公开(公告)号：US20060027803A1

公开(公告)日：2006-02-09

申请号：US10910673

申请日：2004-08-03

申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen

发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L27/1292

摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.

摘要翻译： 本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。 通过（a）制备包含至少一种具有至少一个有机基团的含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用该组合物涂覆基材以在基材上形成膜，（c）通过在约250℃或更低的温度下加热该组合物约30分钟或更短时间来交联该组合物，以产生基本上裂纹 该硅聚合物的有机基团与SiO基的重量比为约0.15:1或更高，并且含硅聚合物膜的场击穿电压为约2.5MV / cm，或者 在约400nm至约700nm的范围内的光的透明度为约95％或更高。

公开(公告)号：US20140227538A1

公开(公告)日：2014-08-14

申请号：US10495686

申请日：2002-11-12

申请人： Teresa Baldwin ,  Joseph Kennedy ,  Nancy Iwamoto ,  Tadashi Nakano ,  William Bedwell ,  Jason Stuck ,  Arlene Suedmeyer ,  Mello Hebert

发明人： Teresa Baldwin ,  Joseph Kennedy ,  Nancy Iwamoto ,  Tadashi Nakano ,  William Bedwell ,  Jason Stuck ,  Arlene Suedmeyer ,  Mello Hebert

IPC分类号： G02B5/23 ,  B32B9/04

CPC分类号： G02B5/23 ,  C03C17/008 ,  C03C17/30 ,  C08G77/04 ,  C08G77/12 ,  C08K5/0008 ,  C09D183/04 ,  C09D183/06 ,  C09D183/08 ,  G03F7/091 ,  H01L21/0276 ,  Y10T428/31663 ,  C08L83/04 ,  C08L2666/28

摘要： Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds

摘要翻译： 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种封端剂，至少一种流平剂， 至少一种催化剂，至少一种替代溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物

公开(公告)号：US20060035419A1

公开(公告)日：2006-02-16

申请号：US11192352

申请日：2005-07-29

申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen ,  Peter Smith ,  Jinghong Chen

发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen ,  Peter Smith ,  Jinghong Chen

IPC分类号： H01L21/84 ,  H01L21/31

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L27/1292

摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.

摘要翻译： 本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。 通过（a）制备包含至少一种含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用所述组合物涂覆基材以在基材上形成膜，（c）通过加热使组合物交联以产生基本上无裂纹且基本上无空隙的硅聚合物膜，其具有在 约400nm至约800nm约95％或更多。

公开(公告)号：US20060008659A1

公开(公告)日：2006-01-12

申请号：US10886247

申请日：2004-07-07

申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Denis Endisch ,  Paul Apen ,  Brian Daniels ,  Deling Zhou ,  Ananth Naman

发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Denis Endisch ,  Paul Apen ,  Brian Daniels ,  Deling Zhou ,  Ananth Naman

IPC分类号： B32B13/04

CPC分类号： H01L21/02118 ,  H01L21/02318 ,  H01L21/3105 ,  H01L21/316

摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

摘要翻译： 本发明涉及半导体器件制造，更具体地涉及一种用于在能够承受湿蚀刻处理的集成电路中形成高密度浅沟槽隔离结构的方法和材料。 在基板上形成石英电介质膜。 二氧化硅电介质膜的密度为约1.0至约2.3g / ml，SiC：SiO键比为约0.015或更大，介电常数为约4.0或更小，击穿电压为约2MV / cm以上 ，并且在100:1体积比的水和氟化氢的混合物中具有约30 /分钟或更少的湿蚀刻电阻。