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公开(公告)号：US10586820B2
公开(公告)日：2020-03-10
申请号：US15579255
申请日：2016-05-31
发明人： Yang Ni
IPC分类号： H01L27/146 , H04N5/355
摘要： The present application concerns an optical sensor that includes one or more charge transfer pixels (10) each including a buried photodiode (11) generating a photoelectric charge when illuminated, a conversion element (12) receiving at least a portion of the photoelectric charge and tending to impose, on the photodiode, a potential satisfying a non-linear relationship with the intensity of generation of the photoelectric charge, and a charge transfer element (14) for reading the charge stored by the photodiode (11) such that the residual charge in same is zero after the reading by transfer.
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公开(公告)号：US20190124242A1
公开(公告)日：2019-04-25
申请号：US16096948
申请日：2017-04-24
发明人： Yang Ni
摘要： The invention relates to an imager system comprising a main image sensor (1) and comprising a main matrix (2) of active pixels exhibiting a first instantaneous dynamic span of luminous sensitivity, and a main reading circuit adapted for reading the pixels of the main image sensor (1) and for acquiring a main image on the basis of said reading, an auxiliary image sensor (11) comprising a second matrix (12) of active pixels exhibiting a second instantaneous dynamic span of luminous sensitivity which is more extensive than the first instantaneous dynamic span of luminous sensitivity, and an auxiliary reading circuit adapted for reading the active pixels of the auxiliary image sensor (11) and for acquiring an auxiliary image on the basis of said reading, and a data processing unit (10) configured to determine at least one value of an acquisition parameter of the main image sensor on the basis of the auxiliary image.
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公开(公告)号：US09854194B2
公开(公告)日：2017-12-26
申请号：US14438212
申请日：2013-10-25
发明人： Yang Ni
IPC分类号： H04N5/374 , H01L27/146 , H04N5/355 , H04N5/359 , H04N5/369
CPC分类号： H04N5/3742 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H04N5/355 , H04N5/3592 , H04N5/3594 , H04N5/3696
摘要： The invention concerns a structure of a CMOS active pixel, comprising a semi-conductive substrate (1) of a first type, at least one first photodiode operating in photovoltaic mode comprising a photovoltaic conversion area (2) defined by a doped area of a second type forming a PN junction with the substrate, said first photodiode re-emitting photoelectric charge carriers collected by the PN junction during the exposure of said first photodiode to a light, at least one second photodiode operating in integration mode and reverse-biased, said second photodiode comprising a charge accumulation area (3) defined by a doped area of the second type forming a PN junction with the substrate, said charge accumulation area being exposed to the charge carriers from the photovoltaic conversion area (2) in order to accumulate such charge carriers.
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公开(公告)号：US20140217543A1
公开(公告)日：2014-08-07
申请号：US14131897
申请日：2012-07-11
申请人： Yang Ni
发明人： Yang Ni
IPC分类号： H01L27/146
CPC分类号： H01L27/14654 , H01L27/14609 , H01L27/14649 , H01L27/1465 , H01L27/14683 , H01L27/14689 , H01L27/14694 , H01L31/1035 , H01L31/1844 , H01L31/1868 , Y02E10/544 , Y02P70/521
摘要： The invention relates to an InGaAs photodiode army (101) and to the method for manufacturing same, wherein said array includes: a cathode including at least one indium-phosphide substrate layer (4) and an active gallium-indium arsenide layer (5); and a plurality of anodes (3) at least partially formed in the active gallium-indium arsenide layer by diffusing a P-type dopant, the interaction between an anode (3) and the cathode forming a photodiode. According to said method, an indium-phosphide passivation layer (6) is arranged on the active layer before the diffusion of the P-type dopant forming the anodes (3), and a first selective etching is performed so as to remove, over the entire thickness thereof, an area (10) of the passivation layer (6) surrounding each anode (3).
摘要翻译： 本发明涉及一种InGaAs光电二极管军（101）及其制造方法，其中所述阵列包括：包括至少一个磷化铟基底层（4）和活性砷化镓砷化镓层（5）的阴极; 以及通过扩散P型掺杂剂至少部分地形成在所述活性镓铟砷化物层中的多个阳极（3），阳极（3）和形成光电二极管的阴极之间的相互作用。 根据所述方法，在形成阳极（3）的P型掺杂物的扩散之前，在有源层上布置了磷化铟钝化层（6），并且进行第一选择性蚀刻以除去 其整个厚度，围绕每个阳极（3）的钝化层（6）的区域（10）。
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公开(公告)号：US20120074299A1
公开(公告)日：2012-03-29
申请号：US13256351
申请日：2010-03-10
申请人： Yang Ni
发明人： Yang Ni
IPC分类号： H01L27/146
CPC分类号： H04N3/155 , H04N5/335 , H04N5/341 , H04N5/3745 , H04N5/37452
摘要： An image matrix sensor having a plurality of individual detection structures associated with respective pixels, each individual detection structure including a photodiode having at least one solar cell mode operating range, a first amplifier stage constantly supplied with power and receiving, as an input, a voltage dependent on the voltage of the photodiode which falls within said range; and a second amplifier stage linked to the output of the first amplifier stage and supplied with power in a different manner according to whether or not the first amplifier stage is read.
