公开(公告)号：US20080298061A1

公开(公告)日：2008-12-04

申请号：US12094614

申请日：2006-11-20

申请人： Johannes Wilhelmus Weekamp ,  Willem Hoving ,  Eric Cornelis Egbertus Van Grunsven ,  Piet Christiaan Jozef Van Rens ,  Gerard Maria Janssen

发明人： Johannes Wilhelmus Weekamp ,  Willem Hoving ,  Eric Cornelis Egbertus Van Grunsven ,  Piet Christiaan Jozef Van Rens ,  Gerard Maria Janssen

IPC分类号： F21K7/00 ,  G02B27/00 ,  H01L21/00

CPC分类号： G02B27/145 ,  F21K9/00 ,  F21V29/763 ,  F21Y2113/13 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B27/102 ,  G02B27/1073 ,  G02B27/144 ,  H01S5/4012 ,  H01S5/4025 ,  H04N9/315

摘要： A light emitting module (19), comprising at least one semi-conductor light source (20a-c) capable of emitting light, and a light-modifying member (21) arranged adjacent to the at least one semiconductor light source (20a-c) in a direction of emission of the light. The light-modifying member (21) is formed by a stacked sheet element (21) separated from an integral stacked sheet structure comprising first and second stacked sheets, so that the stacked sheet element (21) includes first and second sheet portions of the first and second stacked sheets, and at least the first sheet portion is configured to modify the emitted light. By providing the light-modifying member as a stacked sheet element which has been separated from an integral stacked sheet structure, batch manufacturing of the light-modifying member and/or the light emitting module is enabled, such that manufacturing steps requiring manual labor, or use of expensive equipment may be performed to produce the integral stacked sheet structure. The costs for these manufacturing steps may then be distributed over a large number of components, thereby reducing manufacturing costs.

摘要翻译： 一种发光模块（19），包括能够发光的至少一个半导体光源（20a-c）和邻近所述至少一个半导体光源（20a-c）布置的光修饰构件（21） ）在光的发射方向上。 光修饰构件（21）由层叠的片状元件（21）形成，所述片状元件（21）与包括第一和第二层叠片材的整体堆叠片状结构分离，使得所述堆叠的片状元件（21）包括第一和第二片状部分 和第二堆叠片材，并且至少第一片材部分被配置为修改发射的光。 通过将光修改构件设置为与整体堆叠的片状结构分离的堆叠的片状元件，能够批量制造光修改构件和/或发光模块，使得需要体力劳动的制造步骤或 可以执行使用昂贵的设备以产生整体堆叠的片材结构。 然后，这些制造步骤的成本可以分布在大量组件上，从而降低制造成本。

公开(公告)号：US08395267B2

公开(公告)日：2013-03-12

申请号：US13126286

申请日：2009-10-21

申请人： Freddy Roozeboom ,  Eric Cornelis Egbertus Van Grunsven ,  Franciscus Hubertus Marie Sanders ,  Maria Mathea Antonetta Burghoorn

发明人： Freddy Roozeboom ,  Eric Cornelis Egbertus Van Grunsven ,  Franciscus Hubertus Marie Sanders ,  Maria Mathea Antonetta Burghoorn

IPC分类号： H01L23/48

CPC分类号： H01L23/49827 ,  H01L21/4846 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/14181 ,  H01L2924/1301 ,  H01L2924/1461 ,  H01L2924/00

摘要： A semiconductor device and a method for manufacturing such semiconductor device for use in a stacked configuration of the semiconductor device are disclosed. The semiconductor device includes a substrate including at least part of an electronic circuit provided at a first side thereof. The substrate includes a passivation layer and a substrate via that extends from the first side to a via depth such that it is reconfigurable into a through-substrate. The semiconductor device further includes a patterned masking layer on the first side of the substrate. The patterned masking layer includes a trench extending fully through the patterned masking layer. The trench has been filled with a redistribution conductor. The substrate via and the redistribution conductor include metal paste and together form one piece, such that there is no physical interface between the through-substrate via and the redistribution conductor. Thus, the parasitic resistance of this electrical connection is reduced.

