公开(公告)号：US20100012932A1

公开(公告)日：2010-01-21

申请号：US12173995

申请日：2008-07-16

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

摘要： A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.

摘要翻译： 一种制造方法与具有小于100nm厚的金属氧化物活性层的半导体器件结合使用，并且上主表面和下主表面具有邻接接合的材料以形成底层界面和上覆界面。 制造方法包括通过选择用于金属氧化物活性层的金属氧化物并通过选择用于邻接接合的材料的特定材料来控制下面的界面和上覆界面中的界面相互作用来调节相邻金属氧化物中的载流子密度。 该方法还包括一个或两个步骤，通过对形成下面界面的组分的下层材料进行表面处理来控制底层界面中的相互作用，并且通过在将材料沉积在其上的材料之前进行的金属氧化物膜的表面处理来控制上覆界面中的相互作用 金属氧化物层。

公开(公告)号：US09947704B1

公开(公告)日：2018-04-17

申请号：US15296586

申请日：2016-10-18

申请人： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

发明人： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

IPC分类号： H01L27/146

CPC分类号： H01L27/14616 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14692

摘要： A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200° C., and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200° C. in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.

公开(公告)号：US09520437B2

公开(公告)日：2016-12-13

申请号：US14460054

申请日：2014-08-14

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L27/30 ,  H01L51/42

CPC分类号： H01L27/14663 ,  H01L27/14612 ,  H01L27/14658 ,  H01L27/14692 ,  H01L27/308 ,  H01L51/4293

摘要： A method of fabricating an X-ray imager including the steps of forming an etch stop layer on a glass substrate and depositing a stack of semiconductor layers on the etch stop layer to form a sensor plane. Separating the stack into an array of PIN photodiodes. Depositing a layer of insulating material on the array to form a planarized surface and forming vias through the insulating layer into communication with an upper surface of each photodiode and forming metal contacts on the planarized surface through the vias in contact with each photodiode. Fabricating an array of MOTFTs in an active pixel sensor configuration backplane on the planarized surface and in electrical communication with the contacts, to provide a sensor plane/MOTFT backplane interconnected combination. Attaching a flexible support carrier to the MOTFT backplane and removing the glass substrate. A scintillator is then laminated on the array of photodiodes.

摘要翻译： 一种制造X射线成像仪的方法，包括以下步骤：在玻璃衬底上形成蚀刻停止层，并在蚀刻停止层上淀积一叠半导体层以形成传感器平面。 将堆叠分成PIN光电二极管阵列。 在阵列上沉积绝缘材料层以形成平坦化表面，并且通过绝缘层形成通孔，与每个光电二极管的上表面连通，并通过与每个光电二极管接触的通孔在平坦化表面上形成金属触点。 在平坦化表面上的有源像素传感器配置底板中和与触点电连通的MOTFT阵列制造，以提供传感器平面/ MOTFT背板互连的组合。 将柔性支撑载体安装到MOTFT背板上，并拆下玻璃基板。 然后将闪烁体层压在光电二极管阵列上。

公开(公告)号：US20160049441A1

公开(公告)日：2016-02-18

申请号：US14460054

申请日：2014-08-14

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L27/146

CPC分类号： H01L27/14663 ,  H01L27/14612 ,  H01L27/14658 ,  H01L27/14692 ,  H01L27/308 ,  H01L51/4293

摘要： A method of fabricating an X-ray imager including the steps of forming an etch stop layer on a glass substrate and depositing a stack of semiconductor layers on the etch stop layer to form a sensor plane. Separating the stack into an array of PIN photodiodes. Depositing a layer of insulating material on the array to form a planarized surface and forming vias through the insulating layer into communication with an upper surface of each photodiode and forming metal contacts on the planarized surface through the vias in contact with each photodiode. Fabricating an array of MOTFTs in an active pixel sensor configuration backplane on the planarized surface and in electrical communication with the contacts, to provide a sensor plane/MOTFT backplane interconnected combination. Attaching a flexible support carrier to the MOTFT backplane and removing the glass substrate. A scintillator is then laminated on the array of photodiodes.

