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24 条记录 (耗时 0.023 秒)

    Semiconductor device comprising a highspeed static induction transistor
    2.
    发明授权
    Semiconductor device comprising a highspeed static induction transistor 失效
    包括高速静电感应晶体管的半导体器件

    公开(公告)号：US5532511A

    公开(公告)日：1996-07-02

    申请号：US409684

    申请日：1995-03-23

    申请人： Jun-ichi Nishizawa ,  Toru Kurabayashi

    发明人： Jun-ichi Nishizawa ,  Toru Kurabayashi

    IPC分类号： H01L21/285 ,  H01L21/335 ,  H01L29/772 ,  H01L29/80 ,  H01L29/04 ,  H01L31/036 ,  H01L31/112

    CPC分类号： H01L29/66454 ,  H01L21/28587 ,  H01L29/7722 ,  H01L29/802

    摘要： A semiconductor device includes a substrate crystal of a type for epitaxial growth thereon. The substrate crystal has a (111)A face and a (111)B face. Also provided are at least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the (111)A face of the substrate crystal according to metal organic chemical vapor deposition, thereby providing a structure having a source and a drain. A gate side includes the (111)B face of the substrate crystal. A gate insulating layer is deposited by way of epitaxial growth on the gate side according to molecular layer epitaxy. Alternatively, the at least two semiconductor regions may be deposited on the (111)B face of the substrate crystal according to molecular layer epitaxy, and the gate insulating layer may be deposited on the (111)A face of the substrate crystal according to metal organic chemical vapor deposition.

    摘要翻译： 半导体器件包括其上用于外延生长的类型的衬底晶体。 衬底晶体具有（111）A面和（111）B面。 还提供了根据金属有机化学气相沉积在衬底晶体的（111）A面上通过外延生长沉积的不同导电类型的至少两个半导体区域，由此提供具有源极和漏极的结构。 栅极侧包括衬底晶体的（111）B面。 根据分子层外延，栅极绝缘层通过外延生长沉积在栅极侧。 或者，可以根据分子层外延将至少两个半导体区域沉积在衬底晶体的（111）B面上，并且栅极绝缘层可以根据金属沉积在衬底晶体的（111）A面上 有机化学气相沉积。

    High sensitive multi-wavelength spectral analyzer
    3.
    发明授权
    High sensitive multi-wavelength spectral analyzer 失效
    高灵敏度多波长光谱分析仪

    公开(公告)号：US5329353A

    公开(公告)日：1994-07-12

    申请号：US832475

    申请日：1992-02-07

    申请人： Tsutomu Ichimura ,  Toshiyuki Nogoshi ,  Fumio Inaba

    发明人： Tsutomu Ichimura ,  Toshiyuki Nogoshi ,  Fumio Inaba

    IPC分类号： G01J3/02 ,  G01J3/18 ,  G01J3/24 ,  G01J3/28 ,  G01J3/36 ,  G01N21/64 ,  G01N21/65

    CPC分类号： G01J3/2803 ,  G01J3/18 ,  G01J2003/2813 ,  G01J3/0208 ,  G01J3/0256 ,  G01J3/0291 ,  G01J3/24

    摘要： A compact, high sensitive, multi-wavelength spectral analyzer capable of simultaneously obtaining a spectral distribution of extremely weak radiation such as bioluminescence, chemiluminescence, extremely weak fluorescence caused by excitation light, Raman scattered light, etc. with an extremely high luminosity and without wavelength scanning. The spectral analyzer comprises a spectroscope and a high sensitive one- or two-dimensional photodetector. The spectroscope includes an entrance slit, a collimator lens of high luminosity disposed such that a focal point of the collimator lens is coincident with the entrance slit to convert light emerging therefrom into parallel rays, a reflection diffraction grating that diffracts the parallel rays from the collimator lens to produce spectra, and an imaging lens that focuses the parallel rays diffracted by the reflection diffraction grating on an image plane thereof to form a spectral image. The photodetector is disposed on the image plane of the imaging lens.

    摘要翻译： 一种紧凑，高灵敏度的多波长光谱分析仪，能够同时获得非常弱的辐射的光谱分布，例如生物发光，化学发光，由激发光引起的极弱荧光，拉曼散射光等，具有极高的发光度和无波长 扫描。 光谱分析仪包括分光镜和高灵敏度的一维或二维光电探测器。 分光镜包括入射狭缝，高亮度的准直透镜，其设置成使得准直透镜的焦点与入射狭缝重合，以将从其出射的光转换为平行光线;反射衍射光栅，衍射来自准直仪的平行光线 透镜以产生光谱，以及将由反射衍射光栅衍射的平行光线聚焦在其图像平面上以形成光谱图像的成像透镜。 光检测器设置在成像透镜的图像平面上。

    Water dispersion containing ultrafine particles of organic compounds
    5.
    发明授权
    Water dispersion containing ultrafine particles of organic compounds 失效
    含有有机化合物超微粒子的水分散体

    公开(公告)号：US5354563A

    公开(公告)日：1994-10-11

    申请号：US77713

    申请日：1993-06-16

    申请人： Hideki Toyotama

    发明人： Hideki Toyotama

    IPC分类号： A61K9/14 ,  B01D3/34 ,  B01D7/00 ,  A61K9/10

    CPC分类号： B01D7/00 ,  A61K9/14 ,  B01D3/343 ,  Y10S514/937 ,  Y10S514/951 ,  Y10S514/952 ,  Y10S516/921 ,  Y10S516/922

    摘要： A water-dispersible condensate of water-insoluble ultrafine particles of medicine or hormones having a particle size of at largest 4 .mu.m prepared by the steps of heating the medicine or hormone in a vacuum vessel at a temperature of 30.degree. C. higher than the boiling point and at a pressure between 0.01 Torr and 10 Torr to evaporate the medicine or hormone and condensing the medicine or hormone on a recovery plate to obtain the condensate.

