Storage unit for elongated elements particularly cigarettes
    1.
    发明授权
    Storage unit for elongated elements particularly cigarettes 失效
    用于细长元件的储存单元特别是香烟

    公开(公告)号:US5746300A

    公开(公告)日:1998-05-05

    申请号:US662495

    申请日:1996-06-13

    摘要: A storage unit for elongated elements, particularly cigarettes, wherein a mass of cigarettes is supported on a first conveyor movable both ways through a loading-unloading station where the first conveyor is connected to a second conveyor by a connecting plate; the first conveyor being defined by a helical conveyor belt presenting at least two longitudinal grooves defining, on the conveyor belt, at least two longitudinal bands, each presenting a respective succession of projections; and the connecting plate presenting a comb-shaped free end connected to the longitudinal grooves of the first conveyor.

    摘要翻译: 一种用于细长元件,特别是香烟的存储单元,其中大量香烟支撑在第一输送器上,所述第一输送器可通过装载 - 卸载站双向移动,其中所述第一输送机通过连接板连接到第二输送机; 所述第一输送机由螺旋输送带限定,所述螺旋输送带具有至少两个纵向槽,所述至少两个纵向槽在所述输送带上限定至少两个纵向带,每个纵向带呈现相应的连续突起; 并且所述连接板具有连接到所述第一输送机的纵向槽的梳状自由端。

    Biasing a phase change memory device
    2.
    发明授权
    Biasing a phase change memory device 有权
    偏置相变存储器件

    公开(公告)号:US07848138B2

    公开(公告)日:2010-12-07

    申请号:US11809702

    申请日:2007-06-01

    IPC分类号: G11C11/00

    摘要: A phase change memory device includes a plurality of cells connected to bitlines and including respective phase change memory elements and cell select devices and an addressing circuit for selectively addressing at least one bitline and one cell connected thereto. A reading column bias circuit supplies a bitline voltage to the addressed bitline and cell. The bitline voltage includes the sum of a safe voltage and a reference select device voltage, wherein the reference voltage is equal to a select device voltage on the select device when a cell current flowing through the phase change memory element and the cell select device is equal to a safe current. The safe voltage and the safe current are such that phase transition of the phase change memory element is prevented in any bias condition including a cell voltage lower than the safe voltage and in any bias condition including the cell current lower than the safe current.

    摘要翻译: 相变存储器件包括连接到位线并包括各自的相变存储器元件和单元选择器件的多个单元以及用于选择性地寻址至少一个位线和连接到其上的一个单元的寻址电路。 读取列偏置电路向寻址的位线和单元提供位线电压。 位线电压包括安全电压和参考选择器件电压的总和,其中当流过相变存储器元件和电池选择器件的电池电流相等时,参考电压等于选择器件上的选择器件电压 到一个安全的电流。 安全电压和安全电流使得在包括电池电压低于安全电压的任何偏压条件下以及包括电池电流低于安全电流的任何偏置条件下,可以防止相变存储元件的相变。

    Biasing a phase change memory device
    3.
    发明申请
    Biasing a phase change memory device 有权
    偏置相变存储器件

    公开(公告)号:US20080298122A1

    公开(公告)日:2008-12-04

    申请号:US11809702

    申请日:2007-06-01

    IPC分类号: G11C11/00

    摘要: A phase change memory device includes a plurality of cells connected to bitlines and including respective phase change memory elements and cell select devices and an addressing circuit for selectively addressing at least one bitline and one cell connected thereto. A reading column bias circuit supplies a bitline voltage to the addressed bitline and cell. The bitline voltage includes the sum of a safe voltage and a reference select device voltage, wherein the reference voltage is equal to a select device voltage on the select device when a cell current flowing through the phase change memory element and the cell select device is equal to a safe current. The safe voltage and the safe current are such that phase transition of the phase change memory element is prevented in any bias condition including a cell voltage lower than the safe voltage and in any bias condition including the cell current lower than the safe current.

    摘要翻译: 相变存储器件包括连接到位线并包括各自的相变存储器元件和单元选择器件的多个单元以及用于选择性地寻址至少一个位线和连接到其上的一个单元的寻址电路。 读取列偏置电路向寻址的位线和单元提供位线电压。 位线电压包括安全电压和参考选择器件电压的总和,其中当流过相变存储器元件和电池选择器件的电池电流相等时,参考电压等于选择器件上的选择器件电压 到一个安全的电流。 安全电压和安全电流使得在包括电池电压低于安全电压的任何偏压条件下以及包括电池电流低于安全电流的任何偏置条件下,可以防止相变存储元件的相变。