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公开(公告)号：US20140238133A1
公开(公告)日：2014-08-28
申请号：US14350807
申请日：2012-11-12
发明人： Masami Kishiro
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01L9/12 , G01P15/18 , G01P2015/084 , G01R27/2605
摘要： A capacitance detection circuit inhibits noise. The capacitance detection circuit detects a change in capacitance between a pair of electrodes of a physical quantity sensor, with these electrodes generating the change in capacitance in response to a change in physical quantity. The capacitance detection circuit has a carrier signal generating circuit that supplies a carrier signal to one of the electrodes, an operational amplifier that has an inverting input terminal to which the other one of the electrodes is input, a dummy capacity that is connected in parallel to the pair of electrodes, and a carrier signal conditioning circuit that inverts a phase of a carrier signal supplied from the carrier signal generating circuit to the dummy capacity and adjusts a gain to inhibit the dummy capacity.
摘要翻译： 电容检测电路抑制噪声。 电容检测电路检测物理量传感器的一对电极之间的电容变化，这些电极响应于物理量的变化而产生电容的变化。 电容检测电路具有载波信号发生电路，其向一个电极提供载波信号，具有输入另一个电极的反相输入端的运算放大器，并联连接的虚拟容量 一对电极和载波信号调理电路，其将从载波信号发生电路提供的载波信号的相位反转到虚拟容量，并调整增益以抑制虚拟容量。
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公开(公告)号：US20170243962A1
公开(公告)日：2017-08-24
申请号：US15390680
申请日：2016-12-26
发明人： Hong-fei LU
IPC分类号： H01L29/739 , H01L29/66 , H01L29/08 , H01L29/417 , H01L29/06 , H01L29/10
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/0649 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/417 , H01L29/41708 , H01L29/66333 , H01L29/66348 , H01L29/7397
摘要： An RB-IGBT is provided that has a new emitter trench structure with improved breakdown voltage achieved by improving the electrical field distribution of the drift region. The RB-IGBT includes an isolation region having a first conductivity type on a side surface of a semiconductor substrate. The semiconductor substrate includes a drift region having a second conductivity type; a collector region having the first conductivity type and provided farther downward than the drift region; and an emitter trench portion provided extending to the drift region in a thickness direction from a front surface to a back surface of the semiconductor substrate. The emitter trench portion includes a trench electrode electrically connected to an emitter electrode provided above the semiconductor substrate; an upper trench insulating film directly contacting a bottom portion and side portions of the trench electrode; and a lower trench insulating film provided below the upper trench insulating film.
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公开(公告)号：US20240363620A1
公开(公告)日：2024-10-31
申请号：US18592013
申请日：2024-02-29
发明人： Kiminori TANAKA , Masaharu YAMAJI
IPC分类号： H01L27/02
CPC分类号： H01L27/0274
摘要： A semiconductor device includes: a semiconductor base body of a first conductivity-type; a first well region of a second conductivity-type provided at an upper part of the semiconductor base body; a protection element provided in the first well region and including transistors arranged at several stages each including a carrier supply region and a gate electrode mutually short-circuited; a VCC pad provided on a top surface side of the semiconductor base body; and an AGND pad provided on the top surface side of the semiconductor base body, wherein a carrier reception region of the transistor at a frontmost stage included in the protection element is connected to the VCC pad, and the carrier supply region and the gate electrode of the transistor at a rearmost stage included in the protection element are connected to the AGND pad via a first wire.
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公开(公告)号：US20240363507A1
公开(公告)日：2024-10-31
申请号：US18582566
申请日：2024-02-20
发明人： Hayato NAKANO
IPC分类号： H01L23/498 , H01L21/66
CPC分类号： H01L23/49811 , H01L22/12 , H01L22/32 , H01L23/49838
摘要： Provided is a semiconductor device including: a temperature sensing portion provided above a semiconductor substrate; a temperature sensing wiring portion electrically connected to the temperature sensing portion; and a protective film including a temperature sensing protective film provided above the temperature sensing portion and a first wiring protective film provided above the temperature sensing wiring portion, where the first wiring protective film includes: a first region adjacent to the temperature sensing protective film; and a second region provided more spaced apart from the temperature sensing protective film than the first region and having a width narrower than that of the first region.
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公开(公告)号：USD1048794S1
公开(公告)日：2024-10-29
申请号：US29887141
申请日：2023-03-17
设计人： Junsuke Shimada , Gou Nagai
摘要： FIG. 1 is a front, top and right-side perspective view of a beverage dispenser showing our new design;
FIG. 2 is a front, top and left-side perspective view thereof;
FIG. 3 is a front elevational view thereof;
FIG. 4 is a rear elevational view thereof;
FIG. 5 is a left-side elevational view thereof;
FIG. 6 is a right-side elevational view thereof;
FIG. 7 is a top plan view thereof; and,
FIG. 8 is a bottom plan view thereof.