摘要翻译： 一种图像矩阵传感器，具有与各个像素相关联的多个单独的检测结构，每个单独的检测结构包括具有至少一个太阳能电池模式工作范围的光电二极管，持续供电并接收电压的第一放大器级作为输入， 取决于落在所述范围内的光电二极管的电压; 以及第二放大器级，其连接到第一放大器级的输出，并且根据第一放大器级是否被读取以不同的方式提供电力。
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公开(公告)号：US20210218910A1
公开(公告)日：2021-07-15
申请号：US17104545
申请日：2020-11-25
发明人： Vincent Noguier , Simon Ferré
摘要： A method for operating an image sensor including a medium having at least one photosensitive material capable of generating charges by photoelectric effect when the sensor is exposed to an incident light, and a collection electrodes in contact with the medium associated with pixel circuits. The method includes at least one electrical field that is created and includes at least one lateral component to collect the charges on at least one of the collection electrodes, allowing them to be read by the associated pixel circuit, wherein said electrical field is generated by creating at least one potential difference between said collection electrode and at least one other zone of the sensor, brought to a different potential, this other zone being situated between at least two collection electrodes.
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公开(公告)号：US08884205B2
公开(公告)日：2014-11-11
申请号：US13256351
申请日：2010-03-10
申请人： Yang Ni
发明人： Yang Ni
IPC分类号： H04N5/335 , H01L27/146 , H04N3/14 , H04N5/3745 , H04N5/341
CPC分类号： H04N3/155 , H04N5/335 , H04N5/341 , H04N5/3745 , H04N5/37452
摘要： An image matrix sensor having a plurality of individual detection structures associated with respective pixels, each individual detection structure including a photodiode having at least one solar cell mode operating range, a first amplifier stage constantly supplied with power and receiving, as an input, a voltage dependent on the voltage of the photodiode which falls within said range; and a second amplifier stage linked to the output of the first amplifier stage and supplied with power in a different manner according to whether or not the first amplifier stage is read.
摘要翻译： 一种图像矩阵传感器，具有与各个像素相关联的多个单独的检测结构，每个单独的检测结构包括具有至少一个太阳能电池模式工作范围的光电二极管，持续供电并接收电压的第一放大器级作为输入， 取决于落在所述范围内的光电二极管的电压; 以及第二放大器级，其连接到第一放大器级的输出，并且根据第一放大器级是否被读取以不同的方式提供电力。
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公开(公告)号：US11196947B2
公开(公告)日：2021-12-07
申请号：US16573165
申请日：2019-09-17
发明人： Yang Ni
IPC分类号： H04N5/351 , H04N5/3745 , H04N5/378
摘要： A matrix-array optical sensor including individual detection cells each including at least one photodiode operating in photovoltaic mode, a first amplifier stage connected directly or indirectly to the photodiode and a capacitance connected directly or indirectly to the output of the first amplifier stage and the voltage of which varies with the illuminance on the photodiode, the sensor being arranged to a ensure a one-way flow of current to or from said capacitance in order to bring the latter to a voltage corresponding to an extremum of the illuminance during an operating cycle of the photodiode.
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公开(公告)号：US10332926B2
公开(公告)日：2019-06-25
申请号：US15316828
申请日：2015-06-12
发明人： Yang Ni
IPC分类号： H04N5/335 , H01L27/146 , H04N5/3745 , H04N5/357 , H04N5/363 , H04N5/378
摘要： The invention concerns a structure of a readout circuit, formed on a semiconductor substrate (1) of a first type, and intended to measure the charges received from an external charge source (2) external to the substrate (1) according to successive charge integration cycles, said structure comprising: an injection diode configured to inject, into the substrate (1), the charges received from the external charge source (2), a collector diode suitable for collecting, in the substrate (1), at least a portion of the charges injected by the injection diode and for accumulating said charges during an integration cycle, a charge recovery structure (7), configured to recover the charges accumulated in said collector diode, means for initializing the charge recovery structure (7) at the end of each integration cycle, by restoring the electrical potential of said charge recovery structure to an initial potential.
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公开(公告)号：US10068942B2
公开(公告)日：2018-09-04
申请号：US14764713
申请日：2014-01-31
发明人： Yang Ni
IPC分类号： H01L27/146 , H01L31/0304 , H01L31/109 , H01L31/18
摘要： The invention concerns a photodiode array, and the method for producing same, comprising—a cathode comprising at least one substrate layer (4) made from a material from the indium phosphide family and one active layer (5) made from a material from the gallium indium arsenide family, and characterized in that the array further comprises at least two sorts of doped regions of the same type at least partially formed in the active layer (5):—first doped regions (3) forming, with the cathode, photodiodes for forming images,—at least one second doped region (8) absorbing excess charge carriers so as to discharge them.
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