摘要翻译： 一种制造X射线成像仪的方法，包括以下步骤：在玻璃衬底上形成蚀刻停止层，并在蚀刻停止层上淀积一叠半导体层以形成传感器平面。 将堆叠分成PIN光电二极管阵列。 在阵列上沉积绝缘材料层以形成平坦化表面，并且通过绝缘层形成通孔，与每个光电二极管的上表面连通，并通过与每个光电二极管接触的通孔在平坦化表面上形成金属触点。 在平坦化表面上的有源像素传感器配置底板中和与触点电连通的MOTFT阵列制造，以提供传感器平面/ MOTFT背板互连的组合。 将柔性支撑载体安装到MOTFT背板上，并拆下玻璃基板。 然后将闪烁体层压在光电二极管阵列上。

公开(公告)号：US09257490B2

公开(公告)日：2016-02-09

申请号：US14288577

申请日：2014-05-28

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01J9/00 ,  H01L27/32

CPC分类号： H01L27/3218 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/5284

摘要： A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

摘要翻译： 全色AM OLED包括透明基板，位于基板的上表面上的滤色器和金属氧化物薄膜晶体管背板，其位于滤色器上并且限定像素阵列。 OLED阵列形成在背板上并且定位成以全色显示器向下通过背板，滤色器和基板发光。 由每个OLED发射的光包括第一发射带，其波长在两种原色的范围内延伸，第二发射带具有延伸超过剩余原色范围的波长。 滤色器包括每个像素，将第一发射带分成两个分开的原色的两个区和通过第二发射带的第三区。

公开(公告)号：US08907336B2

公开(公告)日：2014-12-09

申请号：US13758293

申请日：2013-02-04

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L21/02

CPC分类号： H01L29/04 ,  H01L21/00 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/16 ,  H01L21/28556 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/5012

摘要： A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.

摘要翻译： 薄膜半导体器件具有包括非晶半导体离子金属氧化物和非晶绝缘共价金属氧化物的混合物的半导体层。 一对端子被定位成与半导体层连通并且限定导电通道，并且栅极端子定位成与导电沟道连通并进一步定位成控制沟道的导通。 本发明还包括在沉积过程中沉积包括使用氮气的混合物的方法，以控制所得半导体层中的载流子浓度。

公开(公告)号：US20140273319A1

公开(公告)日：2014-09-18

申请号：US14288577

申请日：2014-05-28

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L27/32

CPC分类号： H01L27/3218 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/5284

摘要： A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

摘要翻译： 全色AM OLED包括透明基板，位于基板的上表面上的滤色器和金属氧化物薄膜晶体管背板，其位于滤色器上并且限定像素阵列。 OLED阵列形成在背板上并且定位成以全色显示器向下通过背板，滤色器和基板发光。 由每个OLED发射的光包括第一发射带，其波长在两种原色的范围内延伸，第二发射带具有延伸超过剩余原色范围的波长。 滤色器包括每个像素，将第一发射带分成两个分开的原色的两个区和通过第二发射带的第三区。

公开(公告)号：US08129720B2

公开(公告)日：2012-03-06

申请号：US13116292

申请日：2011-05-26

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969

摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

摘要翻译： 在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料， 导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

公开(公告)号：US07977868B2

公开(公告)日：2011-07-12

申请号：US12178209

申请日：2008-07-23

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J9/24

CPC分类号： H01L27/322 ,  H01L27/3244

摘要： A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display.

摘要翻译： 一种全色有源矩阵有机发光显示器，包括透明基板，位于基板上表面的滤色器，形成在滤色器上表面上的间隔层，金属氧化物薄膜晶体管背板 间隔层和限定像素阵列，以及形成在背板上的单色有机发光器件的阵列，并被定位成以全色的方式通过背板，间隔层，滤色器和衬底向下发光。 显示。

公开(公告)号：US07977151B2

公开(公告)日：2011-07-12

申请号：US12427200

申请日：2009-04-21

申请人： Chan-Long Shieh ,  Gang Yu

发明人： Chan-Long Shieh ,  Gang Yu

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969

摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

摘要翻译： 在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料， 导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。