公开(公告)号：US20030073260A1

公开(公告)日：2003-04-17

申请号：US10246011

申请日：2002-09-17

Inventor： Thomas N. Corso

IPC: H01L021/00

CPC classification number: B81C1/00087 ,  B81B2201/058 ,  B81C2201/0142

Abstract: A method for fabricating a nozzle of microchip-based electrospray device is disclosed. The method includes using a primary mask to accurately define the nozzle feature including the annulus and the through hole of the electrospray device. A secondary masking step is conducted to pattern the through channel (typical the photoresist would serve as the secondary mask), followed by the defining and etching of the primary mask containing the full nozzle feature. The secondary mask serves to selectively mask given areas of the primary mask for subsequent etching. The through hole feature of the secondary mask aligns over the already patterned primary mask through channel, except that the secondary mask contains a slightly larger through channel diameter. This serves to mask off the annulus, but allowing the silicon through channel to be exposed for etching.

Abstract translation: 公开了一种用于制造基于微芯片的电喷雾装置的喷嘴的方法。 该方法包括使用主掩模来精确地限定包括电喷雾装置的环形部分和通孔的喷嘴特征。 进行二次掩模步骤以对穿通通道进行图案化（典型地，光致抗蚀剂将用作辅助掩模），然后限定和蚀刻含有全喷嘴特征的主掩模。 辅助掩模用于选择性地掩蔽初级掩模的给定区域用于随后的蚀刻。 辅助掩模的通孔特征通过通道对准已经图案化的初级掩模，不同之处在于次要掩模包含稍大的通道直径。 这用于掩盖环形，但允许硅通过沟道暴露以进行蚀刻。

公开(公告)号：US5980762A

公开(公告)日：1999-11-09

申请号：US806150

申请日：1997-02-25

Applicant: Hiroshi Otani ,  Masahiro Tsugai

Inventor： Hiroshi Otani ,  Masahiro Tsugai

IPC: H01L29/84 ,  B81B1/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/306 ,  H01L21/302

CPC classification number: B81C1/00626 ,  G01P15/0802 ,  G01P15/125 ,  H01L21/30608 ,  B81B2201/0235 ,  B81C2201/0133 ,  B81C2201/0142

Abstract: A method of micromachining a silicon wafer that simultaneously forms narrow gaps having a width of 10 .mu.m or less and wider gap portions using an anistropic etching solution. The etching solution contains KOH in a concentration of 35% or less and the penetration etching is carried out such that the etching of the opposing walls and the face of the silicon wafer occur at the same rate. A method of manufacturing a capacitance-type acceleration detector in a silicon wafer using the aforementioned etching method.

Abstract translation: 一种微晶加工硅晶片的方法，其同时形成宽度为10μm或更小的窄间隙，并且使用有机蚀刻溶液形成较宽的间隙部分。 蚀刻溶液含有浓度为35％以下的KOH，进行贯通蚀刻，使得相对的壁和硅晶片的表面以相同的速率进行蚀刻。 使用上述蚀刻方法制造硅晶片中的电容式加速度检测器的方法。

公开(公告)号：US5728253A

公开(公告)日：1998-03-17

申请号：US315837

申请日：1994-09-30

Applicant: Susumu Saito ,  Kazuo Eguchi

Inventor： Susumu Saito ,  Kazuo Eguchi

IPC: G01N21/68 ,  H01J37/32 ,  H05H1/00 ,  G01N21/00

CPC classification number: H01J37/32935 ,  B81C1/00587 ,  B81C99/0065 ,  G01N21/68 ,  H01J37/32963 ,  H01J37/3299 ,  B81C2201/0142

Abstract: Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C.sub.2 in the plasma, by optical detecting means, and determining the end point of the plasma process from the emission intensity of the emission spectrum detected by the optical detector. The apparatus has a process chamber, a pair of electrodes, a light-collecting device, an optical detector, and a determining device. The chamber has a monitor window. The electrodes are located in the process chamber. The first electrode is used to support the object. A high-frequency power is supplied between the electrodes to change a process gas into plasma. The light-collecting device collects the light from the plasma through the monitor window. The optical detector detects an emission spectrum from the light collected. The determining device determines the end point of the plasma process from the emission intensity of the emission spectrum detected. The monitor window is secured to the distal end of a cylindrical member protruding from the chamber. The member has a narrow gas passage for trapping a gas generated by the plasma process.