WAVEGUIDE TRANSITIONS FOR HYBRID THIN-SILICON/III-V PHOTONICS

    公开(公告)号:US20240142700A1

    公开(公告)日:2024-05-02

    申请号:US18385119

    申请日:2023-10-30

    IPC分类号: G02B6/122 G02B6/136

    摘要: A device comprises a substrate having lower and upper silicon layers separated by a lower dielectric layer and a III-V structure bonded to the substrate, with first, second, and third sections along an optical axis. The first section comprises a first upper waveguide segment of the upper silicon layer, increasing in width from a first width to a second width at an interface between the first and second sections, the III-V structure overlapping with a tapered portion of the first upper waveguide segment. The second section comprises a second upper waveguide segment of the upper silicon layer decreasing in width, and a first lower waveguide segment of the lower silicon layer wider than the second upper waveguide segment at the interface between the second and third sections. The third section comprises a second lower waveguide segment of the lower silicon layer.

    Integrated bandgap temperature sensor

    公开(公告)号:US11971575B2

    公开(公告)日:2024-04-30

    申请号:US18084028

    申请日:2022-12-19

    IPC分类号: G02B6/12 G02B6/122

    摘要: Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

    Integrated bandgap temperature sensor

    公开(公告)号:US11536899B2

    公开(公告)日:2022-12-27

    申请号:US16916781

    申请日:2020-06-30

    IPC分类号: G02B6/12 G02B6/122

    摘要: Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

    Polarization insensitive colorless optical devices

    公开(公告)号:US11437786B2

    公开(公告)日:2022-09-06

    申请号:US16940835

    申请日:2020-07-28

    摘要: Embodiments of the invention describe polarization insensitive optical devices utilizing polarization sensitive components. Light comprising at least one polarization state is received, and embodiments of the invention select a first optical path for light comprising a first polarization state or a second optical path for light comprising a second polarization state orthogonal to the first polarization state. The optical paths include components to at least amplify and/or modulate light comprising the first polarization state; the second optical path includes a polarization rotator to rotate light comprising the second polarization state to the first polarization state. Embodiments of the invention further describe optical devices including a polarization mode converter to convert light comprising a first and a second polarization state to light comprising different spatial modes of the first polarization state; light comprising the different spatial modes of the first polarization state is subsequently amplified and modulated.

    Loss monitoring in photonic circuit fabrication

    公开(公告)号:US11428646B2

    公开(公告)日:2022-08-30

    申请号:US17006366

    申请日:2020-08-28

    摘要: Optical fabrication monitor structures can be included in a design fabricated on a wafer from a mask or fabrication reticle. A first set of components can be formed in an initial fabrication cycle, where the first set includes functional components and monitor structures. A second set of components can be formed by subsequent fabrication processes that can potentially cause errors or damage to the first set of components. The monitor structures can be implemented during fabrication (e.g., in a cleanroom) to detect fabrication errors without pulling or scrapping the wafer.