公开(公告)号：US07663131B2

公开(公告)日：2010-02-16

申请号：US11715728

申请日：2007-03-08

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Guangli Liu

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Guangli Liu

IPC分类号： H01L47/00

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

摘要： A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm2 for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co60Fe20B20 layer and an upper crystalline Co75Fe25 layer to promote a smoother and more uniform AlOx tunnel barrier. A “stronger oxidation” state is realized in the AlOx layer by depositing a thicker than normal Al layer or extending the ROX cycle time for Al oxidation and thereby reduces tunneling hot spots. The NiFe free layer has a low Fe content of about 8 to 21 atomic % and the Hf content in the NiFeHf capping layer is from 10 to 25 atomic %. A Ta hard mask is formed on the capping layer. EC (best) is reduced from >100 ppm to

摘要翻译： 公开了一种在1兆比特MRAM器件实现高MR值，低磁致伸缩以及约1100Ωm2的RA的情况下最小化误差计数（EC）的MTJ。 MTJ具有由较低的非晶Co60Fe20B20层和上层结晶Co75Fe25层制成的复合AP1钉扎层，以促进更平滑和更均匀的AlOx隧道势垒。 在AlOx层中通过沉积比正常的Al层更厚或者延长了用于Al氧化的ROX循环时间，从而减少了隧道热点，实现了“更强的氧化”状态。 NiFe自由层的Fe含量低，为约8〜21原子％，NiFeHf覆盖层的Hf含量为10〜25原子％。 在封盖层上形成Ta硬掩模。 通过使用优选的MTJ构型，EC（最佳）从> 100ppm降低到<10ppm。

公开(公告)号：US07602590B2

公开(公告)日：2009-10-13

申请号：US11034113

申请日：2005-01-12

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01F41/303 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10

摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

摘要翻译： TMR读取头中的常规自由层已经被两个或更多个磁性层的复合物代替，其中一个是富铁的结果是具有比现有技术的器件更高的MR比的改进的器件，同时仍保持自由层 柔软度和可接受的磁致伸缩。 还描述了用于制造该装置的方法。

公开(公告)号：US20080217710A1

公开(公告)日：2008-09-11

申请号：US11715728

申请日：2007-03-08

申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Guangli Liu

发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Guangli Liu

IPC分类号： H01L43/00

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

摘要： A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm2 for 1 Mbit MRAM devices is disclosed. The MTJ has a composite AP1 pinned layer made of a lower amorphous Co60Fe20B20 layer and an upper crystalline Co75Fe25 layer to promote a smoother and more uniform AlOx tunnel barrier. A “stronger oxidation” state is realized in the AlOx layer by depositing a thicker than normal Al layer or extending the ROX cycle time for Al oxidation and thereby reduces tunneling hot spots. The NiFe free layer has a low Fe content of about 8 to 21 atomic % and the Hf content in the NiFeHf capping layer is from 10 to 25 atomic %. A Ta hard mask is formed on the capping layer. EC (best) is reduced from >100 ppm to

摘要翻译： 公开了一种MTJ，其对于1Mbit MRAM器件实现了对MR值的高MR值，低磁致伸缩以及RA约为1100Ωm2的最小化误差计数（EC）。 MTJ具有由较低的无定形Co 60 Fe 20 B 20 O 20层制成的复合AP1钉扎层和上部结晶Co 75 Fe 2 O 3层以促进更平滑和更均匀的AlO x隧道势垒。 在AlOx层中通过沉积比正常的Al层更厚或者延长了用于Al氧化的ROX循环时间，从而减少了隧道热点，实现了“更强的氧化”状态。 NiFe自由层的Fe含量低，为约8〜21原子％，NiFeHf覆盖层的Hf含量为10〜25原子％。 在封盖层上形成Ta硬掩模。 通过使用优选的MTJ构型，EC（最佳）从> 100ppm降低到<10ppm。

公开(公告)号：US07358100B2

公开(公告)日：2008-04-15

申请号：US11891923

申请日：2007-08-14

申请人： Wei Cao ,  Chyu-Jiuh Torng ,  Cheng Horng ,  Ruying Tong ,  Chen-Jung Chien ,  Liubo Hong

发明人： Wei Cao ,  Chyu-Jiuh Torng ,  Cheng Horng ,  Ruying Tong ,  Chen-Jung Chien ,  Liubo Hong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  H01L27/228

摘要： A method to fabricate an MTJ device and its connections to a CMOS integrated circuit is described. The device is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum.

