公开(公告)号：US20100066884A1

公开(公告)日：2010-03-18

申请号：US12623052

申请日：2009-11-20

申请人： Toshiaki Ono ,  Tomoyuki Noda ,  Hidekazu Takahashi

发明人： Toshiaki Ono ,  Tomoyuki Noda ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H04N5/3741

摘要： An imaging apparatus includes a pixel unit array and a driving unit. Each pixel unit includes a plurality of photoelectric conversion units, a charge-voltage converter common to the plurality of photoelectric conversion units, a plurality of transfer units which transfer electric charges generated by the plurality of photoelectric conversion units to the charge-voltage converter, an output unit which outputs a signal based on the electric charges to a signal line, and a setting unit which sets the electric potential of the charge-voltage converter. Each pixel unit is selected or deselected in accordance with the electric potential set in the charge-voltage converter. The driving unit drives the pixel unit array so that the output unit continuously outputs, to the signal line, the signal based on the electric charges generated by the plurality of photoelectric conversion units in the selected pixel unit without performing an operation of deselecting the selected pixel unit.

公开(公告)号：US20090261301A1

公开(公告)日：2009-10-22

申请号：US12453579

申请日：2009-05-15

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： H01B1/04 ,  C01B33/12

CPC分类号： C30B15/00 ,  C30B29/06

摘要： A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

摘要翻译： 通过将生长装置内的惰性气氛中的氢分压设定为40Pa以上且400Pa以下，通过CZ工艺制造硅单晶，并且通过将单晶的主干部分生长为无缺陷的方式 区域没有成长缺陷。 因此，可以容易地制造整个表面由无缺陷区域构成的晶片，并且可以充分均匀地形成BMD。 可以广泛使用这样的晶片，因为它可以显着减少要在其上形成的集成电路的特征缺陷的产生，并有助于响应于进一步小型化和更高密度的电路的需求而提高作为衬底的生产成品率。

公开(公告)号：US07384480B2

公开(公告)日：2008-06-10

申请号：US11334536

申请日：2006-01-19

申请人： Wataru Sugimura ,  Toshiaki Ono ,  Masataka Hourai

发明人： Wataru Sugimura ,  Toshiaki Ono ,  Masataka Hourai

IPC分类号： C30B35/00

CPC分类号： C30B35/00 ,  C30B15/20 ,  C30B29/06 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a gas mixing unit for uniformly mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas.

摘要翻译： 该半导体单晶的制造装置包括：坩埚; 加热器 坩埚驱动单元; 用于容纳坩埚和加热器的室; 以及氢混合气体供给装置，其向所述室供给包含惰性气体的氢混合气体，所述氢混合气体与含有氢原子的含氢气体混合，其中所述氢混合气体供给装置包括：含氢气体供给单元; 惰性气体供应单元; 含氢气体流量控制器; 惰性气体流量控制器; 以及用于将含氢气体和惰性气体均匀混合在一起以形成氢气混合气体的气体混合单元。

公开(公告)号：US20080036891A1

公开(公告)日：2008-02-14

申请号：US11833170

申请日：2007-08-02

申请人： Toshiaki Ono ,  Toru Koizumi ,  Tetsuya Itano

发明人： Toshiaki Ono ,  Toru Koizumi ,  Tetsuya Itano

IPC分类号： H04N5/335

CPC分类号： H04N5/378 ,  H04N5/3598

摘要： A photoelectric conversion device includes a pixel unit including a photoelectric converter, an amplifier arranged on the output side of the pixel unit, an output unit arranged on the output side of the amplifier, a first restriction circuit, and a second restriction circuit. The first restriction circuit restricts, between the amplifier and the output unit, a noise level read out from the pixel unit via the amplifier in reading out the noise level from the pixel unit. The second restriction circuit restricts, between the photoelectric converter and the amplifier, a noise level to be provided to the amplifier in reading out the noise level from the pixel unit.

摘要翻译： 光电转换装置包括：像素单元，包括光电转换器，布置在像素单元的输出侧的放大器，布置在放大器的输出侧的输出单元，第一限制电路和第二限制电路。 第一限制电路在放大器和输出单元之间限制从像素单元读出噪声电平时经由放大器从像素单元读出的噪声电平。 第二限制电路在光电转换器和放大器之间限制在从像素单元读出噪声电平时提供给放大器的噪声电平。

公开(公告)号：US07320731B2

公开(公告)日：2008-01-22

申请号：US11488408

申请日：2006-07-17

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： C30B15/20

CPC分类号： C30B15/203 ,  C30B29/06

摘要： A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating region will be generated is provided. Such a process for growing a silicon single crystal is characterized by using an atmospheric gas for growing a single crystal which is a hydrogen-containing gas which contains a hydrogen-containing substance, and pulling the silicon single crystal at a pulling rate ranging from a value with which the ratio (a/b) of the diameter (b) of the silicon single crystal and the outer diameter (a) of a ring which consists of the OSF-generating region in the radial direction of the silicon single crystal is not higher than 0.77 to another value with which the OSF-generating region disappears at the center part of the crystal.

