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    II-VI compound semiconductor crystal and photoelectric conversion device
    81.
    发明申请
    II-VI compound semiconductor crystal and photoelectric conversion device 有权
    II-VI化合物半导体晶体和光电转换器件

    公开(公告)号：US20050189553A1

    公开(公告)日：2005-09-01

    申请号：US11115182

    申请日：2005-04-27

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Song-Bek Che ,  Kenji Sato

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Song-Bek Che ,  Kenji Sato

    IPC分类号： H01L31/0296 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01L29/22

    CPC分类号： H01L33/28 ,  H01L31/0296

    摘要： Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of the n-type contact layer, and to control the conductivity type in a relatively easy manner. Moreover, formation of a CdSe/ZnTe superlattice layer or a ZnCdSeTe-graded layer between the contact layer and an electrode can prevent electric resistance from being increased due to difference in the energy gaps. Since CdSe and ZnTe, composing the CdSe/ZnTe superlattice or ZnCdSeTe composition-graded layer, have relatively close lattice constants, formation thereof is less likely to adversely affect the crystallinity of the semiconductor crystal, which is advantageous in obtaining the semiconductor crystal with an excellent quality.

    摘要翻译： 由于ZnTe基化合物半导体晶体被设计成在ZnTe基化合物半导体层上具有n型接触层，该n型接触层包括彼此生长的具有n型CdSe和n型ZnTe的超晶格层，或者 ZnCdSeTe梯度层，可以提高n型接触层的载流子浓度，并以相对容易的方式控制导电类型。 此外，在接触层和电极之间形成CdSe / ZnTe超晶格层或ZnCdSeTe梯度层可以防止由于能隙的差异而导致的电阻增加。 由于构成CdSe / ZnTe超晶格或ZnCdSeTe组成梯度层的CdSe和ZnTe具有相对较近的晶格常数，所以其形成不太可能不利地影响半导体晶体的结晶度，这有利于获得具有优异的半导体晶体 质量。

    II-VI compound semiconductor crystal
    82.
    发明授权
    II-VI compound semiconductor crystal 有权
    II-VI化合物半导体晶体

    公开(公告)号：US06933519B2

    公开(公告)日：2005-08-23

    申请号：US10381880

    申请日：2002-08-02

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Song-Bek Che ,  Kenji Sato

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Song-Bek Che ,  Kenji Sato

    IPC分类号： H01L31/0296 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01L29/06

    CPC分类号： H01L33/28 ,  H01L31/0296

    摘要： The present invention relates to a II-VI compound semiconductor crystal comprising an n-type contact layer which includes a superlattice layer comprising n-type CdSe and n-type ZnTe stacked with each other, on a ZnTe-base compound semiconductor layer; a A II-VI compound semiconductor crystal comprising an n-type contact layer which includes an n-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varies, on a ZnTe-base compound semiconductor layer; a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a superlattice layer comprising p-type CdSe and p-type ZnTe stacked with each other, on a CdSe-base compound semiconductor layer; and a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a p-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varied, on a CdSe-base compound semiconductor layer.

    摘要翻译： 本发明涉及包含n型接触层的II-VI族化合物半导体晶体，所述n型接触层包括在ZnTe基化合物半导体层上彼此堆叠的包含n型CdSe和n型ZnTe的超晶格层; 包括在ZnTe基化合物半导体层上包含Zn，Cd，Se和Te的组成逐渐变化的n型ZnCdSeTe组成梯度层的n型接触层的A II-VI化合物半导体晶体; 包括p型接触层的II-VI族化合物半导体晶体，其包含在CdSe基化合物半导体层上彼此堆叠的包含p型CdSe和p型ZnTe的超晶格层; 以及包含在CdSe基化合物半导体层上包含Zn，Cd，Se和Te的组成逐渐变化的p型ZnCdSeTe组成分级层的p型接触层的II-VI族化合物半导体晶体。

    Method for manufacturing surface-conductive electron beam source device
    83.
    发明授权
    Method for manufacturing surface-conductive electron beam source device 失效
    表面导电电子束源装置的制造方法

    公开(公告)号：US5597338A

    公开(公告)日：1997-01-28

    申请号：US532545

    申请日：1995-09-25

    申请人： Kumi Iwai ,  Ichiro Nomura ,  Tetsuya Kaneko

    发明人： Kumi Iwai ,  Ichiro Nomura ,  Tetsuya Kaneko

    IPC分类号： H01J9/02 ,  H01J9/00

    CPC分类号： H01J9/027 ,  H01J2201/3165

    摘要： A surface-conductive electron beam source having a fine particle film which is formed by repeating a film formation step of applying and calcining an organic metal compound solution several times. A pair of electrodes come in contact with the fine particle film, and an electron-emitting portion is formed at a part of the fine particle film. There is also a display device having the electron beam source, a modulation means for modulating an electron beam emitted from the electron beam source in accordance with an information signal, and an image-forming member for forming an image by the irradiation of the electron beam.

