公开(公告)号：US20210398812A1

公开(公告)日：2021-12-23

申请号：US17463164

申请日：2021-08-31

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Naoko KODAMA ,  Motoyoshi KUBOUCHI

IPC: H01L21/266 ,  H01L29/66 ,  H01L21/263 ,  H01L21/265 ,  H01L29/739

Abstract: A method of manufacturing a semiconductor device, including preparing a semiconductor substrate having a main surface, forming a device element structure on the main surface, forming a protective film on the main surface of the semiconductor substrate to protect the device element structure, the protective film having an opening therein, forming at least one material film in a predetermined pattern on the main surface of the semiconductor substrate and in the opening of the protective film, the at least one material film being separate from the protective film by a distance of less than 1 mm, forming a resist film on the main surface of the semiconductor substrate, covering the protective film and the at least one material film, the resist film having an opening therein corresponding to an inducing region for impurity defects, and inducing the impurity defects in the semiconductor substrate, using the resist film as a mask.

公开(公告)号：US20210104407A1

公开(公告)日：2021-04-08

申请号：US17106187

申请日：2020-11-30

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Misaki MEGURO ,  Takashi YOSHIMURA ,  Hiroshi TAKISHITA ,  Naoko KODAMA ,  Yasunori AGATA

IPC: H01L21/265 ,  H01L27/06 ,  H01L29/739 ,  H01L29/861

Abstract: There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.

公开(公告)号：US20220140091A1

公开(公告)日：2022-05-05

申请号：US17577361

申请日：2022-01-17

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Takashi YOSHIMURA ,  Yuichi ONOZAWA ,  Hiroshi TAKISHITA ,  Misaki MEGURO ,  Motoyoshi KUBOUCHI ,  Naoko KODAMA

IPC: H01L29/36 ,  H01L21/22 ,  H01L21/265 ,  H01L21/322 ,  H01L29/06 ,  H01L29/12 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

Abstract: Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.

公开(公告)号：US20210082702A1

公开(公告)日：2021-03-18

申请号：US17033925

申请日：2020-09-28

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Yasunori AGATA ,  Takashi YOSHIMURA ,  Hiroshi TAKISHITA ,  Misaki MEGURO ,  Naoko KODAMA ,  Yoshihiro IKURA ,  Seiji NOGUCHI ,  Yuichi HARADA ,  Yosuke SAKURAI

IPC: H01L21/22 ,  H01L27/06 ,  H01L29/06 ,  H01L29/10 ,  H01L29/32 ,  H01L29/40 ,  H01L29/739 ,  H01L29/861 ,  H01L21/265 ,  H01L21/268 ,  H01L29/66

Abstract: A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.

公开(公告)号：US20200058596A1

公开(公告)日：2020-02-20

申请号：US16663102

申请日：2019-10-24

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Naoko KODAMA

IPC: H01L23/544

Abstract: A back alignment mark on a surface of a semiconductor substrate is detected and a resist mask patterned into a circuit pattern corresponding to a surface element structure is formed on a back of the semiconductor substrate. Detection of the back alignment mark is performed by using a detector opposing the back of the semiconductor substrate and measuring contrast based on the intensity of reflected infrared light irradiated from the back of the semiconductor substrate. The back alignment mark is configured by a step formed by the surface of the semiconductor substrate and bottoms of trenches formed from the surface of the semiconductor substrate. A polysilicon film is embedded in the trenches. The back alignment mark has, for example, a cross-shaped planar layout in which three or more trenches are disposed in a direction parallel to the surface of the semiconductor substrate.

