公开(公告)号：US08598040B2

公开(公告)日：2013-12-03

申请号：US13226087

申请日：2011-09-06

申请人： Anne Le Gouil ,  Jeffrey R. Lindain ,  Yasushi Ishikawa ,  Yoko Yamaguchi-Adams

发明人： Anne Le Gouil ,  Jeffrey R. Lindain ,  Yasushi Ishikawa ,  Yoko Yamaguchi-Adams

IPC分类号： H01L21/3065 ,  H01L21/461 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/311 ,  H01L27/115

CPC分类号： H01L21/32137 ,  H01J37/321 ,  H01J37/32816 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582

摘要： A method for etching features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a plasma, while providing a first pressure. A wafer temperature of less than 20° C. is maintained. The pressure is ramped to a second pressure less than the first pressure as the plasma etches through a plurality of the plurality of silicon based bilayers. The flow of the main etch gas is stopped after a first plurality of the plurality of bilayers is etched.

摘要翻译： 提供了一种用于在等离子体处理室中在晶片上形成堆叠的多个硅基双层中蚀刻特征的方法。 主蚀刻气体流入等离子体处理室。 主蚀刻气体形成为等离子体，同时提供第一压力。 保持小于20℃的晶片温度。 当等离子体通过多个多个硅基双层进行蚀刻时，该压力升至小于第一压力的第二压力。 在蚀刻第一多个多层双层之后，停止主蚀刻气体的流动。

公开(公告)号：US20130059450A1

公开(公告)日：2013-03-07

申请号：US13226087

申请日：2011-09-06

申请人： Anne Le Gouil ,  Jeffrey R. Lindain ,  Yasushi Ishikawa ,  Yoko Yamaguchi-Adams

发明人： Anne Le Gouil ,  Jeffrey R. Lindain ,  Yasushi Ishikawa ,  Yoko Yamaguchi-Adams

IPC分类号： H01L21/3065

CPC分类号： H01L21/32137 ,  H01J37/321 ,  H01J37/32816 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582

摘要： A method for etching features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a plasma, while providing a first pressure. A wafer temperature of less than 20° C. is maintained. The pressure is ramped to a second pressure less than the first pressure as the plasma etches through a plurality of the plurality of silicon based bilayers. The flow of the main etch gas is stopped after a first plurality of the plurality of bilayers is etched.

摘要翻译： 提供了一种用于在等离子体处理室中在晶片上形成堆叠的多个硅基双层中蚀刻特征的方法。 主蚀刻气体流入等离子体处理室。 主蚀刻气体形成为等离子体，同时提供第一压力。 保持小于20℃的晶片温度。 当等离子体通过多个多个硅基双层进行蚀刻时，该压力升至小于第一压力的第二压力。 在蚀刻第一多个多层双层之后，停止主蚀刻气体的流动。