摘要翻译： 提供了能够以不低于将产生OSF的区域的临界牵引速率的拉拔速度生长硅单晶的硅单晶的生长方法。 这种用于生长硅单晶的方法的特征在于使用大气气体来生长含有含氢物质的含氢气体的单晶，并以拉伸速度从一个值 硅单晶的直径（b）与由硅单晶的径向的OSF生成区域构成的环的外径（a）的比（a / b）不高 大于0.77到OSF产生区域在晶体中心部分消失的另一个值。

公开(公告)号：US20070095274A1

公开(公告)日：2007-05-03

申请号：US11441352

申请日：2006-05-26

申请人： Wataru Sugimura ,  Toshiaki Ono ,  Masataka Hourai

发明人： Wataru Sugimura ,  Toshiaki Ono ,  Masataka Hourai

IPC分类号： H01L21/322 ,  C30B15/14

CPC分类号： H01L21/3225 ,  C30B15/00 ,  C30B29/06 ,  C30B33/02

摘要： A silicon single crystal is grown by the Czochralski method in an inert atmosphere that includes a gaseous substance containing hydrogen atoms. Wafers obtained from the resulting silicon single crystal are subjected to high temperature heat treatment in a non-oxidizing atmosphere at a temperature of not lower than 1000° C. but not more than 1300° C. The high temperature heat treatment step is preceded by low temperature heat treatment at a lower temperature.

摘要翻译： 在包含含有氢原子的气态物质的惰性气氛中，通过Czochralski法生长硅单晶。 从得到的硅单晶获得的晶片在非氧化性气氛中在不低于1000℃但不高于1300℃的温度下进行高温热处理。高温热处理步骤之前为低 在较低温度下进行温度热处理。

公开(公告)号：US20060266278A1

公开(公告)日：2006-11-30

申请号：US11439486

申请日：2006-05-22

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： C30B21/06 ,  C30B15/00 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B25/20 ,  C30B33/02

摘要： A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resisitivity of 0.025 to 0.08 Ω cm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.

摘要翻译： 通过CZ法生长硅单晶。 加入晶体生长的硅熔体，掺杂剂使得晶体的电阻率为0.025〜0.08Ω·cm。 与掺杂剂一样，将碳添加到硅熔体中。 将晶体在含氢惰性气氛中拉动。

公开(公告)号：US20060177991A1

公开(公告)日：2006-08-10

申请号：US11346256

申请日：2006-02-03

申请人： Satoshi Murakami ,  Toshiaki Ono ,  Akihiko Endo

发明人： Satoshi Murakami ,  Toshiaki Ono ,  Akihiko Endo

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： By using, in the so-called Smart Cut process comprising the steps of bonding an ion-implanted active layer wafer to a base wafer and later splitting off the base wafer to produce a SOI wafer, a wafer doped with C in a single crystal ingot growing process (desirably to a carbon concentration of not lower than 1×1016 atoms/cm3) as the active layer wafer, it becomes possible to exhibit the effect of inhibiting agglomeration of interstitial Si atoms and prevent development of stacking faults even when the SOI wafer is subjected to thermal oxidation treatment. Furthermore, the technique of sacrificial oxidation can be applied to production of SOI wafers and, thus, a damaged layer formed on the SOI layer surface can be removed and surface roughness can be improved without impairing crystalline integrity and, further, SOI layer thickness can be efficiently reduced.