公开(公告)号：US20240047535A1

公开(公告)日：2024-02-08

申请号：US18485336

申请日：2023-10-12

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Takashi YOSHIMURA ,  Yuichi ONOZAWA ,  Hiroshi TAKISHITA ,  Misaki MEGURO ,  Motoyoshi KUBOUCHI ,  Naoko KODAMA

IPC: H01L29/36 ,  H01L21/22 ,  H01L21/265 ,  H01L21/322 ,  H01L29/06 ,  H01L29/12 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

CPC classification number: H01L29/36 ,  H01L21/22 ,  H01L21/265 ,  H01L21/322 ,  H01L29/06 ,  H01L29/12 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

Abstract: A semiconductor device, including a semiconductor substrate having a transistor portion and a diode portion, a drift region of a first conductivity type provided in the semiconductor substrate, a first electrode provided on one main surface side of the semiconductor substrate, and a second electrode provided on another main surface side of the semiconductor substrate, is provided. The diode portion includes a high concentration region and a crystalline defect region. The high concentration region has a higher doping concentration than the drift region and includes hydrogen. The doping concentration of the high concentration region at a peak position in a depth direction of the semiconductor substrate is equal to or less than 1.0×1015/cm3. The crystalline defect region is provided on the one main surface side of the semiconductor substrate relative to the peak position, has a higher crystalline defect density than the drift region, and includes hydrogen.

公开(公告)号：US20220277959A1

公开(公告)日：2022-09-01

申请号：US17748006

申请日：2022-05-18

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Yasunori AGATA ,  Takashi YOSHIMURA ,  Hiroshi TAKISHITA ,  Misaki MEGURO ,  Naoko KODAMA ,  Yoshihiro IKURA ,  Seiji NOGUCHI ,  Yuichi HARADA ,  Yosuke SAKURAI

IPC: H01L21/22 ,  H01L21/268 ,  H01L21/265 ,  H01L27/06 ,  H01L29/06 ,  H01L29/861 ,  H01L29/32 ,  H01L29/40 ,  H01L29/66 ,  H01L29/739 ,  H01L29/10

Abstract: A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.

公开(公告)号：US20200258998A1

公开(公告)日：2020-08-13

申请号：US16859637

申请日：2020-04-27

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Naoko KODAMA

IPC: H01L29/66 ,  H01L27/07

Abstract: A method of manufacturing a semiconductor device that includes a semiconductor element. The method includes the steps of providing a semiconductor substrate of a first conductivity type, forming an element structure of the semiconductor element, at a first main surface of the semiconductor substrate, forming a first protective film at a second main surface of the semiconductor substrate, implanting ions in the semiconductor substrate from the second main surface having the first protective film formed thereon, and removing the first protective film.

公开(公告)号：US20180269063A1

公开(公告)日：2018-09-20

申请号：US15883393

申请日：2018-01-30

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Naoko KODAMA

IPC: H01L21/266 ,  H01L29/66

Abstract: A method of manufacturing a semiconductor device, including providing a semiconductor wafer, forming a photoresist film on a main surface of the semiconductor wafer, forming a first mask pattern and a second mask pattern on the photoresist film, selectively removing portions of the photoresist film according to the first and second mask patterns, to respectively form a first opening and a second opening in the photoresist film, a position of the second opening differing from that of the first opening, and performing ion implantation of an impurity into the semiconductor wafer, using the photoresist film having the first and second openings formed therein as a mask.

公开(公告)号：US20240339333A1

公开(公告)日：2024-10-10

申请号：US18731181

申请日：2024-05-31

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Noriaki NOJI ,  Naoko KODAMA ,  Kazuhiro KITAHARA ,  Tatsuya HASHIMOTO ,  Ryota KATAOKA ,  Shunya HAYASHIDA

IPC: H01L21/3213 ,  H01L21/285

CPC classification number: H01L21/32139 ,  H01L21/28518

Abstract: A method of manufacturing a semiconductor device includes forming a surface structure having a MOS structure in a semiconductor substrate; forming an interlayer insulating partially covering the surface structure; forming an aluminum alloy film in contact with the surface structure and covering an entire area where the surface structure, including the interlayer insulating film, is formed; forming a resist film on the surface of the aluminum alloy film so as to have a thickness that covers the surface of the aluminum alloy while exposing a convex-shaped defect formed at the surface of the aluminum alloy film; patterning the aluminum alloy film using the resist film as a mask; and removing the resist film.