公开(公告)号：US20100237388A1

公开(公告)日：2010-09-23

申请号：US12731719

申请日：2010-03-25

申请人： Noren PAN ,  Andree Wibowo

发明人： Noren PAN ,  Andree Wibowo

IPC分类号： H01L29/737

CPC分类号： H01L29/0817 ,  H01L29/0821 ,  H01L29/7371

摘要： A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The improvement in the on-state breakdown voltage is related to the suppression of high electric fields adjacent a junction of a collector layer and a sub-collector layer forming a collector region of the HBT.

摘要翻译： 异相结双极晶体管（HBT）具有改善的导通状态击穿电压VCE。 HBT的导通状态击穿电压的改善提高了HBT的输出功率特性和HBT承受大阻抗失配（大VSWR）的能力。 导通状态击穿电压的改善与抑制形成HBT的集电极区域的集电极层和副集电极层的接合附近的高电场有关。

公开(公告)号：US07115466B2

公开(公告)日：2006-10-03

申请号：US11039299

申请日：2005-01-20

申请人： Roger E. Welser ,  Paul M. Deluca ,  Charles R. Lutz ,  Kevin S. Stevens ,  Noren Pan

发明人： Roger E. Welser ,  Paul M. Deluca ,  Charles R. Lutz ,  Kevin S. Stevens ,  Noren Pan

IPC分类号： H01L21/8249

CPC分类号： H01L29/66318 ,  H01L29/1004 ,  H01L29/2003 ,  H01L29/7371

摘要： A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III–V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.

公开(公告)号：US20050139863A1

公开(公告)日：2005-06-30

申请号：US10969804

申请日：2004-10-20

申请人： Roger Welser ,  Paul DeLuca ,  Charles Lutz ,  Kevin Stevens ,  Noren Pan

发明人： Roger Welser ,  Paul DeLuca ,  Charles Lutz ,  Kevin Stevens ,  Noren Pan

IPC分类号： H01L21/331 ,  H01L29/10 ,  H01L29/20 ,  H01L29/737 ,  H01L31/0328

CPC分类号： H01L29/1004 ,  H01L29/2003 ,  H01L29/66318 ,  H01L29/7371

摘要： A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be the base layer of gallium arsenide-based heterojunction bipolar transistors and can be lattice-matched to gallium arsenide emitter and/or collector layers by controlling concentrations of indium and nitrogen in the base layer. The base layer can have a graded band gap that is formed by changing the flow rates during deposition of III and V additive elements employed to reduce band gap relative to different III-V elements that represent the bulk of the layer. The flow rates of the III and V additive elements maintain an essentially constant doping-mobility product value during deposition and can be regulated to obtain pre-selected base-emitter voltages at junctions within a resulting transistor.

摘要翻译： 具有高碳掺杂浓度的半导体材料包括镓，铟，砷和氮。 所公开的半导体材料由于获得的高碳掺杂剂浓度而具有低的薄层电阻率。 该材料可以是基于砷化镓的异质结双极晶体管的基极层，并且可以通过控制基极层中的铟和氮的浓度而与砷化镓发射极和/或集电极层晶格匹配。 基层可以具有渐变带隙，其通过改变用于减少相对于表示该层的主体的不同III-V元素的带隙的III和V添加元素的沉积期间的流速而形成。 III和V添加元素的流速在沉积期间保持基本恒定的掺杂迁移率产物值，并且可以调节以在所得晶体管内的结处获得预选的基极 - 发射极电压。

公开(公告)号：US20050064672A1

公开(公告)日：2005-03-24

申请号：US10824697

申请日：2004-04-14

申请人： Roger Welser ,  Paul Deluca ,  Noren Pan

发明人： Roger Welser ,  Paul Deluca ,  Noren Pan

IPC分类号： H01L21/331 ,  H01L29/10 ,  H01L29/20 ,  H01L29/737 ,  H01L29/739 ,  H01L31/0328

CPC分类号： H01L29/66318 ,  H01L29/1004 ,  H01L29/2003 ,  H01L29/7371

摘要： A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.

摘要翻译： 公开了具有高碳掺杂浓度并由镓，铟，砷和氮组成的半导体材料。 该材料可用于形成基于砷化镓的异质结双极晶体管的基极层，因为它可以通过控制铟和氮的浓度而与砷化镓晶格匹配。 所公开的半导体材料由于获得高的碳掺杂剂浓度而具有低的电阻率。

公开(公告)号：US5666373A

公开(公告)日：1997-09-09

申请号：US597330

申请日：1996-02-06

申请人： Richard C. Sharp ,  Derek E. Spock ,  Noren Pan

发明人： Richard C. Sharp ,  Derek E. Spock ,  Noren Pan

IPC分类号： G02F1/35 ,  H01S3/067 ,  H01S3/08 ,  H01S3/0941 ,  H01S3/098 ,  H01S3/16 ,  H01L21/70

CPC分类号： H01S3/1118 ,  H01S3/067 ,  G02F1/3523 ,  H01S2303/00 ,  H01S3/0675 ,  H01S3/08059 ,  H01S3/09415 ,  H01S3/1616

摘要： A laser having a gain medium disposed in a resonant cavity having a pair of end reflectors. One of such reflectors has a reflectivity lower than the reflectivity of the other one of the reflectors. The reflectors are arranged to provide a single ended output for the cavity through the one of the reflectors having the lower reflectivity. A saturable absorber is formed on the one of the reflectors having the lower reflectivity. With such an arrangement, fabrication of the saturable absorber on the single ended output coupler is greatly simplified. The gain medium is a doped fiber and the saturable absorber formed on the one of the reflectors having the lower reflectivity is affixed to an end of the doped fiber gain medium. With such an arrangement, a highly efficient, relatively low cost, mode locked laser is provided.

