High density trench DMOS transistor with trench bottom implant
    81.
    发明授权
    High density trench DMOS transistor with trench bottom implant 失效
    高密度沟槽DMOS晶体管,具有沟槽底部植入

    公开(公告)号:US5929481A

    公开(公告)日:1999-07-27

    申请号:US964419

    申请日:1997-11-04

    摘要: A trenched DMOS transistor overcomes the problem of a parasitic JFET at the trench bottom (caused by deep body regions extending deeper than the trench) by providing a doped trench bottom implant region at the bottom of the trench and extending into the surrounding drift region. This trench bottom implant region has the same doping type, but is more highly doped, than the surrounding drift region. The trench bottom implant region significantly reduces the parasitic JFET resistance by optimizing the trench bottom implant dose, without creating reliability problems.

    摘要翻译: 沟槽DMOS晶体管通过在沟槽的底部提供掺杂的沟槽底部注入区域并延伸到周围的漂移区域来克服沟槽底部的寄生JFET(由深沟槽深度延伸的深度)引起的问题。 该沟槽底部注入区域具有与周围漂移区域相同的掺杂类型,但是掺杂度更高。 通过优化沟槽底部注入剂量,沟槽底部注入区域显着降低寄生JFET电阻,而不会产生可靠性问题。

    Method and apparatus for emissivity independent self-calibrating of a
multiwavelength pyrometer
    82.
    发明授权
    Method and apparatus for emissivity independent self-calibrating of a multiwavelength pyrometer 失效
    用于多波长高温计的发射率独立自校准的方法和装置

    公开(公告)号:US5690429A

    公开(公告)日:1997-11-25

    申请号:US783640

    申请日:1997-01-14

    申请人: Daniel Ng

    发明人: Daniel Ng

    IPC分类号: G01J5/60 G01K15/00 G01J5/00

    摘要: Self calibrating a pyrometer includes taking two different temperatures thereby generating two voltage spectra, calculating the spectra ratio R of the two voltage spectra, determining the slope of the plot of the logarithm of the spectrum ratio versus c.sub.2 /.lambda. to arrive at a relationship between T.sub.1 and T.sub.2, solving for T.sub.1 within the spectra ratio, and arriving at a value for T.sub.2 by substituting experimentally measured values for R into the spectra ratio equation. This method is then repeated for the determination of T.sub.2. The pyrometer calibration constant h.sub..lambda. can then be determined by dividing the measured voltage spectra by the planck function at the known temperature (i.e., T.sub.1 or T.sub.2). Measurement of subsequent temperatures can now be determined by measuring the voltage spectra and dividing by the calibration constant h.sub..lambda. which will result in a planck function L.sub..lambda. (T) which can be solved to yield the surface temperature.

    摘要翻译: 自校准高温计包括采取两个不同的温度,从而产生两个电压谱,计算两个电压光谱的光谱比R,确定光谱比对数相对于c2 /λ的对数曲线的斜率,得到T1 和T2,在光谱比内求解T1,并将R的实验测量值代入光谱比方程,达到T2值。 然后重复该方法以确定T2。 然后可以通过将测量的电压谱除以在已知温度(即T1或T2)下的平板功能来确定高温计校准常数hλ。 随后的温度的测量现在可以通过测量电压谱和除以校准常数hλ来确定,这将导致可以解决以产生表面温度的平面函数L lambda(T)。

    Lockable quick release mechanism
    83.
    发明授权
    Lockable quick release mechanism 失效
    可锁定快速释放机构

    公开(公告)号:US5511894A

    公开(公告)日:1996-04-30

    申请号:US292182

    申请日:1994-08-19

    申请人: Daniel Ng

    发明人: Daniel Ng

    摘要: In a quick release mechanism, a prong is retained around a skewer, the skewer extending from a fork block, between a bearing surface on the fork block and a bearing surface on a movable member. The movable member is mounted on the skewer and is axially movable thereon. The movable member is moved toward the fork block through a predetermined distance by a moving device which is mounted on the skewer and is axially movable relative thereto. The range of movement of the moving device is adjusted by an adjusting knob which is positioned at various axial positions on the skewer.

    摘要翻译: 在快速释放机构中,叉子围绕叉子保持,扦子从叉块延伸,在叉块上的支承表面和可移动构件上的支承表面之间。 可动构件安装在串上并且可轴向移动。 可移动部件通过安装在扦子上并可相对于其轴向移动的移动装置朝向叉块移动预定距离。 移动装置的移动范围通过调节旋钮来调节,调节旋钮位于串上的各种轴向位置。

    PROCESS FOR REFINING FATS AND OILS
    84.
    发明申请
    PROCESS FOR REFINING FATS AND OILS 有权
    精炼油和油的工艺

    公开(公告)号:US20090050536A1

    公开(公告)日:2009-02-26

    申请号:US12279205

    申请日:2007-02-09

    申请人: Daniel Ng

    发明人: Daniel Ng

    IPC分类号: C10G17/00 B01J19/00

    CPC分类号: C11B3/14 C11B3/001 C11C1/02

    摘要: The present invention relates to a process for cooling fatty acid distillate from scrubbing section in a fats and oils refinery comprising cooling the fatty acid distillate by heat recovery in at least one heat-exchanging zone with refined oils having a temperature above about 50° C. heating the refined fats and oils to a temperature above about 70° C. The present invention relates further to a process for refining crude fats and oils, and refining plant for refining crude fats and oils.

