公开(公告)号：US20060027803A1

公开(公告)日：2006-02-09

申请号：US10910673

申请日：2004-08-03

申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen

发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L27/1292

摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.

摘要翻译： 本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。 通过（a）制备包含至少一种具有至少一个有机基团的含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用该组合物涂覆基材以在基材上形成膜，（c）通过在约250℃或更低的温度下加热该组合物约30分钟或更短时间来交联该组合物，以产生基本上裂纹 该硅聚合物的有机基团与SiO基的重量比为约0.15:1或更高，并且含硅聚合物膜的场击穿电压为约2.5MV / cm，或者 在约400nm至约700nm的范围内的光的透明度为约95％或更高。

公开(公告)号：US20060035419A1

公开(公告)日：2006-02-16

申请号：US11192352

申请日：2005-07-29

申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen ,  Peter Smith ,  Jinghong Chen

发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Paul Apen ,  Peter Smith ,  Jinghong Chen

IPC分类号： H01L21/84 ,  H01L21/31

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L27/1292

摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.

摘要翻译： 本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。 通过（a）制备包含至少一种含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用所述组合物涂覆基材以在基材上形成膜，（c）通过加热使组合物交联以产生基本上无裂纹且基本上无空隙的硅聚合物膜，其具有在 约400nm至约800nm约95％或更多。

公开(公告)号：US20060008659A1

公开(公告)日：2006-01-12

申请号：US10886247

申请日：2004-07-07

申请人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Denis Endisch ,  Paul Apen ,  Brian Daniels ,  Deling Zhou ,  Ananth Naman

发明人： Victor Lu ,  Lei Jin ,  Arlene Suedmeyer ,  Denis Endisch ,  Paul Apen ,  Brian Daniels ,  Deling Zhou ,  Ananth Naman

IPC分类号： B32B13/04

CPC分类号： H01L21/02118 ,  H01L21/02318 ,  H01L21/3105 ,  H01L21/316

摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

摘要翻译： 本发明涉及半导体器件制造，更具体地涉及一种用于在能够承受湿蚀刻处理的集成电路中形成高密度浅沟槽隔离结构的方法和材料。 在基板上形成石英电介质膜。 二氧化硅电介质膜的密度为约1.0至约2.3g / ml，SiC：SiO键比为约0.015或更大，介电常数为约4.0或更小，击穿电压为约2MV / cm以上 ，并且在100:1体积比的水和氟化氢的混合物中具有约30 /分钟或更少的湿蚀刻电阻。

公开(公告)号：US20060051929A1

公开(公告)日：2006-03-09

申请号：US10934068

申请日：2004-09-03

申请人： Lei Jin ,  Victor Lu ,  Wenya Fan ,  Paul Apen

发明人： Lei Jin ,  Victor Lu ,  Wenya Fan ,  Paul Apen

IPC分类号： H01L21/76

CPC分类号： H01L21/02129 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76224

摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits having improved electrical properties. A silica dielectric film is formed on a substrate (a) preparing a composition comprising a silicon containing pre-polymer, a metal-ion-free catalyst, and optionally water; (b) coating a substrate with the composition to form a film, (c) crosslinking the composition by first heating the composition in a nitrogen atmosphere at a temperature of from about 750° C. to about 850° C. for from about 30 minutes to about 120 minutes; and thereafter heating the composition in an oxygen atmosphere at a temperature of from about 850° C. to about 1000° C. for from about 30 minutes to about 120 minutes, effective to produce a substantially crack-free, and substantially void-free silica dielectric film having a density of from about 1.8 to about 2.3 g/ml, a dielectric constant of about 4.0 or less, a breakdown voltage of about 3 MV/cm or more.

