SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME

    公开(公告)号:US20220384409A1

    公开(公告)日:2022-12-01

    申请号:US17826791

    申请日:2022-05-27

    IPC分类号: H01L25/18 H01L23/48 H01L23/00

    摘要: The present invention relates to the field of photonic integrated circuits and provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes an EIC chip and a PIC chip arranged on a substrate, the EIC chip is located between the PIC chip and the substrate. In embodiments, at least one EIC chip is disposed on a surface of a single PIC chip facing the substrate, and the EIC chip is mounted on the substrate through a connection structure. Therefore, the wiring of the PIC chip in the semiconductor device of the present invention is optimized such that the voltage drop due to long wiring distance can be suppressed, and the package structure of the semiconductor device is also optimized.