    摘要翻译: 本发明涉及一种从脂肪和精油炼油厂的洗涤部分冷却脂肪酸馏出物的方法,包括通过在至少一个热交换区中与温度高于约50℃的精制油进行热回收来冷却脂肪酸馏出物。 将精炼的脂肪和油加热至高于约70℃的温度。本发明还涉及精炼粗脂肪和油的方法,以及用于精制粗脂肪和油的精制装置。

    Lockable quick release mechanism
    87.
    发明授权
    Lockable quick release mechanism 失效
    可锁定快速释放机构

    公开(公告)号:US5362173A

    公开(公告)日:1994-11-08

    申请号:US945907

    申请日:1992-09-17

    申请人: Daniel Ng

    发明人: Daniel Ng

    摘要: In a quick release mechanism, a prong is retained around a skewer, the skewer extending from a fork block, between a bearing surface on the fork block and a bearing surface on a movable member. The movable member is mounted on the skewer and is axially movable thereon. The movable member is moved toward the fork block through a predetermined distance by a moving device which is mounted on the skewer and is axially movable relative thereto. The range of movement of the moving device is adjusted by an adjusting knob which is positioned at various axial positions on the skewer.

    摘要翻译: 在快速释放机构中,叉子围绕叉子保持,扦子从叉块延伸,在叉块上的支承表面和可移动构件上的支承表面之间。 可动构件安装在串上并且可轴向移动。 可移动部件通过安装在扦子上并可相对于其轴向移动的移动装置朝向叉块移动预定距离。 移动装置的移动范围通过调节旋钮来调节,调节旋钮位于串上的各种轴向位置。

    Apparatus for pairwise transport of elongate objects
    88.
    发明授权
    Apparatus for pairwise transport of elongate objects 失效
    成对输送细长物体的装置

    公开(公告)号:US5316192A

    公开(公告)日:1994-05-31

    申请号:US916152

    申请日:1992-07-31

    申请人: Daniel Ng

    发明人: Daniel Ng

    CPC分类号: B60R9/12 B60R9/048

    摘要: A transport apparatus for elongate objects, primarily so-called snow-boards or monoskis, is provided with a load strut which extends transversely across a vehicle roof and is secured in the side edges thereof. The load strut has a holder device with at least one accommodation space for objects, with the longitudinal direction of the space in the direction of travel of the vehicle and with the lateral direction of the space inclining in relation to the vertical. In order to provide reliable retention and superior transport capacity without the risk of projecting parts of the objects coming into contact with the vehicle roof, the holder device is provided with a rigid anchorage arrangement which, with a lower portion, straddles and is secured on the strut. The holder device is further provided with three fingers inclining in relation to the vertical and obliquely upwardly directed, the fingers being provided with soft gripping members which define the accommodation spaces. The holder device is also provided with a strap which retains the objects in the accommodation spaces and is secured in the two outermost fingers, in one of these by means of an adjustable fastener.

    摘要翻译: PCT No.PCT / SE91 / 00056 Sec。 371日期:1992年7月31日 102(e)日期1992年7月31日PCT 1991年1月25日PCT PCT。 公开号WO91 / 11344 日本1991年8月8日。用于细长物体(主要是所谓的雪板或单体)的运输装置设置有横向跨越车顶延伸并固定在其侧边缘的负载支柱。 负载支柱具有一个保持装置,其具有用于物体的至少一个容纳空间,空间的纵向方向在车辆的行进方向上并且空间的横向方向相对于垂直方向倾斜。 为了提供可靠的保持和优良的运输能力,而没有使物体与车顶接触的部分突出的风险,保持装置设置有刚性锚固装置,其具有下部跨接并固定在 支撑。 保持器装置还设置有三个相对于垂直和倾斜向上指向倾斜的指状物,指状物设置有限定容纳空间的柔软的夹紧构件。 保持装置还设置有将物体保持在容纳空间中并且通过可调节紧固件固定在两个最外面的指状物中的条带中的一个。

    MOSFET having buried shield plate for reduced gate/drain capacitance
    89.
    发明授权
    MOSFET having buried shield plate for reduced gate/drain capacitance 失效
    MOSFET具有掩埋屏蔽板,用于降低栅极/漏极电容

    公开(公告)号:US6107160A

    公开(公告)日:2000-08-22

    申请号:US64709

    申请日:1998-04-22

    摘要: Gate to drain capacitance in a lateral DMOS and vertical DMOS field effect transistor is minimized by providing a conductive shield plate under the gate and between the gate and the drain of the transistor. In operation, the shield plate is preferably connected to a DC voltage potential and coupled to AC ground for RF power applications. The shield plate is readily fabricated in a conventional polysilicon gate process by adding one additional polysilicon deposition (or other suitable material), one additional mask, and one additional etch step. The shield plate can include a raised portion which provides lateral capacitive isolation between the gate and the drain. Alternatively, a shield contact can be provided above the shield plate and between the gate and drain to provide lateral isolation.

    摘要翻译: 通过在晶体管的栅极之下和晶体管的栅极和漏极之间提供导电屏蔽板,使侧向DMOS和垂直DMOS场效应晶体管中的栅极漏极电容最小化。 在操作中,屏蔽板优选地连接到DC电压电位并且耦合到用于RF功率应用的AC地。 通过添加一个额外的多晶硅沉积(或其它合适的材料),一个额外的掩模和一个附加的蚀刻步骤,屏蔽板容易地在传统的多晶硅栅极工艺中制造。 屏蔽板可以包括在栅极和漏极之间提供横向电容隔离的凸起部分。 或者,可以在屏蔽板上方以及栅极和漏极之间提供屏蔽接触以提供侧向隔离。