    摘要翻译： 通过以下步骤制备的具有最大4μm粒径的药物或激素水不溶性超细颗粒的水分散性凝结物，该步骤是在真空容器中加热药物或激素，温度高于30℃ 沸点，压力在0.01Torr至10Torr之间以蒸发药物或激素，并将药物或激素冷凝在回收板上以获得冷凝物。

    Method of manufacturing a static induction field-effect transistor
    6.
    发明授权
    Method of manufacturing a static induction field-effect transistor 失效
    制造静态感应场效应晶体管的方法

    公开(公告)号：US5296403A

    公开(公告)日：1994-03-22

    申请号：US965722

    申请日：1992-10-23

    申请人： Jun-ichi Nishizawa ,  Toru Kurabayashi

    发明人： Jun-ichi Nishizawa ,  Toru Kurabayashi

    IPC分类号： H01L29/78 ,  H01L21/205 ,  H01L21/285 ,  H01L21/335 ,  H01L29/772 ,  H01L29/80 ,  H01L21/20

    CPC分类号： H01L29/045 ,  H01L21/28587 ,  H01L29/66454 ,  H01L29/7722 ,  H01L29/802

    摘要： A semiconductor device comprises a vertical MIS-SIT which has a smaller source-to-drain distance for operation at ultra-high speed. The semiconductor device has a substrate crystal for epitaxial growth thereon, least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the substrate crystal according to either metal organic chemical vapor deposition (MO-CVD) or molecular layer epitaxy (MLE), thereby providing a source-drain structure, a gate side formed by etching the semiconductor regions of the source-drain structure, the gate side comprising either a (111)A face or a (111)B face, and a semiconductor region deposited as a gate by way of epitaxial growth on the gate side according to either MO-CVD or MLE.

    摘要翻译： 半导体器件包括垂直MIS-SIT，其具有较小的源极到漏极距离，以超高速度操作。 半导体器件具有用于在其上进行外延生长的衬底晶体，根据金属有机化学气相沉积（MO-CVD）或分子层外延（MLE），在衬底晶体上通过外延生长沉积不同导电类型的至少两个半导体区域， 从而提供源极 - 漏极结构，通过蚀刻源极 - 漏极结构的半导体区域形成的栅极侧，栅极侧包括（111）A面或（111）B面，以及沉积为 通过MO-CVD或MLE在栅极侧通过外延生长的栅极。

    Process for producing graphite
    7.
    发明授权
    Process for producing graphite 失效
    生产石墨的方法

    公开(公告)号：US4876077A

    公开(公告)日：1989-10-24

    申请号：US133371

    申请日：1987-12-15

    申请人： Mutsuaki Murakami

    发明人： Mutsuaki Murakami

    IPC分类号： C01B31/04 ,  C04B35/524 ,  D01F9/24

    CPC分类号： D01F9/24 ,  C01B31/04 ,  C04B35/524 ,  C01P2002/60

    摘要： A process for producing graphite includes heat treating, in an inert gas or in vacuo, at least one polymer selected from the group consisting of a polyphenyleneoxadiazole, polybenzothiazoles, a polybenzobisthiazole, a polybenzoxazole, a polybenzobisoxazole and a polythiazole, at a temperature of at least 1600.degree. C., preferably at least 2000.degree. C., for at least 30 minutes, preferably at least 60 minutes, to convert the polymer to a highly-graphitized graphite. The process produces almost perfect graphite in any shape, such as film-shaped for large-area graphite, fibrous or powdered.

    摘要翻译： 一种生产石墨的方法包括在惰性气体或真空中至少一种至少一种选自聚苯并恶二唑，聚苯并噻唑，聚苯并双噻唑，聚苯并恶唑，聚苯并双恶唑和聚噻唑的聚合物，在至少 1600℃，优选至少2000℃，至少30分钟，优选至少60分钟，以将聚合物转化为高度石墨化的石墨。 该方法产生任何形状的几乎完美的石墨，例如大面积石墨的薄膜形状，纤维状或粉末状。

    Method and apparatus for magneto-optical recording of a plurality of discrete levels
    10.
    发明授权
    Method and apparatus for magneto-optical recording of a plurality of discrete levels 失效
    用于多个离散电平的磁光记录的方法和装置

    公开(公告)号：US5432761A

    公开(公告)日：1995-07-11

    申请号：US169744

    申请日：1993-12-17

    申请人： Atsushi Maeda

    发明人： Atsushi Maeda

    IPC分类号： G11B11/105 ,  G11B13/04

    CPC分类号： G11B11/10504 ,  G11B11/10517 ,  G11B11/10586

    摘要： The invention provides a medium and a method suitable for magneto-optical and multiple recording.The medium includes alternate thin layers of a magnetic rare-earth metal and an electrically conductive material, and has "magnetic frozen state" at low temperature. The medium may be magnetized to different ferromagnetic states when heated to different temperatures by a controlled laser beam, under an external magnetic field. The different magnetic states permit of multiple recording.

    摘要翻译： 本发明提供适用于磁光和多重记录的介质和方法。 介质包括稀土金属和导电材料的交替薄层，并且在低温下具有“磁冻结状态”。 在外部磁场下，通过受控的激光束将介质加热到不同的温度时，介质可被磁化成不同的铁磁性状态。 不同的磁状态允许多次记录。