System for adjusting radiation target sites dynamically according to moving states of target object and for creating lookup table of the moving states

    公开(公告)号:US11504551B2

    公开(公告)日:2022-11-22

    申请号:US15931549

    申请日:2020-05-13

    Abstract: A system for adjusting radiation target sites dynamically according to the moving states of a target object and for creating a lookup table of the moving states includes a detection chip, a radiation generation device, and a lookup table. The detection chip can be fixed on the target object to detect the current moving state of the target object. The detection chip or the radiation generation device, both configured for wireless signal transmission to each other, can activate or deactivate the radiation emitters of the radiation generation device individually according to the current moving state of the target object and the contents of the lookup table. As the system uses wireless transmission, and the lookup table has recorded the working state of each radiation emitter in each moving state of the target object, radiotherapy can be performed without a large number of tubes or sensors.

    Party popper
    82.
    发明授权

    公开(公告)号:US10603601B2

    公开(公告)日:2020-03-31

    申请号:US16424502

    申请日:2019-05-29

    Applicant: Yu-Jen Wang

    Inventor: Yu-Jen Wang

    Abstract: A party popper contains: a body which includes two first openings defined on two ends of the body respectively. A flexible push portion is mounted on an end of the body, and a launchable cylinder is slidably accommodated in the body. The body includes a surrounding rib fitted thereon, and the flexible push portion is configured to drive the launchable cylinder to slide until the launchable cylinder is stopped by the surrounding rib. Multiple launchable objects are launched from the launchable cylinder inertially, thus launching the multiple launchable objects safely.

    Storage element for STT MRAM applications
    84.
    发明授权
    Storage element for STT MRAM applications 有权
    STT MRAM应用的存储元件

    公开(公告)号:US08921961B2

    公开(公告)日:2014-12-30

    申请号:US13617432

    申请日:2012-09-14

    CPC classification number: H01L43/12 G11C11/161 H01L43/08

    Abstract: An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

    Abstract translation: 描述了改进的PMA STT MTJ存储元件及其形成方法。 通过在存储层和盖层之间插入合适的氧化物层,获得改进的PMA性质,增加更大的Eb / kT热因子的可能性以及较大的MR。 另一个重要的优点是更好的与高处理温度的兼容性,有可能促进与CMOS的集成。

    Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
    85.
    发明申请
    Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM 有权
    STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁(SAF)结构

    公开(公告)号:US20140070341A1

    公开(公告)日:2014-03-13

    申请号:US13609780

    申请日:2012-09-11

    Abstract: A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.

    Abstract translation: 公开了一种用于自旋电子器件的合成反铁磁(SAF)结构,并具有AP2 /反铁磁(AF)耦合/ CoFeB配置。 SAF结构变薄以减少边缘(Ho)场,同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性(PMA),并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中,通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为(Co / Ni)4,CoFeB厚度为7.5埃时,Ho降至125Oe,Hc为1000Oe,平衡饱和磁化强度产物(Mst)= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB,其中FL2是具有固有PMA的铁磁层。

    Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications
    86.
    发明申请
    Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications 有权
    具有改进的垂直各向异性的工程磁性层,使用玻璃化剂进行自旋电子应用

    公开(公告)号:US20130221460A1

    公开(公告)日:2013-08-29

    申请号:US13548859

    申请日:2012-07-13

    CPC classification number: H01L43/08 H01L43/10

    Abstract: A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.

    Abstract translation: 公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件,其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量 磁性隧道结中的稳定性。 自由层可以是单层或复合物,并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶,但是在含有玻璃试剂的中间区域保持非晶形特征,提供退火温度小于中间区域的结晶温度。

    Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications
    87.
    发明申请
    Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications 有权
    具有改进的垂直各向异性的工程磁性层,使用玻璃化剂进行自旋电子应用

    公开(公告)号:US20130221459A1

    公开(公告)日:2013-08-29

    申请号:US13408555

    申请日:2012-02-29

    CPC classification number: H01L43/08 H01L43/10 H01L43/12

    Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

    Abstract translation: 公开了一种磁性元件,其中具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以增加磁性隧道结(MTJ)中的热稳定性。 自由层可以是单层或复合物,并且由一个或多个在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 结果,例如,CoFeB自由层沿着第一界面和第二界面选择性地结晶,但是在含有提供退火温度的玻璃试剂的中间区域中保持无定形特征小于中间区域的结晶温度。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