摘要翻译： 公开了一种半导体器件和用于制造用于半导体器件的层叠结构的半导体器件的方法。 半导体器件包括：基板，其包括设置在其第一侧的电子电路的至少一部分。 衬底包括从第一侧延伸到通孔深度的钝化层和衬底通孔，使得其可重构成通过衬底。 半导体器件还包括在衬底的第一侧上的图案化掩模层。 图案化掩模层包括完全延伸穿过图案化掩模层的沟槽。 沟槽已经填满了再分配导体。 衬底通孔和再分布导体包括金属膏，并且一起形成一片，使得在贯穿衬底通孔和再分布导体之间不存在物理界面。 因此，该电连接的寄生电阻减小。

公开(公告)号：US20110210452A1

公开(公告)日：2011-09-01

申请号：US13126286

申请日：2009-10-21

申请人： Freddy Roozeboom ,  Eric Cornelis Egbertus Van Grunsven ,  Franciscus Hubertus Marie Sanders ,  Maria Mathea Antonetta Burghoorn

发明人： Freddy Roozeboom ,  Eric Cornelis Egbertus Van Grunsven ,  Franciscus Hubertus Marie Sanders ,  Maria Mathea Antonetta Burghoorn

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/49827 ,  H01L21/4846 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/14181 ,  H01L2924/1301 ,  H01L2924/1461 ,  H01L2924/00

摘要： The invention relates to a semiconductor device for use in a stacked configuration of the semiconductor device and a further semiconductor device. The semiconductor device comprises: a substrate (5) comprising at least part of an electronic circuit (7) provided at a first side thereof. The substrate (5) comprises a passivation layer (19) at the first side and a substrate via that extends from the first side to a via depth beyond a depth of the electronic circuit (7) such that it is reconfigurable into a through-substrate via (10) by backside thinning of the substrate (5). The semiconductor device further comprises: a patterned masking layer (15) on the first side of the substrate (5). The patterned masking layer (15) comprises at least a trench (16) extending fully through the patterned masking layer (15). The trench has been filled with a redistribution conductor (20). The substrate via and the redistribution conductor (20) comprise metal paste (MP) and together form one piece. The effect of the features of the semi-conductor device of the invention is that there is no physical interface between those the through-substrate via (10) and the redistribution conductor (20). As a consequence of the invention the parasitic resistance of this electrical connection is reduced, which results in a better electrical performance of the semiconductor device. The invention further relates to a method of manufacturing such semiconductor device. And the invention relates to a semiconductor assembly comprising a stacked configuration of a plurality of such semiconductor devices.

摘要翻译： 本发明涉及一种用于半导体器件和另一半导体器件的叠层结构的半导体器件。 半导体器件包括：衬底（5），其包括设置在其第一侧的电子电路（7）的至少一部分。 衬底（5）包括在第一侧处的钝化层（19）和衬底通孔，其从第一侧延伸到超过电子电路（7）的深度的通孔深度，使得其可重新配置成贯穿衬底 通过（10）通过衬底（5）的背面变薄。 半导体器件还包括：在衬底（5）的第一侧上的图案化掩模层（15）。 图案化掩模层（15）包括至少一个完全延伸穿过图案化掩模层（15）的沟槽（16）。 沟槽已经填充有再分布导体（20）。 衬底通孔和再分布导体（20）包括金属膏（MP）并且一起形成一片。 本发明的半导体器件的特征的效果在于通孔（10）和再分布导体（20）之间没有物理界面。 作为本发明的结果，该电连接的寄生电阻降低，这导致半导体器件的更好的电性能。 本发明还涉及制造这种半导体器件的方法。 本发明涉及包括多个这样的半导体器件的叠层结构的半导体组件。

公开(公告)号：US20080280435A1

公开(公告)日：2008-11-13

申请号：US12092605

申请日：2006-11-03

申请人： Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Ronald Dekker ,  Eric Cornelis Egbertus Van Grunsven ,  Freddy Roozeboom