    摘要翻译： 具有细颗粒膜的表面传导电子束源，其通过重复施加和煅烧有机金属化合物溶液数次的成膜步骤而形成。 一对电极与细颗粒膜接触，并且在微粒膜的一部分形成电子发射部分。 还有一种具有电子束源的显示装置，用于根据信息信号调制从电子束源发射的电子束的调制装置和用于通过电子束的照射形成图像的图像形成部件 。

    Radiation generating apparatus and radiation imaging apparatus
    84.
    发明授权
    Radiation generating apparatus and radiation imaging apparatus 有权
    辐射发生装置和放射线成像装置

    公开(公告)号：US09552956B2

    公开(公告)日：2017-01-24

    申请号：US14131859

    申请日：2012-07-24

    申请人： Yoshihiro Yanagisawa ,  Shuji Aoki ,  Miki Tamura ,  Kazuyuki Ueda ,  Ichiro Nomura

    发明人： Yoshihiro Yanagisawa ,  Shuji Aoki ,  Miki Tamura ,  Kazuyuki Ueda ,  Ichiro Nomura

    IPC分类号： H01J35/12 ,  H05G1/02 ,  H05G1/04 ,  G01N23/04 ,  H01J35/16

    CPC分类号： H01J35/12 ,  G01N23/04 ,  H01J35/16 ,  H01J2235/122 ,  H01J2235/166 ,  H01J2235/186 ,  H05G1/025 ,  H05G1/04

    摘要： A radiation generating apparatus includes: an envelope 1 having a first window 2 through which a radiation is transmitted; and a radiation tube 10 being held within the envelope 1, and having a second window 15 which is arranged in opposition to the first window 2, and through which the radiation is transmitted; and a radiation shielding member 16 thermally connected to the second window 15, having a radiation transmitting hole 21 arranged in communication with the second window 15, and having a protruding portion protruding from the second window 15 toward the first window 2. A thermally conductive member 17 having a higher thermal conductivity rather than that of the radiation shielding member 16 is connected to the protruding portion of the radiation shielding member 16. The radiation generating apparatus can shield an unnecessary radiation and cool a target with a simple structure and is entirely reduced in weight.

    摘要翻译： 辐射发生装置包括：具有第一窗口2的信封1，通过该第一窗口发射辐射; 并且辐射管10保持在外壳1内，并且具有与第一窗口2相对布置的第二窗口15，辐射通过该第二窗口15被传送; 以及与第二窗口15热连接的辐射屏蔽构件16，具有与第二窗口15连通布置的辐射透射孔21，并且具有从第二窗口15朝向第一窗口2突出的突出部分。导热构件 17具有较高的导热率而不是辐射屏蔽构件16的导热系数17连接到辐射屏蔽构件16的突出部分。辐射发生装置可以屏蔽不需要的辐射并以简单的结构冷却目标，并且完全减少 重量。

    Radiation generating tube and radiation imaging apparatus using the same
    85.
    发明授权
    Radiation generating tube and radiation imaging apparatus using the same 有权
    辐射发生管和使用其的放射线成像装置

    公开(公告)号：US09251995B2

    公开(公告)日：2016-02-02

    申请号：US14127647

    申请日：2012-07-17

    申请人： Takao Ogura ,  Kazuyuki Ueda ,  Yasue Sato ,  Ichiro Nomura

    发明人： Takao Ogura ,  Kazuyuki Ueda ,  Yasue Sato ,  Ichiro Nomura

    IPC分类号： H01J35/00 ,  H01J35/16 ,  H01J35/08 ,  H01J35/18 ,  G01N23/04

    CPC分类号： H01J35/165 ,  G01N23/04 ,  H01J35/08 ,  H01J35/16 ,  H01J35/18 ,  H01J2235/087 ,  H01J2235/166 ,  H01J2235/186

    摘要： A radiation generating tube 1 includes: an electron emitting source 3; a target 9 spaced from the electron emitting source 3, for generating radiation 11 responsive to irradiation with an electron beam from the electron emitting source 3; and a tubular shielding member 10 having an electron passing hole 8, wherein the electron passing hole 8 has an electron incident aperture at one end thereof and has a target supporting surface 9b supporting the target 9 at the other end thereof, wherein the target supporting surface 9b is connected through a brazing filler 14 to a periphery of a surface of the target at a side on which the electron is incident, and an opening size of the other end of the electron passing hole 8 is larger than an opening size of the electron incident aperture at the one end thereof.