摘要翻译： 通过在所谓的智能切割工艺中使用包括将离子注入的活性层晶片粘合到基底晶片并随后将基底晶片分离以产生SOI晶片的步骤，在单晶锭中掺杂有C的晶片 作为活性层晶片的生长过程（优选为不低于1×10 16原子/ cm 3的碳浓度）可以显示抑制聚集的作用 间隙Si原子，并且即使当SOI晶片经受热氧化处理时也防止堆垛层错的发展。 此外，牺牲氧化的技术可以应用于SOI晶片的生产，因此可以去除在SOI层表面上形成的损伤层，并且可以在不损害晶体完整性的情况下改善表面粗糙度，并且还可以将SOI层厚度 有效减少

公开(公告)号：US07014704B2

公开(公告)日：2006-03-21

申请号：US10455609

申请日：2003-06-06

申请人： Toshiaki Ono ,  Tadami Tanaka ,  Shigeru Umeno ,  Eiichi Asayama ,  Hideshi Nishikawa

发明人： Toshiaki Ono ,  Tadami Tanaka ,  Shigeru Umeno ,  Eiichi Asayama ,  Hideshi Nishikawa

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/206

摘要： A method for growing a silicon single crystal used for semiconductor integrated circuit devices, wherein the single crystal is grown by the CZ method at a nitrogen concentration of 1×1013 atoms/cm3–1×1015 atoms/cm3 with a cooling rate of not less than 2.5° C./min at a crystal temperature of 1150° C.–1000° C., in which case, the pulling rate is adjusted such that the outside diameter of a circular region including oxidation-induced stacking faults generated at the center of a wafer which is subjected to the oxidation heat treatment at high temperature is not more than ⅗ of the wafer diameter, wherein the wafer is prepared by slicing the grown single crystal. In the growth method, the concentration of oxygen in the silicon single crystal is preferably not more than 9×1017 atoms/cm3 (ASTM '79). With this method, the silicon single crystal, in which the generation of Grown-in defects can be effectively suppressed, can be produced in a simple process without any increase in the production cost. Moreover, a specification of the oxygen concentration and the application of the outward diffusion treatment are capable of producing a wafer, which is optimally used for monitoring particles.

摘要翻译： 一种生长用于半导体集成电路器件的硅单晶的方法，其中通过CZ法以1×10 3原子/ cm 3的氮浓度生长单晶。 -1×10 15原子/ cm 3，冷却速率不低于2.5℃/分钟，晶体温度为1150℃-1000℃， 在这种情况下，调整拉伸速度，使得在高温下进行氧化热处理的晶片的中心处产生的氧化诱发堆垛层错的圆形区域的外径不大于 晶片直径，其中通过对生长的单晶进行切片来制备晶片。 在生长方法中，硅单晶中氧的浓度优选不超过9×10 17原子/ cm 3（ASTM '79）。 利用这种方法，可以在简单的工艺中生产出能够有效抑制生成缺陷的硅单晶，而不会增加生产成本。 此外，氧浓度的规格和向外扩散处理的应用能够生产最佳地用于监测颗粒的晶片。

公开(公告)号：US06835245B2

公开(公告)日：2004-12-28

申请号：US09883922

申请日：2001-06-20

申请人： Toshiaki Ono ,  Tadami Tanaka ,  Eiichi Asayama ,  Hideshi Nishikawa ,  Masataka Horai

发明人： Toshiaki Ono ,  Tadami Tanaka ,  Eiichi Asayama ,  Hideshi Nishikawa ,  Masataka Horai

IPC分类号： C30B3302

CPC分类号： C30B29/06 ,  C30B15/206

摘要： Epitaxial wafers showing marked IG effects can be manufactured from silicon single crystals doped or not doped with nitrogen without requiring any additional heat treatment process step while reducing the density of epitaxial layer defects. According to the first manufacturing method, an epitaxial layer is allowed to grow on the surface of a wafer sliced from a single crystal produced by employing a cooling rate of not less than 7.3° C./min in the temperature range of 1200-1050° C. in the step of pulling up thereof. According to the second manufacturing method, an epitaxial layer is allowed to grow on the surface of a silicon wafer sliced from a silicon single crystal doped with 1×1012 atoms/cm3 to 1×1014 atoms/cm3 as produced by employing a cooling rate of not less than 2.7° C./min in the temperature range of 1150-1020° C. and then a cooling rate of not more than 1.2° C./min in the temperature range of 1000-850° C. in the step of pulling up thereof.

摘要翻译： 显示出显着的IG效应的外延晶片可以由掺杂或不掺杂氮的单晶硅制造，而不需要任何额外的热处理工艺步骤，同时降低外延层缺陷的密度。 根据第一种制造方法，允许外延层在从在1200-1050°的温度范围内采用不低于7.3℃/分钟的冷却速率制备的单晶切片的晶片的表面上生长 C.在拉起它的步骤。 根据第二制造方法，允许外延层在从掺杂有1×10 12原子/ cm 3至1×10 14原子/ cm 3的硅单晶切片的硅晶片的表面上生长， 通过在1150-1020℃的温度范围内使用不低于2.7℃/分钟的冷却速率，然后在1000℃的温度范围内的冷却速度不超过1.2℃/ 850℃。