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    AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor
    3.
    发明授权
    AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor 有权
    AlGaAs或InGaP低导通电压GaAs基异质结双极晶体管

    公开(公告)号：US06917061B2

    公开(公告)日：2005-07-12

    申请号：US10201760

    申请日：2002-07-22

    申请人： Noren Pan ,  Byung-Kwon Han

    发明人： Noren Pan ,  Byung-Kwon Han

    IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/10 ,  H01L29/45 ,  H01L29/737 ,  H01L21/8228

    CPC分类号： H01L29/66318 ,  H01L29/0817 ,  H01L29/1004 ,  H01L29/452 ,  H01L29/7371

    摘要： A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.

    摘要翻译： 提供了具有降低的导通电压阈值的异质结双极晶体管。 提供基底间隔层，并且交替地提供具有降低的能隙的发射极层。 基极间隔物或发射极间隔物的能量下降使得异质结双极晶体管实现较低的导通电压阈值。 如果使用发射极层的厚度保持最小以减少异质结双极晶体管中相关的空间电荷复合电流。

    HIGH-EFFICIENCY, LIGHTWEIGHT SOLAR SHEETS
    4.
    发明申请
    HIGH-EFFICIENCY, LIGHTWEIGHT SOLAR SHEETS 有权

    公开(公告)号：US20210323689A1

    公开(公告)日：2021-10-21

    申请号：US17356017

    申请日：2021-06-23

    申请人： MICROLINK DEVICES, INC.

    发明人： Noren Pan ,  Raymond Chan ,  Haruki Miyamoto ,  Andree Wibowo ,  Mark Osowski ,  Christopher Youtsey ,  David McCallum

    IPC分类号： B64D27/24 ,  H01L31/046 ,  B60L8/00 ,  B64C39/02 ,  H02S10/40

    摘要： Some embodiments include a high efficiency, lightweight solar sheet. Some embodiments include a solar sheet configured for installation on a surface of a UAV or on a surface of a component of a UAV. The solar sheet includes a plurality of solar cells and a polymer layer to which the plurality of solar cells are attached. Some embodiments include a kit for supplying solar power in a battery-powered or fuel cell powered unmanned aerial vehicle (UAV) by incorporating flexible solar cells into a component of a UAV, affixing flexible solar cells to a surface of a UAV, or affixing flexible solar cells to a surface of a component of a UAV. The kit also includes a power conditioning system configured to operate the solar cells within a desired power range and configured to provide power having a voltage compatible with an electrical system of the UAV.

    HBT and field effect transistor integration
    5.
    发明授权
    HBT and field effect transistor integration 有权
    HBT和场效应晶体管集成

    公开(公告)号：US08450162B2

    公开(公告)日：2013-05-28

    申请号：US13080212

    申请日：2011-04-05

    申请人： Noren Pan ,  Andree Wibowo

    发明人： Noren Pan ,  Andree Wibowo

    IPC分类号： H01L21/00

    CPC分类号： H01L27/0605 ,  H01L21/8249 ,  H01L21/8252 ,  H01L27/0623

    摘要： Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices.

    摘要翻译： 公开了使用两个单独的生长方法制造集成BiFET的方法和系统。 该方法的性能在第一制造环境中制造BiFET的FET部分。 该方法的性能在第二制造环境中制造BiFET的HBT部分。 通过在两个或更多个单独的反应器中分离FET部分和HBT部分的制造，可以实现两种器件的最佳器件性能。

    Assembly techniques for solar cell arrays and solar cells formed therefrom
    7.
    发明授权
    Assembly techniques for solar cell arrays and solar cells formed therefrom 有权
    用于太阳能电池阵列和由其形成的太阳能电池的装配技术

    公开(公告)号：US08361827B2

    公开(公告)日：2013-01-29

    申请号：US12773582

    申请日：2010-05-04

    申请人： Raymond Chan ,  Christopher Youtsey

    发明人： Raymond Chan ,  Christopher Youtsey

    IPC分类号： H01L21/00

    CPC分类号： H01L31/0504 ,  H01L31/0508 ,  Y02E10/50

    摘要： An assembly technique for assembling solar cell arrays is provided. During the fabrication of a solar cell, openings through the semiconductor layer are etched through to a top surface of the backmetal layer. The solar cells include an exposed top surface of the backmetal layer. A plurality of solar cells are assembled into a solar cell array where adjacent cells are interconnected in an electrically serial or parallel fashion solely from the top surface of the solar cells.

    摘要翻译： 提供了组装太阳能电池阵列的装配技术。 在制造太阳能电池期间，通过半导体层的开口被蚀刻到背面金属层的顶表面。 太阳能电池包括背面金属层的暴露的顶表面。 多个太阳能电池被组装成太阳能电池阵列，其中相邻电池单独地以电串联或并联的方式从太阳能电池的顶表面互连。

    High on-state breakdown heterojunction bipolar transistor
    9.
    发明授权
    High on-state breakdown heterojunction bipolar transistor 有权
    高导通状态击穿异质结双极晶体管

    公开(公告)号：US07687886B2

    公开(公告)日：2010-03-30

    申请号：US11153078

    申请日：2005-06-14

    申请人： Noren Pan ,  Andree Wibowo

    发明人： Noren Pan ,  Andree Wibowo

    IPC分类号： H01L27/082

    CPC分类号： H01L29/0817 ,  H01L29/0821 ,  H01L29/7371

    摘要： A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The improvement in the on-state breakdown voltage is related to the suppression of high electric fields adjacent a junction of a collector layer and a sub-collector layer forming a collector region of the HBT.

    摘要翻译： 异相结双极晶体管（HBT）具有改善的导通状态击穿电压VCE。 HBT的导通状态击穿电压的改善提高了HBT的输出功率特性和HBT承受大阻抗失配（大VSWR）的能力。 导通状态击穿电压的改善与抑制形成HBT的集电极区域的集电极层和副集电极层的接合附近的高电场有关。

    METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL
    10.
    发明申请
    METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL 有权
    制备薄膜III-V复合太阳能电池的方法

    公开(公告)号：US20090044860A1

    公开(公告)日：2009-02-19

    申请号：US12167583

    申请日：2008-07-03

    申请人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum

    发明人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum

    IPC分类号： H01L31/0256

    CPC分类号： H01L31/1852 ,  H01L31/06875 ,  Y02E10/544

    摘要： The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

    摘要翻译： 本发明利用外延剥离，其中在衬底和薄膜III-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑，在薄膜III-V复合太阳能电池从基板分离之前，将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离，牺牲层作为外延剥离的一部分被去除。 一旦基板与薄膜III-V复合太阳能电池分离，则可以将基板重新用于形成另一薄膜III-V复合太阳能电池。