摘要:
In an optical communication system with a passive star coupler, measurement between a station and a central node should not interfere with the operation of other stations. Distance measurement is accomplished by determining the echo delay using a wavelength not being used by other stations. The system uses combined wavelength- and time-division multiplexing. One wavelength is always kept free for measurements if possible. For the measurement, the same data format as that employed during normal operation can be used. Measurement can be continuously repeated unchanged during operation.
摘要:
A storage unit for elongated elements, particularly cigarettes, wherein a mass of cigarettes is supported on a first conveyor movable both ways through a loading-unloading station where the first conveyor is connected to a second conveyor by a connecting plate; the first conveyor being defined by a helical conveyor belt presenting at least two longitudinal grooves defining, on the conveyor belt, at least two longitudinal bands, each presenting a respective succession of projections; and the connecting plate presenting a comb-shaped free end connected to the longitudinal grooves of the first conveyor.
摘要:
A phase change memory device includes a plurality of cells connected to bitlines and including respective phase change memory elements and cell select devices and an addressing circuit for selectively addressing at least one bitline and one cell connected thereto. A reading column bias circuit supplies a bitline voltage to the addressed bitline and cell. The bitline voltage includes the sum of a safe voltage and a reference select device voltage, wherein the reference voltage is equal to a select device voltage on the select device when a cell current flowing through the phase change memory element and the cell select device is equal to a safe current. The safe voltage and the safe current are such that phase transition of the phase change memory element is prevented in any bias condition including a cell voltage lower than the safe voltage and in any bias condition including the cell current lower than the safe current.
摘要:
A phase change memory device includes a plurality of cells connected to bitlines and including respective phase change memory elements and cell select devices and an addressing circuit for selectively addressing at least one bitline and one cell connected thereto. A reading column bias circuit supplies a bitline voltage to the addressed bitline and cell. The bitline voltage includes the sum of a safe voltage and a reference select device voltage, wherein the reference voltage is equal to a select device voltage on the select device when a cell current flowing through the phase change memory element and the cell select device is equal to a safe current. The safe voltage and the safe current are such that phase transition of the phase change memory element is prevented in any bias condition including a cell voltage lower than the safe voltage and in any bias condition including the cell current lower than the safe current.