摘要翻译： 描述了一种制造MTJ器件及其与CMOS集成电路的连接的方法。 该设备由三层构建。 底层用作中心层的种子层，其为α钽，而第三最顶层选择为其平滑度，其与层间电介质材料的相容性以及其保护下面的钽的能力。

公开(公告)号：US07352543B2

公开(公告)日：2008-04-01

申请号：US11043624

申请日：2005-01-26

申请人： Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

发明人： Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

IPC分类号： G11B5/33

CPC分类号： G11B5/39

摘要： The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.

公开(公告)号：US07336452B2

公开(公告)日：2008-02-26

申请号：US11036957

申请日：2005-01-14

申请人： Moris Dovek ,  Po-Kang Wang ,  Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Yun-Fei Li

发明人： Moris Dovek ,  Po-Kang Wang ,  Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Yun-Fei Li

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49036 ,  Y10T29/49044 ,  Y10T29/49046

摘要： In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.

摘要翻译： 在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。 这样的结构很难制造。 本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。 该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。 在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。 在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。 还描述了用于制造该结构的方法。

公开(公告)号：US20080032423A1

公开(公告)日：2008-02-07

申请号：US11497162

申请日：2006-08-01

申请人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

发明人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC分类号： G01N33/536

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

摘要翻译： 包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响 磁性层产生补偿横向磁各向异性。 通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

公开(公告)号：US07327540B2

公开(公告)日：2008-02-05

申请号：US10858029

申请日：2004-06-01

申请人： Yun-Fei Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng

发明人： Yun-Fei Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/39

CPC分类号： G11B5/39 ,  Y10T428/11 ,  Y10T428/115

摘要： A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.

摘要翻译： 公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。 由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。 新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

公开(公告)号：US07275304B2

公开(公告)日：2007-10-02

申请号：US11074244

申请日：2005-03-04

申请人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

发明人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048

摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

摘要翻译： 用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。 研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。 主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。 另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。 与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。 此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

公开(公告)号：US20070215911A1

公开(公告)日：2007-09-20

申请号：US11378555

申请日：2006-03-17

申请人： Chyu-Jiuh Torng ,  Wei Cao ,  Terry Ko

发明人： Chyu-Jiuh Torng ,  Wei Cao ,  Terry Ko

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L43/12 ,  H01L43/08

摘要： An MTJ MRAM cell is formed by using a reactive ion etch (RIE) to pattern an MTJ stack on which there has been formed a bilayer Ta/TaN hard mask. The hard mask is formed by patterning a masking layer that has been formed by depositing a layer of TaN over a layer of Ta on the MTJ stack. After the stack is patterned, the TaN layer serves at least two advantageous purposes: 1) it protects the Ta layer from oxidation during the etching of the stack and 2) it serves as a surface having excellent adhesion properties for a subsequently deposited dielectric layer.

摘要翻译： 通过使用反应离子蚀刻（RIE）来形成已经形成双层Ta / TaN硬掩模的MTJ叠层来形成MTJ MRAM电池。 硬掩模通过图案化掩模层而形成，该掩模层通过在MTJ堆叠上的Ta层上沉积TaN层而形成。 在堆叠被图案化之后，TaN层起至少两个有利的作用：1）它在保护叠层的过程中保护Ta层免受氧化，2）它用作随后沉积的介电层具有优异粘合性能的表面。