发明人： Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Ronald Dekker ,  Eric Cornelis Egbertus Van Grunsven ,  Freddy Roozeboom

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/764 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer

摘要翻译： 本发明涉及一种制造具有至少一个覆盖通孔的基板的方法，所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。 所述处理涉及在第一基板侧上形成沟槽，并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。 本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。根据本发明的第一方面，通过提供衬底沟槽 具有孔的外涂层。 外涂层中的孔留下去除盖层材料的分解产物的空间。 根据本发明的第二方面，从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。 本发明的两种方法都是基于即使在基板开口被永久覆盖之前使用临时盖层的常见思想，在移除临时盖层之前

公开(公告)号：US20080278061A1

公开(公告)日：2008-11-13

申请号：US11570906

申请日：2005-06-23

申请人： Marc Andre De Samber ,  Christoph Gerard August Hoelen ,  Eric Cornelis Egbertus Van Grunsven ,  Koen Van Os

发明人： Marc Andre De Samber ,  Christoph Gerard August Hoelen ,  Eric Cornelis Egbertus Van Grunsven ,  Koen Van Os

IPC分类号： H01L33/00

CPC分类号： H01L25/167 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2224/0401

摘要： The present invention relates to a LED module (10) comprising a substrate (12), at least one LED chip (20) mounted on a first side of said substrate, and an optical element (21) covering the LED chip(s) (20). The substrate (12) is further provided with at least one via channel (22) extending from the first side of the substrate to a second opposite side of the substrate, whereby the via channel(s) is provided with conducting means for electrically connecting the at least one LED chip (20) to a control circuit (32). By providing the substrate with via channels with conducting means, the control circuit may be connected at the second side (the bottom side) or at the edge of the substrate. Thus, no top mounted electrical interface is required from the substrate, which is advantageous with respect to miniaturization, light emission, etcetera.

摘要翻译： 本发明涉及一种LED模块（10），其包括基板（12），安装在所述基板的第一侧上的至少一个LED芯片（20）和覆盖所述LED芯片的光学元件（21） 20）。 衬底（12）还设置有从衬底的第一侧延伸到衬底的第二相对侧的至少一个通孔（22），由此通孔通道设置有用于电连接 至少一个LED芯片（20）连接到控制电路（32）。 通过为基板提供具有导电装置的通孔，控制电路可以在基板的第二侧（底侧）或边缘处连接。 因此，从衬底不需要顶部安装的电接口，这对于小型化，发光等是有利的。

公开(公告)号：US20080186550A1

公开(公告)日：2008-08-07

申请号：US11814001

申请日：2006-01-10

申请人： Mark Theo Meuwese ,  Diederik Van Lierop ,  Ronald Jan Asjes ,  Gerardus L.M. Jansen ,  Eric Cornelis Egbertus Van Grunsven ,  Dannis Michel Brouwer

发明人： Mark Theo Meuwese ,  Diederik Van Lierop ,  Ronald Jan Asjes ,  Gerardus L.M. Jansen ,  Eric Cornelis Egbertus Van Grunsven ,  Dannis Michel Brouwer

IPC分类号： G02B26/08

CPC分类号： G02B26/0841 ,  B81B3/0062

摘要： The invention relates to a micro electromechanical device (1′) for tilting a body (2) in two degrees of freedom comprising a carrier element (3) and a membrane (4), the body (2) being connected via the membrane (4) to the carrier element (3), wherein the body (2) and the carrier element (3) each comprise at least one electrode (5,6). The body (2) is tilted by means of electrostatic forces (7) between the at least one electrode (5) of the body (2) and the at least one electrode (6) of the carrier element (3) by an application of a voltage (V1,V2) to said electrodes (5,6) from a voltage source.

