公开(公告)号：US6015759A

公开(公告)日：2000-01-18

申请号：US986916

申请日：1997-12-08

申请人： Ashraf R. Khan ,  Sasangan Ramanathan ,  Giovanni Antonio Foggiato

发明人： Ashraf R. Khan ,  Sasangan Ramanathan ,  Giovanni Antonio Foggiato

IPC分类号： H01L21/76 ,  C23C16/02 ,  H01L21/304 ,  H01L21/31 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/00

CPC分类号： H01L21/02164 ,  C23C16/0236 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/31612 ,  H01L21/76232 ,  H01L21/31625 ,  H01L21/31662

摘要： Deposition rates of undoped silicate glass dielectric layers on thermal oxide are increased by pre-treating the thermal oxide layer with electromagnetic radiation in the ultraviolet (UV) and/or vacuum ultraviolet (VUV) wavelengths. The surface smoothness of the resulting films are also increased by pre-treating films with UV and/or VUV radiation. Furthermore, the gap filling abilities of the undoped silicate glass films are increased by pre-treating the thermal oxide with UV and/or VUV radiation. New equipment and methods are presented for exposing semiconductor devices to UV and/or VUV radiation, and for enhancing the deposition rates and film quality for semiconductor manufacture. Semiconductor devices incorporating the new methods are also described.

摘要翻译： 通过在紫外（UV）和/或真空紫外（VUV）波长中的电磁辐射预处理热氧化物层，增加了热氧化物上未掺杂的硅酸盐玻璃介电层的沉积速率。 通过用UV和/或VUV辐射预处理膜，所得膜的表面光滑度也增加。 此外，通过用UV和/或VUV辐射预处理热氧化物来增加未掺杂的硅酸盐玻璃膜的间隙填充能力。 提出了用于将半导体器件暴露于UV和/或VUV辐射的新设备和方法，并且用于提高用于半导体制造的沉积速率和膜质量。 还描述了结合新方法的半导体器件。

公开(公告)号：US6049086A

公开(公告)日：2000-04-11

申请号：US022507

申请日：1998-02-12

申请人： Giovanni Antonio Foggiato ,  Leonid V. Velikov ,  Ralph F. Manriquez ,  Ashraf R. Khan

发明人： Giovanni Antonio Foggiato ,  Leonid V. Velikov ,  Ralph F. Manriquez ,  Ashraf R. Khan

IPC分类号： H01J65/00 ,  G03F7/20 ,  H01J61/067 ,  H01J61/26 ,  H01J61/30 ,  H01J61/52 ,  H01J65/04 ,  H01J17/38

CPC分类号： H01J65/046 ,  G03F7/70016 ,  H01J61/0672 ,  H01J61/26 ,  H01J61/305 ,  H01J61/526 ,  H05H1/2406 ,  H05H2001/2418 ,  H05H2001/2437

摘要： Ultraviolet and vacuum ultraviolet radiators for use in the manufacture of semiconductors are provided which have improved lifetimes, improved distribution of radiation generation, improved distribution of emitted radiation, increased efficiency of radiation emission, and improved means for cooling. The radiators have novel electrodes, novel electrode configurations, novel means for distributing plasmas between electrodes, and have novel cooling means. These features enable the miniaturization of the radiators permitting high-intensity and uniform radiation exposure of planar surfaces. The radiators are used in the pre-treatment of semiconductor surfaces, the deposition of semiconductor thin films, and the post-deposition processing of semiconductor thin films.

摘要翻译： 提供用于制造半导体的紫外线和真空紫外线辐射器，其具有改善的寿命，改善辐射产生的分布，改善发射辐射的分布，提高辐射发射的效率和改进的冷却装置。 散热器具有新颖的电极，新颖的电极结构，用于在电极之间分配等离子体的新颖手段，并具有新的冷却装置。 这些特征使得散热器的小型化允许平面表面的高强度和均匀的辐射曝光。 散热器用于半导体表面的预处理，半导体薄膜的沉积以及半导体薄膜的后沉积处理。