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公开(公告)号：US20050031988A1
公开(公告)日：2005-02-10
申请号：US10910308
申请日：2004-08-04
IPC分类号： C08F220/18 , G03C1/76 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397
摘要： A polymer comprising recurring units of formulae (1), (2) and (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane structure, represented by any of formulae (X-1) to (X-4): wherein R6 is a C1-C10 alkyl group. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized line edge roughness and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译： 包含式（1），（2）和（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3和R 4是H或OH，X是具有双环[2.2.1] 庚烷结构，由式（X-1）至（X-4）中的任一个表示：其中R 6是C 1 -C 10烷基。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的线边缘粗糙度，并且借助于电子束或深紫外线用于VLSI制造的微图案化。
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公开(公告)号：US07666571B2
公开(公告)日：2010-02-23
申请号：US11589109
申请日：2006-10-30
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397
摘要： A polymer of which dissolution rate in an alkaline developer increases under the action of acid comprises recurring units having formulae (1) and (2) wherein R1, R2, and R4 are H or methyl, R3 is difluoromethyl or trifluoromethyl, and X is tertiary alkyl. A resist composition comprising the polymer has a high sensitivity and resolution, decreased pattern collapse during development, and minimized MEF and is best suited as micropatterning material for the VLSI manufacture.
摘要翻译： 在酸性作用下，碱性显影剂溶解速率增加的聚合物包含具有式（1）和（2）的重复单元，其中R 1，R 2和R 4为H或甲基，R 3为二氟甲基或三氟甲基，X为叔 烷基。 包含聚合物的抗蚀剂组合物具有高灵敏度和分辨率，在显影期间减少的图案塌陷，并使MEF最小化，并且最适合作为用于VLSI制造的微图案化材料。
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公开(公告)号：US20070099114A1
公开(公告)日：2007-05-03
申请号：US11589109
申请日：2006-10-30
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397
摘要： A polymer of which dissolution rate in an alkaline developer increases under the action of acid comprises recurring units having formulae (1) and (2) wherein R1, R2, and R4 are H or methyl, R3 is difluoromethyl or trifluoromethyl, and X is tertiary alkyl. A resist composition comprising the polymer has a high sensitivity and resolution, decreased pattern collapse during development, and minimized MEF and is best suited as micropatterning material for the VLSI manufacture.
摘要翻译： 在酸性作用下，碱性显影剂中溶解速率增加的聚合物包括具有式（1）和（2）的重复单元，其中R 1，R 2，和 R 4是H或甲基，R 3是二氟甲基或三氟甲基，X是叔烷基。 包含聚合物的抗蚀剂组合物具有高灵敏度和分辨率，在显影期间减少的图案塌陷，并使MEF最小化，并且最适合作为用于VLSI制造的微图案化材料。
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公开(公告)号：US08192921B2
公开(公告)日：2012-06-05
申请号：US12686836
申请日：2010-01-13
CPC分类号： G03F7/0397 , G03F1/26 , G03F7/0046 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.
摘要翻译： 通过将包含含有酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于通过相的高能量辐射而形成图案 具有晶格状移位器阵列PEB，显影以形成阳性图案，照亮或加热阳性图案以消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，和 将阳性图案溶解在碱性湿蚀刻剂中，以通过正/负反转形成图案。
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公开(公告)号：US07537880B2
公开(公告)日：2009-05-26
申请号：US11905763
申请日：2007-10-03
申请人： Yuji Harada , Jun Hatakeyama , Takao Yoshihara , Wataru Kusaki , Tomohiro Kobayashi , Koji Hasegawa
发明人： Yuji Harada , Jun Hatakeyama , Takao Yoshihara , Wataru Kusaki , Tomohiro Kobayashi , Koji Hasegawa
CPC分类号： G03F7/0397 , C08F24/00 , C08F220/32 , G03F7/0046 , G03F7/11 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： To a resist composition, an alkali-soluble polymer having fluorinated ester-containing lactone units incorporated therein is included as an additive. The resist composition forms a resist film having a reduced contact angle after development. The resist film prevents water penetration during immersion lithography.
摘要翻译： 作为添加剂，作为抗蚀剂组合物，含有含有含氟酯的内酯单元的碱溶性聚合物。 抗蚀剂组合物形成显影后具有降低的接触角的抗蚀剂膜。 抗蚀剂膜防止浸渍光刻时的水渗透。
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6.发明授权Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition, and semiconductor substrate 有权化学放大型光致抗蚀剂组合物，使用该组合物的半导体器件的制造方法以及半导体衬底公开(公告)号：US06800551B2
公开(公告)日：2004-10-05
申请号：US10308115
申请日：2002-12-03
IPC分类号： H01L214763
CPC分类号： H01L21/02203 , G03F7/0045 , G03F7/0392 , H01L21/0274 , H01L21/312 , H01L21/76808 , H01L21/76814 , H01L21/76828 , H01L2221/1036 , Y10S438/949
摘要： To provide a chemical amplification type positive photoresist composition suited to resist patterning of a substrate presenting surface step differences, a method for manufacturing the semiconductor device employing this composition, and a semiconductor substrate. In a method for manufacturing a semiconductor device, a resist film is formed using a chemical amplification type positive photoresist composition, comprised of a base resin and a basic compound added to the base resin at a rate of 1 to 100 mmol to 100 g of the base resin, on a substrate halving surface step differences and into which the organic removing solution is deposited or oozed, and a predetermined area of the resist film is exposed to light to form a resist pattern.