摘要翻译： 具有设置在具有一对端反射器的谐振腔中的增益介质的激光器。 这种反射器之一具有低于另一个反射器的反射率的反射率。 反射器被布置成通过具有较低反射率的反射器中的一个提供用于空腔的单端输出。 在具有较低反射率的反射器之一上形成可饱和吸收体。 通过这样的布置，单端输出耦合器上的可饱和吸收体的制造大大简化。 增益介质是掺杂光纤，并且形成在具有较低反射率的反射器中的可饱和吸收体固定到掺杂光纤增益介质的端部。 通过这种布置，提供了高效率，相对低成本的锁模激光器。

公开(公告)号：US5077875A

公开(公告)日：1992-01-07

申请号：US668707

申请日：1991-03-12

申请人： William E. Hoke ,  Noren Pan ,  James R. Carter

发明人： William E. Hoke ,  Noren Pan ,  James R. Carter

IPC分类号： C30B25/02 ,  C30B25/14

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  C30B29/48

摘要： A metalorganic chemical vapor deposition (MOCVD) reactor vessel is provided for the growth of Group II-VI, Group III-V, or Group IV layers particularly for use in thin heterostructure devices. The reactor vessel includes a chamber having a top surface substantially parallel to a semiconductor substrate disposed within the chamber and an inlet through which a vapor stream is directed. The chamber further includes a plate having a plurality of apertures disposed therethrough and a block disposed adjacent to the plate, to increase the uniformity and decrease the turbulence of the vapor stream.

摘要翻译： 提供了一种金属有机化学气相沉积（MOCVD）反应器容器，用于II-VI族，III-V族或IV族层的生长，特别是用于薄异质结构器件。 反应堆容器包括具有基本上平行于设置在室内的半导体衬底的顶表面的腔室和蒸气流引导通过的入口。 该室还包括具有多个设置在其中的孔的板和邻近该板设置的块，以增加蒸气流的均匀性并减小其紊流。

公开(公告)号：US08450162B2

公开(公告)日：2013-05-28

申请号：US13080212

申请日：2011-04-05

申请人： Noren Pan ,  Andree Wibowo

发明人： Noren Pan ,  Andree Wibowo

IPC分类号： H01L21/00

CPC分类号： H01L27/0605 ,  H01L21/8249 ,  H01L21/8252 ,  H01L27/0623

摘要： Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BiFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices.

摘要翻译： 公开了使用两个单独的生长方法制造集成BiFET的方法和系统。 该方法的性能在第一制造环境中制造BiFET的FET部分。 该方法的性能在第二制造环境中制造BiFET的HBT部分。 通过在两个或更多个单独的反应器中分离FET部分和HBT部分的制造，可以实现两种器件的最佳器件性能。

公开(公告)号：US20100186822A1

公开(公告)日：2010-07-29

申请号：US12695671

申请日：2010-01-28

申请人： Noren PAN ,  Christopher YOUTSEY ,  David S. MCCALLUM ,  Victor C. ELARDE ,  John M. DALLESASSE

发明人： Noren PAN ,  Christopher YOUTSEY ,  David S. MCCALLUM ,  Victor C. ELARDE ,  John M. DALLESASSE

IPC分类号： H01L31/042 ,  H01L31/00 ,  H01L31/18 ,  H01L31/0256

CPC分类号： H01L31/02168 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/1868 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

摘要： The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.

摘要翻译： 本申请利用氧化工艺制造III-V族化合物半导体太阳能电池器件。 通过氧化处理，设置在电池单元上的窗口层被氧化以提高太阳能电池装置的效率。 氧化的窗口具有增加的带隙以最小化电子和空穴的表面复合。 氧化的窗口还提高了在常规窗口层中吸收的波长的透明度。

公开(公告)号：US07687886B2

公开(公告)日：2010-03-30

申请号：US11153078

申请日：2005-06-14

申请人： Noren Pan ,  Andree Wibowo

发明人： Noren Pan ,  Andree Wibowo

IPC分类号： H01L27/082

CPC分类号： H01L29/0817 ,  H01L29/0821 ,  H01L29/7371

摘要： A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The improvement in the on-state breakdown voltage is related to the suppression of high electric fields adjacent a junction of a collector layer and a sub-collector layer forming a collector region of the HBT.

摘要翻译： 异相结双极晶体管（HBT）具有改善的导通状态击穿电压VCE。 HBT的导通状态击穿电压的改善提高了HBT的输出功率特性和HBT承受大阻抗失配（大VSWR）的能力。 导通状态击穿电压的改善与抑制形成HBT的集电极区域的集电极层和副集电极层的接合附近的高电场有关。

公开(公告)号：US20090044860A1

公开(公告)日：2009-02-19

申请号：US12167583

申请日：2008-07-03

申请人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum

发明人： Noren Pan ,  Glen Hillier ,  Duy Phach Vu ,  Rao Tatavarti ,  Christopher Youtsey ,  David McCallum

IPC分类号： H01L31/0256

CPC分类号： H01L31/1852 ,  H01L31/06875 ,  Y02E10/544

摘要： The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

摘要翻译： 本发明利用外延剥离，其中在衬底和薄膜III-V复合太阳能电池之间的外延生长中包括牺牲层。 为了在没有基板的情况下为薄膜III-V复合太阳能电池提供支撑，在薄膜III-V复合太阳能电池从基板分离之前，将背衬层施加到薄膜III-V复合太阳能电池的表面。 为了将薄膜III-V复合太阳能电池与衬底分离，牺牲层作为外延剥离的一部分被去除。 一旦基板与薄膜III-V复合太阳能电池分离，则可以将基板重新用于形成另一薄膜III-V复合太阳能电池。