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公开(公告)号：US20230027894A1
公开(公告)日：2023-01-26
申请号：US17746934
申请日：2022-05-17
IPC分类号： H01L23/00 , H01L21/78 , H01L23/544 , H01L23/58
摘要： Provided is a semiconductor device including: a semiconductor substrate provided with an active portion and an edge termination structure portion surrounding the active portion; an interlayer dielectric film provided above the semiconductor substrate; a protective film provided above the interlayer dielectric film; and a protruding portion provided farther from the active portion than the edge termination structure portion and protruding further than the interlayer dielectric film. The protruding portion is not covered with the protective film. The protective film is provided closer to the active portion than the protruding portion.
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公开(公告)号：US20200294931A1
公开(公告)日：2020-09-17
申请号：US16886168
申请日：2020-05-28
发明人： Naoko KODAMA
IPC分类号： H01L23/544
摘要： A back alignment mark on a surface of a semiconductor substrate is detected and a resist mask patterned into a circuit pattern corresponding to a surface element structure is formed on a back of the semiconductor substrate. Detection of the back alignment mark is performed by using a detector opposing the back of the semiconductor substrate and measuring contrast based on the intensity of reflected infrared light irradiated from the back of the semiconductor substrate. The back alignment mark is configured by a step formed by the surface of the semiconductor substrate and bottoms of trenches formed from the surface of the semiconductor substrate. A polysilicon film is embedded in the trenches. The back alignment mark has, for example, a cross-shaped planar layout in which three or more trenches are disposed in a direction parallel to the surface of the semiconductor substrate.
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公开(公告)号：US20210272797A1
公开(公告)日：2021-09-02
申请号：US17161908
申请日：2021-01-29
发明人： Naoko KODAMA
IPC分类号： H01L21/02 , H01L21/265 , H01L21/311 , H01L29/06 , H01L29/66
摘要： A method of manufacturing a semiconductor device, including preparing a semiconductor wafer having first and second main surfaces opposite to each other, forming a photoresist film on the first main surface of the semiconductor wafer, forming a plurality of openings at predetermined positions in the photoresist film, cleaning the semiconductor wafer with water after the openings are formed, drying the semiconductor wafer by rotating the semiconductor wafer around a center axis that is orthogonal to the first main surface of the semiconductor wafer, to thereby generate a centrifugal force to cause the water that is left in the openings of the photoresist film to fly off the semiconductor wafer, and ion-implanting a predetermined impurity by a predetermined acceleration energy from the first main surface of the semiconductor wafer, using the photoresist film as a mask, after the drying. The drying process includes setting a rotational speed of the semiconductor wafer to be at most an upper limit value.
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公开(公告)号：US20190206803A1
公开(公告)日：2019-07-04
申请号：US16166529
申请日：2018-10-22
发明人： Naoko KODAMA
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , H01L2223/54426 , H01L2223/54433 , H01L2223/54453
摘要： A back alignment mark on a surface of a semiconductor substrate is detected and a resist mask patterned into a circuit pattern corresponding to a surface element structure is formed on a back of the semiconductor substrate. Detection of the back alignment mark is performed by using a detector opposing the back of the semiconductor substrate and measuring contrast based on the intensity of reflected infrared light irradiated from the back of the semiconductor substrate. The back alignment mark is configured by a step formed by the surface of the semiconductor substrate and bottoms of trenches formed from the surface of the semiconductor substrate. A polysilicon film is embedded in the trenches. The back alignment mark has, for example, a cross-shaped planar layout in which three or more trenches are disposed in a direction parallel to the surface of the semiconductor substrate.
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公开(公告)号：US20220277959A1
公开(公告)日：2022-09-01
申请号：US17748006
申请日：2022-05-18
发明人： Yasunori AGATA , Takashi YOSHIMURA , Hiroshi TAKISHITA , Misaki MEGURO , Naoko KODAMA , Yoshihiro IKURA , Seiji NOGUCHI , Yuichi HARADA , Yosuke SAKURAI
IPC分类号： H01L21/22 , H01L21/268 , H01L21/265 , H01L27/06 , H01L29/06 , H01L29/861 , H01L29/32 , H01L29/40 , H01L29/66 , H01L29/739 , H01L29/10
摘要： A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.
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公开(公告)号：US20200258998A1
公开(公告)日：2020-08-13
申请号：US16859637
申请日：2020-04-27
发明人： Naoko KODAMA
摘要： A method of manufacturing a semiconductor device that includes a semiconductor element. The method includes the steps of providing a semiconductor substrate of a first conductivity type, forming an element structure of the semiconductor element, at a first main surface of the semiconductor substrate, forming a first protective film at a second main surface of the semiconductor substrate, implanting ions in the semiconductor substrate from the second main surface having the first protective film formed thereon, and removing the first protective film.
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公开(公告)号：US20180269063A1
公开(公告)日：2018-09-20
申请号：US15883393
申请日：2018-01-30
发明人： Naoko KODAMA
IPC分类号： H01L21/266 , H01L29/66
摘要： A method of manufacturing a semiconductor device, including providing a semiconductor wafer, forming a photoresist film on a main surface of the semiconductor wafer, forming a first mask pattern and a second mask pattern on the photoresist film, selectively removing portions of the photoresist film according to the first and second mask patterns, to respectively form a first opening and a second opening in the photoresist film, a position of the second opening differing from that of the first opening, and performing ion implantation of an impurity into the semiconductor wafer, using the photoresist film having the first and second openings formed therein as a mask.
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公开(公告)号：US20220140091A1
公开(公告)日：2022-05-05
申请号：US17577361
申请日：2022-01-17
发明人： Takashi YOSHIMURA , Yuichi ONOZAWA , Hiroshi TAKISHITA , Misaki MEGURO , Motoyoshi KUBOUCHI , Naoko KODAMA
IPC分类号： H01L29/36 , H01L21/22 , H01L21/265 , H01L21/322 , H01L29/06 , H01L29/12 , H01L29/739 , H01L29/78 , H01L29/861
摘要： Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.
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公开(公告)号：US20210082702A1
公开(公告)日：2021-03-18
申请号：US17033925
申请日：2020-09-28
发明人： Yasunori AGATA , Takashi YOSHIMURA , Hiroshi TAKISHITA , Misaki MEGURO , Naoko KODAMA , Yoshihiro IKURA , Seiji NOGUCHI , Yuichi HARADA , Yosuke SAKURAI
IPC分类号： H01L21/22 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/32 , H01L29/40 , H01L29/739 , H01L29/861 , H01L21/265 , H01L21/268 , H01L29/66
摘要： A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.
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公开(公告)号：US20200058596A1
公开(公告)日：2020-02-20
申请号：US16663102
申请日：2019-10-24
发明人： Naoko KODAMA
IPC分类号： H01L23/544
摘要： A back alignment mark on a surface of a semiconductor substrate is detected and a resist mask patterned into a circuit pattern corresponding to a surface element structure is formed on a back of the semiconductor substrate. Detection of the back alignment mark is performed by using a detector opposing the back of the semiconductor substrate and measuring contrast based on the intensity of reflected infrared light irradiated from the back of the semiconductor substrate. The back alignment mark is configured by a step formed by the surface of the semiconductor substrate and bottoms of trenches formed from the surface of the semiconductor substrate. A polysilicon film is embedded in the trenches. The back alignment mark has, for example, a cross-shaped planar layout in which three or more trenches are disposed in a direction parallel to the surface of the semiconductor substrate.
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