摘要翻译： 为了提供一种适用于抗蚀剂图案化的化学放大型正性光致抗蚀剂组合物，呈现表面的阶梯差，使用该组合物制造半导体器件的方法以及半导体衬底。 在制造半导体器件的方法中，使用化学放大型正性光致抗蚀剂组合物形成抗蚀剂膜，该组合物由基础树脂和添加到基础树脂中的碱性化合物以1至100mmol至100g的 在基板半部分表面上的步骤差异，并且将有机去除溶液沉积或渗出到其中，并且将抗蚀剂膜的预定区域曝光以形成抗蚀剂图案。
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公开(公告)号：US20100178618A1
公开(公告)日：2010-07-15
申请号：US12686836
申请日：2010-01-13
IPC分类号： G03F7/20
CPC分类号： G03F7/0397 , G03F1/26 , G03F7/0046 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.
摘要翻译： 通过将包含含有酸不稳定基团的重复单元和光致酸产生剂的树脂的化学放大正性抗蚀剂组合物涂布在基材上，干燥以形成抗蚀剂膜，将抗蚀剂膜暴露于通过相的高能量辐射而形成图案 具有晶格状移位器阵列PEB，显影以形成阳性图案，照亮或加热阳性图案以消除酸不稳定基团以增加碱溶性并引发交联以赋予耐溶剂性，涂覆反转膜，和 将阳性图案溶解在碱性湿蚀刻剂中，以通过正/负反转形成图案。
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公开(公告)号：US20050019692A1
公开(公告)日：2005-01-27
申请号：US10909225
申请日：2004-07-30
IPC分类号： C08L71/02 , C08L101/00 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/76
CPC分类号： G03F7/0048 , G03F7/0046 , G03F7/0392 , G03F7/0395
摘要： Provided are a resist material and a pattern formation method which have a good coating property, suppresses the occurrences of microbubbles in the solution and hardly generate a various kinds of defects causing a yield reduction in device step. Specifically, a resist material comprising a non-ionic surfactant containing neither a fluorine substituent nor a silicon-containing substituent in addition to a surfactant having a fluorine substituent and a pattern formation method therewith are provided.
摘要翻译： 提供具有良好涂布性能的抗蚀剂材料和图案形成方法，抑制溶液中微泡的发生，并且难以产生导致器件步骤的成品率降低的各种缺陷。 具体而言，提供除了具有氟取代基的表面活性剂以外还含有不含氟取代基的非离子表面活性剂和含硅取代基的抗蚀剂材料及其图案形成方法。
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9.发明授权Fluorinated monomer, fluorinated polymer, resist composition, and patterning process 有权氟化单体，氟化聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08945809B2
公开(公告)日：2015-02-03
申请号：US12952304
申请日：2010-11-23
IPC分类号： G03F7/004 , G03F7/20 , G03F7/039 , C07C69/73 , C08F220/22 , C08F220/24 , C08F220/26 , C08F222/18 , C08F222/22 , C08L33/14 , C08K5/36 , C08L33/16
CPC分类号： C07C69/73 , C08F220/22 , C08F220/24 , C08F220/26 , C08F222/18 , C08F222/22 , C08K5/36 , C08L33/14 , C08L33/16 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08L2666/04
摘要： A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 is a monovalent hydrocarbon group which may have halogen or oxygen, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
摘要翻译： 氟化单体具有式（1）其中R1是H，F，甲基或三氟甲基，R2是可以具有卤素或氧的一价烃基，A是二价烃基，k1是0,1或2.聚合物 来自氟化单体的化合物可赋予适当的防水性，水滑性，酸性和水解性，并且可用作配制抗蚀剂组合物中的添加剂聚合物。
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公开(公告)号：US08105764B2
公开(公告)日：2012-01-31
申请号：US12236129
申请日：2008-09-23
CPC分类号： G03F7/2024 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/40 , H01L21/0273 , H01L21/0337 , H05K3/061 , H05K2203/0582
摘要： A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist film to high-energy radiation, post-exposure heating, and developing the exposed resist film with an alkaline developer to form a positive pattern; irradiating or heating the positive pattern to facilitate elimination of acid labile groups and crosslinking for improving alkali solubility and imparting solvent resistance; coating a reversal film-forming composition thereon to form a reversal film; and applying an alkaline wet etchant thereto for dissolving away the positive pattern.
摘要翻译： 通过将包含含酸不稳定基团的树脂，光酸产生剂和有机溶剂的化学放大的正性抗蚀剂组合物涂布在基材上，预烘烤抗蚀剂组合物，将抗蚀剂膜暴露于高分子量聚合物，通过正/负反转形成图案， 能量辐射，曝光后加热，并用碱性显影剂显影曝光的抗蚀剂膜以形成正图案; 照射或加热阳性图案以便于消除酸不稳定基团和交联以改善碱溶解性并赋予耐溶剂性; 在其上涂覆反转成膜组合物以形成反转膜; 并向其施加碱性湿蚀刻剂以溶解正型图案。
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