    摘要翻译： 辐射发生管1包括：电子发射源3; 与电子发射源3间隔开的靶9，用于响应于来自电子发射源3的电子束的照射产生辐射11; 和具有电子通过孔8的管状屏蔽构件10，其中电子通过孔8的一端具有电子入射孔，并且在其另一端具有支撑靶9的靶支撑表面9b，其中目标支撑表面 9b通过钎焊料14连接到目标的表面的电子入射侧的周边，并且电子通过孔8的另一端的开口尺寸大于电子的开口尺寸 入射孔在其一端。

    RADIATION GENERATING TUBE AND RADIATION IMAGING APPARATUS USING THE SAME
    87.
    发明申请
    RADIATION GENERATING TUBE AND RADIATION IMAGING APPARATUS USING THE SAME 有权
    使用辐射发生管和辐射成像装置

    公开(公告)号：US20140140480A1

    公开(公告)日：2014-05-22

    申请号：US14127647

    申请日：2012-07-17

    申请人： Takao Ogura ,  Kazuyuki Ueda ,  Yasue Sato ,  Ichiro Nomura

    发明人： Takao Ogura ,  Kazuyuki Ueda ,  Yasue Sato ,  Ichiro Nomura

    IPC分类号： H01J35/16 ,  G01N23/04

    CPC分类号： H01J35/165 ,  G01N23/04 ,  H01J35/08 ,  H01J35/16 ,  H01J35/18 ,  H01J2235/087 ,  H01J2235/166 ,  H01J2235/186

    摘要： A radiation generating tube 1 includes: an electron emitting source 3; a target 9 spaced from the electron emitting source 3, for generating a radiation 11 responsive to an irradiation with an electron emitted from the electron emitting source 3; and a tubular shielding member 10 having an electron passing hole 8, wherein the electron passing hole 8 has an electron incident aperture at one end thereof and has a target supporting surface 9b supporting the target 9 at the other end thereof, wherein the target supporting surface 9b is connected through a brazing filler 14 to a periphery of a surface of the target at a side on which the electron is incident, and an opening size of the other end of the electron passing hole 8 is larger than an opening size of the electron incident aperture at the one end thereof.

    摘要翻译： 辐射发生管1包括：电子发射源3; 与电子发射源3间隔开的靶9，用于产生响应于从电子发射源3发射的电子的照射的辐射11; 和具有电子通过孔8的管状屏蔽构件10，其中电子通过孔8的一端具有电子入射孔，并且在其另一端具有支撑靶9的靶支撑表面9b，其中目标支撑表面 9b通过钎焊料14连接到目标的表面的电子入射侧的周边，并且电子通过孔8的另一端的开口尺寸大于电子的开口尺寸 入射孔在其一端。

    X-RAY GENERATING APPARATUS AND METHOD OF DRIVING X-RAY TUBE
    89.
    发明申请
    X-RAY GENERATING APPARATUS AND METHOD OF DRIVING X-RAY TUBE 有权
    X射线发生装置和驱动X射线管的方法

    公开(公告)号：US20120121069A1

    公开(公告)日：2012-05-17

    申请号：US13286352

    申请日：2011-11-01

    申请人： Shuji Aoki ,  Takao Ogura ,  Yasue Sato ,  Miki Tamura ,  Kazuyuki Ueda ,  Ichiro Nomura

    发明人： Shuji Aoki ,  Takao Ogura ,  Yasue Sato ,  Miki Tamura ,  Kazuyuki Ueda ,  Ichiro Nomura

    IPC分类号： H05G1/64 ,  H05G1/12

    CPC分类号： H05G1/12 ,  H01J35/045 ,  H05G1/20

    摘要： An inverter circuit is shared by respective drive circuits that supply a predetermined voltage to a lens electrode and a grid electrode, or to a lens electrode and a cathode electrode. A DC voltage obtained by full-wave rectifying a pulse train output from the inverter circuit is supplied to the lens electrode, a DC voltage obtained by half-wave rectifying a pulse train output from the inverter circuit is supplied to the grid electrode or cathode electrode. At times of a first operation and a last operation of the inverter circuit during a period of generating X-rays, operations of the inverter circuit are controlled such that a trans circuit outputs a negative polarity voltage to the full-wave rectifying circuit and the half-wave rectifying circuit, respectively.

    摘要翻译： 逆变器电路由向透镜电极和栅电极提供预定电压的相应驱动电路或透镜电极和阴极电极共享。 通过对从逆变器电路输出的脉冲串进行全波整流而获得的直流电压被提供给透镜电极，通过对从逆变器电路输出的脉冲串进行半波整流获得的直流电压被提供给栅电极或阴极电极 。 在产生X射线的时段期间的逆变器电路的第一次操作和最后一次操作时，控制逆变器电路的操作，使得反相电路向全波整流电路输出负极性电压，半 波整流电路。