The oblique shade lines illustrate a transparent surface.-
公开(公告)号：US12132392B2
公开(公告)日：2024-10-29
申请号：US17332218
申请日：2021-05-27
发明人： Akira Nakamori
CPC分类号： H02M1/088 , H03K17/165 , H03K2217/0027
摘要： A power conversion device including a semiconductor switching element having a control electrode terminal and two main electrode terminals and configured to control a current flowing between the two main electrodes by a drive signal applied to the control electrode terminal; and a drive circuit configured to generate the drive signal in synchronization with an input signal and to turn on/off the semiconductor switching element by the drive signal. The drive circuit is configured to detect the current flowing between the two main electrode terminals of the semiconductor switching element at a timing at which the semiconductor switching element is turned off, and to adjust a drive capacity.
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公开(公告)号：US12132084B2
公开(公告)日：2024-10-29
申请号：US17706879
申请日：2022-03-29
发明人： Yohei Kagoyama
CPC分类号： H01L29/1608 , H01L21/02378 , H01L21/02529 , H01L29/66068 , H01L29/7802
摘要： A type, size, and location of a crystal defect of an epitaxial layer of a semiconductor wafer containing silicon carbide are detected from a PL image by crystal defect inspection equipment. Detected crystal defects include a triangular polymorph stacking fault generated in the epitaxial layer during epitaxial growth and high-density BPDs extending from the stacking fault and present bundled between the stacking fault and a perfect crystal. Next, a chip region free of the triangular polymorph stacking fault and free of the high-density BPD in a specified area that is in the termination region and is located closer to a chip center than is a specified position is identified as a conforming product. A semiconductor chip set as a conforming product may contain high-density BPDs outside the specified area.
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公开(公告)号：US20240348158A1
公开(公告)日：2024-10-17
申请号：US18751670
申请日：2024-06-24
发明人： Masami KISHIRO
摘要： A power supply circuit includes: an input terminal that receives an input voltage; an inductor; a switching circuit electrically connected to the inductor and configured to switch between a storing period for storing energy in the inductor and a discharge period for discharging the energy stored in the inductor; an output terminal that receives a current from the inductor in the storing and discharging periods; a transistor electrically connected to the inductor and serving as a portion of a path of a current flowing to the inductor in the storing and discharging periods. The output terminal outputs a voltage based on the storing period, the discharging period, and the input voltage. The transistor stops a switching operation that is used to switch between the storing and discharging periods, by preventing the current flowing to the inductor, in a signal processing period in which a signal processing circuit is processing a signal.
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公开(公告)号：US20240339333A1
公开(公告)日：2024-10-10
申请号：US18731181
申请日：2024-05-31
发明人： Noriaki NOJI , Naoko KODAMA , Kazuhiro KITAHARA , Tatsuya HASHIMOTO , Ryota KATAOKA , Shunya HAYASHIDA
IPC分类号： H01L21/3213 , H01L21/285
CPC分类号： H01L21/32139 , H01L21/28518
摘要： A method of manufacturing a semiconductor device includes forming a surface structure having a MOS structure in a semiconductor substrate; forming an interlayer insulating partially covering the surface structure; forming an aluminum alloy film in contact with the surface structure and covering an entire area where the surface structure, including the interlayer insulating film, is formed; forming a resist film on the surface of the aluminum alloy film so as to have a thickness that covers the surface of the aluminum alloy while exposing a convex-shaped defect formed at the surface of the aluminum alloy film; patterning the aluminum alloy film using the resist film as a mask; and removing the resist film.
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公开(公告)号：US20240332161A1
公开(公告)日：2024-10-03
申请号：US18605768
申请日：2024-03-14
发明人： Sho NAKAGAWA , Shinji YAMASHINA
CPC分类号： H01L23/52 , G01R19/0046
摘要： There is provided an semiconductor device comprising: a main element having an upper-surface electrode; a first proximal wiring line connected to the upper-surface electrode; and a first sense wiring line that transmits potential at the first sense position on the upper-surface electrode, wherein the first proximal wiring line is connected to the first proximal position on the upper-surface electrode, and on the upper-surface electrode, a first inter-wiring line distance that is from the first sense position to the first proximal position is different from a half of a maximum distance that is from the first proximal position to an end of the upper-surface electrode.
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