摘要翻译： 本发明涉及半导体器件制造，更具体地涉及在具有改进的电性能的集成电路中形成高密度浅沟槽隔离结构的方法和材料。 在基材（a）上形成二氧化硅电介质膜，制备包含含硅预聚物，不含金属离子的催化剂和任选的水的组合物; （b）用组合物涂覆基材以形成膜，（c）通过在氮气气氛中在约750℃至约850℃的温度下首先加热该组合物约30分钟来交联该组合物 至约120分钟; 然后在氧气氛中在约850℃至约1000℃的温度下加热组合物约30分钟至约120分钟，有效地产生基本上无裂纹且基本上无空隙的二氧化硅 绝缘膜的密度为约1.8至约2.3g / ml，介电常数为约4.0或更小，击穿电压为约3MV / cm以上。

公开(公告)号：US07915181B2

公开(公告)日：2011-03-29

申请号：US10543347

申请日：2004-01-26

申请人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

发明人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

IPC分类号： H01L21/31

CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

摘要翻译： 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

公开(公告)号：US07015061B2

公开(公告)日：2006-03-21

申请号：US10910673

申请日：2004-08-03

申请人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Paul G. Apen

发明人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Paul G. Apen

IPC分类号： H01L21/00

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L27/1292

摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.

摘要翻译： 本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。 通过（a）制备包含至少一种具有至少一个有机基团的含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用该组合物涂覆基材以在基材上形成膜，（c）通过在约250℃或更低的温度下加热该组合物约30分钟或更短时间来交联该组合物，以产生基本上裂纹 该硅聚合物的有机基团与SiO基的重量比为约0.15:1或更高，并且含硅聚合物膜的场击穿电压为约2.5MV / cm，或者 在约400nm至约700nm的范围内的光的透明度为约95％或更高。

公开(公告)号：US20050239264A1

公开(公告)日：2005-10-27

申请号：US10829048

申请日：2004-04-21

申请人： Lei Jin ,  Victor Lu ,  Ananth Naman

发明人： Lei Jin ,  Victor Lu ,  Ananth Naman

IPC分类号： C23C18/12 ,  H01L21/00 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/02211 ,  C23C18/06 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1254 ,  C23C18/1283 ,  H01L21/02318 ,  H01L21/316 ,  H01L21/76227

摘要： The invention relates to semiconductor device fabrication and more specifically to a method and material for forming of shallow trench isolation structures in integrated circuits. A silica dielectric film is formed by preparing a composition comprising a silicon containing pre-polymer, optionally water, and optionally a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles. The substrate is then coated with the composition to form a film. The film is then crosslinked to produce a gelled film. The gelled film is then heated at a temperature of from about 750° C. to about 1000° C. for a duration effective to remove substantially all organic moieties and to produce a substantially crack-free silica dielectric film.

摘要翻译： 本发明涉及半导体器件制造，更具体地涉及用于在集成电路中形成浅沟槽隔离结构的方法和材料。 通过制备包含含硅预聚物，任选的水和任选的选自鎓化合物和亲核试剂的金属离子的催化剂的组合物来形成二氧化硅介电膜。 然后用该组合物涂覆基材以形成膜。 然后将膜交联以产生凝胶膜。 然后将凝胶膜在约750℃至约1000℃的温度下加热，持续时间有效地除去基本上所有的有机部分并产生基本上无裂纹的二氧化硅介电膜。

公开(公告)号：US07445953B2

公开(公告)日：2008-11-04

申请号：US11192352

申请日：2005-07-29

申请人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Paul G. Apen ,  Peter Alfred Smith ,  JingHong Chen

发明人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Paul G. Apen ,  Peter Alfred Smith ,  JingHong Chen

IPC分类号： H01L21/22

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L27/1292

摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.

摘要翻译： 本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。 通过（a）制备包含至少一种含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用所述组合物涂覆基材以在基材上形成膜，（c）通过加热使组合物交联以产生基本上无裂纹且基本上无空隙的硅聚合物膜，其具有在 约400nm至约800nm约95％或更多。

公开(公告)号：US07153783B2

公开(公告)日：2006-12-26

申请号：US10886247

申请日：2004-07-07

申请人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Denis H. Endisch ,  Paul G. Apen ,  Brian J. Daniels ,  Deling Zhou ,  Ananth Naman

发明人： Victor Lu ,  Lei Jin ,  Arlene J. Suedmeyer ,  Denis H. Endisch ,  Paul G. Apen ,  Brian J. Daniels ,  Deling Zhou ,  Ananth Naman

IPC分类号： H01L21/31

CPC分类号： H01L21/02118 ,  H01L21/02318 ,  H01L21/3105 ,  H01L21/316

摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

公开(公告)号：US20060141641A1

公开(公告)日：2006-06-29

申请号：US10543347

申请日：2004-01-26

申请人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

发明人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

IPC分类号： H01L21/00 ,  H01L21/31

CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

摘要翻译： 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。