公告)号：US20050031988A1
公开(公告)日：2005-02-10
申请号：US10910308
申请日：2004-08-04
IPC分类号： C08F220/18 , G03C1/76 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397
摘要： A polymer comprising recurring units of formulae (1), (2) and (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane structure, represented by any of formulae (X-1) to (X-4): wherein R6 is a C1-C10 alkyl group. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized line edge roughness and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译： 包含式（1），（2）和（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3和R 4是H或OH，X是具有双环[2.2.1] 庚烷结构，由式（X-1）至（X-4）中的任一个表示：其中R 6是C 1 -C 10烷基。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的线边缘粗糙度，并且借助于电子束或深紫外线用于VLSI制造的微图案化。
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公开(公告)号：US08921025B2
公开(公告)日：2014-12-30
申请号：US12793284
申请日：2010-06-03
申请人： Tatsushi Kaneko , Koji Hasegawa , Tsunehiro Nishi
发明人： Tatsushi Kaneko , Koji Hasegawa , Tsunehiro Nishi
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. Resin component (A) is a polymer comprising recurring units of formula (1) wherein R1 is H, CH2 or CF3, R2 is an acid labile group, R3 is H or CO2CH3, X is O, S, CH2 or CH2CH2, 0.01≦a
摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂组分（A）是包含式（1）的重复单元的聚合物，其中R 1是H，CH 2或CF 3，R 2是酸不稳定基团，R 3是H或CO 2 CH 3，X是O，S，CH 2或CH 2 CH 2，0.01＆ ; a <1和0.01＆nlE; b <1。 当通过ArF光刻处理时，组合物形成具有令人满意的掩模保真度和最小LWR的图案。
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公开(公告)号：US07718342B2
公开(公告)日：2010-05-18
申请号：US11645751
申请日：2006-12-27
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译： 提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％ （2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9和R 11为H或CH 3，Y为亚甲基或O，当Y为亚甲基时，R 2为CO 2 R 10，当Y为O时，R 2为H或CO 2 R 10，R 10为C 1 -C 15烷基 由O分隔，R 5和R 6是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。 包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。
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公开(公告)号：US20070148594A1
公开(公告)日：2007-06-28
申请号：US11645751
申请日：2006-12-27
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译： 提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％ （2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9， 和R 11是H或CH 3，Y是亚甲基或O，R 2是CO 2 R 2， 当Y为O时，当Y为亚甲基且R 2为H或CO 2 R 10时，SUP> 10 > 10是C 1 -C 15烷基，其可以被O，R 5和R 6分开， / SUP>是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。 包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。
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公开(公告)号：US20050282083A1
公开(公告)日：2005-12-22
申请号：US11155837
申请日：2005-06-20
申请人： Kenji Funatsu , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： C08F220/26 , G03C1/492 , G03F7/039
CPC分类号： G03F7/0397 , C08F220/26
摘要： A polymer comprising recurring units having formulae (1) and (2) and having a weight average molecular weight of 1,000 to 50,000. In the formulae, R1 and R3 are H or CH3, R4 is alkylene, R2 is a lactone structure-containing substituent group selected from formulae (R2-1) to (R2-4) wherein Y is CH2 or O, R5 is CO2R7 when Y is CH2, or R5 is H or CO2R7 when Y is O, R6 is H or alkyl, and R7 is alkyl which may be separated by at least one oxygen atom. The polymer is used as a base resin to formulate a resist composition, especially a chemically amplified positive resist composition which has a high sensitivity, resolution and dry etch resistance and forms a resist pattern having good substrate adhesion and least roughened sidewalls.
摘要翻译： 一种包含具有式（1）和（2）并且重均分子量为1,000至50,000的重复单元的聚合物。 在式中，R 1和R 3是H或CH 3，R 4是亚烷基， SUP> 2 是含有内酯结构的取代基，其选自式（R 2-2-2）至（R 2-2），其中Y是CH 当Y是CH 2时，R 2是O，R 5是CO 2 R 7， 当Y为O时，R 5为H或CO 2 R 7，R 6为H或烷基 R 7是可被至少一个氧原子分离的烷基。 该聚合物用作基础树脂以配制抗蚀剂组合物，特别是具有高灵敏度，分辨率和耐干蚀刻性的化学放大的正性抗蚀剂组合物，并形成具有良好的底物粘附性和最小粗糙化侧壁的抗蚀剂图案。
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公开(公告)号：US06677101B2
公开(公告)日：2004-01-13
申请号：US10050478
申请日：2002-01-16
申请人： Tsunehiro Nishi , Koji Hasegawa , Mutsuo Nakashima
发明人： Tsunehiro Nishi , Koji Hasegawa , Mutsuo Nakashima
IPC分类号： G03F7039
CPC分类号： C08G61/06 , G03F7/0395 , G03F7/0397
摘要： An object of the present invention is to provide a polymer which has excellent reactivity, rigidity and adhesion to the substrate, and undergoes a low degree of swelling during development, a resist material which uses this polymer as the base resin and hence exhibits much higher resolving power and etching resistance than conventional resist materials, and a pattern formation method using this resist material. Specifically, the present invention provides a novel polymer containing repeating units represented by the following general formula (1-1) or (1-2) and having a weight-average molecular weight of 1,000 to 500,000, a resist material using the polymer as a base resin, and a pattern formation method using the resist material.
摘要翻译： 本发明的目的是提供一种聚合物，其具有优异的反应性，刚性和对基材的粘合性，并且在显影期间发生低度膨胀，使用该聚合物作为基础树脂的抗蚀剂材料，因此表现出更高的分辨率 功率和耐蚀刻性，以及使用该抗蚀剂材料的图案形成方法。 具体地说，本发明提供一种含有下述通式（1-1）或（1-2）表示的重均单元，重均分子量为1000〜500,000的新型聚合物，使用该聚合物作为 基树脂和使用抗蚀剂材料的图案形成方法。
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公开(公告)号：US07727704B2
公开(公告)日：2010-06-01
申请号：US11773706
申请日：2007-07-05
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R2和R3是烷基，R4是一价烃基，X1是O，S或CH2CH2，X2是O，S，CH2或CH2CH2，n是1或2，a1，a2，c，d1和d2 各自为0至小于1，b为0.01至小于1，a1 + a2 + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。
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公开(公告)号：US07691561B2
公开(公告)日：2010-04-06
申请号：US11773656
申请日：2007-07-05
CPC分类号： G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H， 甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X 1是O，S或CH 2 CH 2，X 2是O，S，CH 2或CH 2 CH 2，n是1或2，a和b各自为0.01至少 1，c，d1和d2各自为0至小于1，a + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。
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公开(公告)号：US20080124653A1
公开(公告)日：2008-05-29
申请号：US11987333
申请日：2007-11-29
申请人： Akihiro Seki , Shigeo Tanaka , Katsuya Takemura , Tsunehiro Nishi
发明人： Akihiro Seki , Shigeo Tanaka , Katsuya Takemura , Tsunehiro Nishi
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041 , Y10S430/111
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the composition is improved in resolution and forms a pattern with a minimal line edge roughness.
摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含特定重复单元的聚合物。 当通过ArF光刻处理时，组合物的分辨率提高，并形成具有最小线边缘粗糙度的图案。
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90.发明授权公开(公告)号：US07090961B2
公开(公告)日：2006-08-15
申请号：US10424269
申请日：2003-04-28
IPC分类号： G03F7/004 , G03F7/039 , C07D327/06
CPC分类号： G03F7/0045 , C07D327/06 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.
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