    Vibration-actuated micro mirror device

    公开(公告)号:US08325405B2

    公开(公告)日:2012-12-04

    申请号:US13450574

    申请日:2012-04-19

    CPC classification number: G02B26/0858 G02B26/101

    Abstract: The present invention provides a vibration-actuated micro mirror device comprising a substrate having a swinging frame and a reflection mirror, and a vibration part having a first and a second vibration structures coupled to the substrate, wherein the first vibration structure is driven to generate a first complex wave formed by a first and a second wave signals while the second vibration structure is driven to generate a second complex wave formed by a third and a fourth wave signals, and the first and the third wave signals are formed with the same frequency and phase while the second and the fourth wave signals are formed with the same frequency but opposite phases. The first and the second complex waves actuate the substrate such that the swinging frame is rotated about a first axis while the reflection mirror is rotated about a second axis.

    Swinging device and apparatus for detecting rotating status and information displaying device using the same
    89.
    发明授权
    Swinging device and apparatus for detecting rotating status and information displaying device using the same 有权
    用于检测旋转状态的摆动装置和装置以及使用其的信息显示装置

    公开(公告)号:US08223003B2

    公开(公告)日:2012-07-17

    申请号:US12631502

    申请日:2009-12-04

    CPC classification number: G01P3/16 B62J6/003 B62J6/06 B62J6/20 F03G7/08

    Abstract: The present disclosure provides a swinging device having a swinging mechanism disposed on an energy provider, wherein volume and shape of the swinging mechanism and a distance between the swinging mechanism and the energy provider are adjusted so as to control the ratio of the distance and a characteristic value corresponding to the swinging mechanism in a specific range such that the swinging mechanism is capable of resonating with respect to the rotation of the energy provider. The swinging mechanism is capable of detecting the rotating frequency of the energy provider as well as combining with a display unit which is capable of displaying information with respect to the rotating status or displaying image patterns controlled according to the rotating status.

    Abstract translation: 本公开提供了一种具有设置在能量提供者上的摆动机构的摆动装置,其中调节摆动机构的体积和形状以及摆动机构和能量提供者之间的距离,以便控制距离和特性的比率 相应于摆动机构的特定范围的值,使得摆动机构能够相对于能量提供者的旋转而谐振。 摆动机构能够检测能量提供者的旋转频率,以及与能够显示关于旋转状态的信息的显示单元或显示根据旋转状态控制的图像模式的组合。

    Vibration-actuated micro mirror device
    90.
    发明授权
    Vibration-actuated micro mirror device 有权
    振动微镜装置

    公开(公告)号:US08218214B2

    公开(公告)日:2012-07-10

    申请号:US12963024

    申请日:2010-12-08

    CPC classification number: G02B26/0858 G02B26/101

    Abstract: The present invention provides a vibration-actuated micro mirror device comprising a substrate having a swinging frame and a reflection mirror, and a vibration part having a first and a second vibration structures coupled to the substrate, wherein the first vibration structure is driven to generate a first complex wave formed by a first and a second wave signals while the second vibration structure is driven to generate a second complex wave formed by a third and a fourth wave signals, and the first and the third wave signals are formed with the same frequency and phase while the second and the fourth wave signals are formed with the same frequency but opposite phases. The first and the second complex waves actuate the substrate such that the swinging frame is rotated about a first axis while the reflection mirror is rotated about a second axis.

    Abstract translation: 本发明提供了一种振动致动的微反射镜装置,其包括具有摆动框架和反射镜的基板以及具有联接到基板的第一和第二振动结构的振动部分,其中第一振动结构被驱动以产生 第一复波由第一和第二波信号形成,而第二振动结构被驱动以产生由第三和第四波信号形成的第二复波,并且第一和第三波信号以相同频率形成,并且 而第二和第四波信号以相同频率但相反的相位形成。 第一和第二复合波激活基板,使得摆动框架围绕第一轴线旋转,同时反射镜绕第二轴线旋转。

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