摘要翻译： 本发明涉及一种用于在包括载体元件（3）和膜（4）的两个自由度上倾斜主体（2）的微机电装置（1'），所述主体（2）通过膜（4）连接 ）到所述载体元件（3），其中所述主体（2）和所述载体元件（3）各自包括至少一个电极（5,6）。 主体（2）通过施加主体（2）的至少一个电极（5）与载体元件（3）的至少一个电极（6）之间的静电力（7）倾斜， 从电压源到所述电极（5,6）的电压（V SUB 1，V 2）。

公开(公告)号：US07704881B2

公开(公告)日：2010-04-27

申请号：US12092605

申请日：2006-11-03

申请人： Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Ronald Dekker ,  Eric Cornelis Egbertus Van Grunsven ,  Freddy Roozeboom

发明人： Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Ronald Dekker ,  Eric Cornelis Egbertus Van Grunsven ,  Freddy Roozeboom

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L21/764 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer. This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer.

摘要翻译： 本发明涉及一种制造具有至少一个覆盖通孔的基板的方法，所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。 所述处理涉及在第一基板侧上形成沟槽，并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。 本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。 根据本发明的第一方面，这是通过为基底沟槽提供具有孔的外涂层而实现的。 外涂层中的孔留下去除盖层材料的分解产物的空间。 根据本发明的第二方面，从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。 本发明的两种方法都是基于即使在去除临时盖层之前基材开口被永久地覆盖的情况下使用临时盖层的常见思想。

公开(公告)号：US20080265348A1

公开(公告)日：2008-10-30

申请号：US11570248

申请日：2005-05-12

申请人： Joris Maas ,  Leendert De Bruin ,  Daniel Wilhelmus Elisabeth Verbugt ,  Nicolaas Johannes Anthonius Van Veen ,  Eric Cornelis Egbertus Van Grunsven ,  Gerardus Lubertus Jacobus Reuvers ,  Erik Harold Groot

发明人： Joris Maas ,  Leendert De Bruin ,  Daniel Wilhelmus Elisabeth Verbugt ,  Nicolaas Johannes Anthonius Van Veen ,  Eric Cornelis Egbertus Van Grunsven ,  Gerardus Lubertus Jacobus Reuvers ,  Erik Harold Groot

IPC分类号： H01L31/0232 ,  H01L21/86

CPC分类号： H01L31/02162 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02327

摘要： A method of manufacturing a back-side (14) illuminated image sensor (1) is disclosed, comprising the steps of: starting with a wafer (2) having a first (3) and a second surface (4), providing light sensitive pixel regions (5) extending into the wafer (2) from the first surface (3), securing the wafer (2) onto a protective substrate (7) such that the first surface (3) faces the protective substrate, the wafer comprising a substrate of a first material (8) with an optical transparent layer (9) and a layer of semiconductor material (10), wherein the substrate (8) is selectively removed from the layer of semiconductor material by using the optical transparent layer (9) as stopping layer. For back-side illuminated image sensors, light has to transmit through the semiconductor layer and enter into the light sensitive pixel regions (5). In order to reduce absorption losses, it is very advantageous that the semiconductor layer (10) can be made relatively thin with a good uniformity. Because of the reduced thickness of the semiconductor layer, more light can enter into the light sensitive regions, resulting in an improved efficiency of the image sensor.

摘要翻译： 公开了一种制造背面（14）照明图像传感器（1）的方法，包括以下步骤：从具有第一（3）和第二表面（4）的晶片（2）开始，提供光敏像素 从所述第一表面（3）延伸到所述晶片（2）中的区域（5），将所述晶片（2）固定到保护衬底（7）上，使得所述第一表面（3）面向所述保护衬底，所述晶片包括衬底 具有光学透明层（9）和半导体材料层（10）的第一材料（8），其中通过使用光学透明层（9）作为选择性地从半导体材料层中去除基板（8） 停止层。 对于背面照明图像传感器，光必须透过半导体层并进入光敏像素区域（5）。 为了减少吸收损失，非常有利的是，半导体层（10）可以制成相对较薄并具有良好的均匀性。 由于半导体层的厚度减小，更多的光可以进入光敏区域，从而提高了图像传感器的效率。