公开(公告)号：US09024296B2

公开(公告)日：2015-05-05

申请号：US14147716

申请日：2014-01-06

Applicant: Mani Sundaram ,  Axel Reisinger

Inventor： Mani Sundaram ,  Axel Reisinger

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/1463 ,  H01L27/14683 ,  H01L31/022408 ,  H01L31/035236 ,  H01L31/109

Abstract: Pixels in a focal plane array are defined by controlled variation of the Fermi energy at the surface of the detector array. Varying the chemical composition of the semiconductor at the detector surface produces a corresponding variation in the surface Fermi energy which produces a corresponding variation in the electric field and electrostatic potential in the bulk semiconductor below the surface. This defines pixels by having one Fermi energy at the surface of each pixel and a different Fermi energy at the surface between pixels. Fermi energy modulation can also be controlled by applying an electrostatic potential voltage V1 to the metal pad defining each pixel, and applying a different electrostatic potential voltage V2 to an interconnected metal grid covering the gaps between all the pixel metal pads. Methods obviate the need to etch deep trenches between pixels, resulting in a more manufacturable quasi-planar process without sacrificing performance.

Abstract translation: 焦平面阵列中的像素由检测器阵列表面上的费米能量的受控变化来定义。 在检测器表面上改变半导体的化学成分在表面上产生相应的表面费米能量的变化，其产生在表面下方的体半导体中的电场和静电电位的相应变化。 这通过在每个像素的表面具有一个费米能量并且在像素之间的表面处具有不同的费米能量来限定像素。 还可以通过将静电电位电压V1施加到限定每个像素的金属焊盘，并且将不同的静电电位电压V2施加到覆盖所有像素金属焊盘之间的间隙的互连金属栅格来控制费米能量调制。 方法避免了蚀刻像素之间的深沟槽的需要，导致更可制造的准平面过程而不牺牲性能。

公开(公告)号：US20140191195A1

公开(公告)日：2014-07-10

申请号：US14147716

申请日：2014-01-06

Applicant: Mani Sundaram ,  Axel Reisinger

Inventor： Mani Sundaram ,  Axel Reisinger

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/1463 ,  H01L27/14683 ,  H01L31/022408 ,  H01L31/035236 ,  H01L31/109

Abstract: Pixels in a focal plane array are defined by controlled variation of the Fermi energy at the surface of the detector array. Varying the chemical composition of the semiconductor at the detector surface produces a corresponding variation in the surface Fermi energy which produces a corresponding variation in the electric field and electrostatic potential in the bulk semiconductor below the surface. This defines pixels by having one Fermi energy at the surface of each pixel and a different Fermi energy at the surface between pixels. Fermi energy modulation can also be controlled by applying an electrostatic potential voltage V1 to the metal pad defining each pixel, and applying a different electrostatic potential voltage V2 to an interconnected metal grid covering the gaps between all the pixel metal pads. Methods obviate the need to etch deep trenches between pixels, resulting in a more manufacturable quasi-planar process without sacrificing performance.

Abstract translation: 焦平面阵列中的像素由检测器阵列表面上的费米能量的受控变化来定义。 在检测器表面上改变半导体的化学成分在表面上产生相应的表面费米能量的变化，其产生在表面下方的体半导体中的电场和静电电位的相应变化。 这通过在每个像素的表面具有一个费米能量并且在像素之间的表面处具有不同的费米能量来限定像素。 还可以通过将静电电位电压V1施加到限定每个像素的金属焊盘，并且将不同的静电电位电压V2施加到覆盖所有像素金属焊盘之间的间隙的互连金属栅格来控制费米能量调制。 方法避免了蚀刻像素之间的深沟槽的需要，导致更可制造的准平面过程而不牺牲性能。

公开(公告)号：US20070138461A1

公开(公告)日：2007-06-21

申请号：US11675653

申请日：2007-02-16

Applicant: Mani Sundaram ,  Axel Reisinger

Inventor： Mani Sundaram ,  Axel Reisinger

IPC: H01L31/00

CPC classification number: H01L31/101 ,  B82Y20/00 ,  H01L29/155 ,  H01L31/03046 ,  H01L31/035236 ,  Y02E10/544

Abstract: A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving responsivity. A graded collector barrier may also be included for reverse bias applications. The configuration operates to eliminate or otherwise reduce image artifacts or persistence associated with dielectric relaxation effect in low-background applications.

Abstract translation: 公开了一种QWIP结构，其包括分级发射器屏障，并且还可以配置有阻挡的超晶格微型磁带。 分级发射器屏障有效地操作以将暗电子发射到有源量子阱区域中，从而提高响应度。 也可以包括渐变收集器屏障用于反向偏置应用。 该配置用于消除或以其他方式减少与低背景应用中的介电弛豫效应相关联的图像伪影或持久性。

公开(公告)号：US10943943B2

公开(公告)日：2021-03-09

申请号：US16441581

申请日：2019-06-14

Applicant: Mani Sundaram ,  Axel Reisinger

Inventor： Mani Sundaram ,  Axel Reisinger

IPC: H01L27/146 ,  H04N5/33 ,  G01J5/00 ,  G01N21/35 ,  G01N21/3504

Abstract: A semiconductor gas imaging device system and method includes one chip dual band Type II Superlattice (T2SL) detectors comprising two back to back diodes wherein the bias is flipped. Embodiment voltages are +1V to −1V. For embodiments, only the detector with negative voltage detects incoming infrared radiation.

公开(公告)号：US20200328246A1

公开(公告)日：2020-10-15

申请号：US16441581

申请日：2019-06-14

Applicant: Mani Sundaram ,  Axel Reisinger

Inventor： Mani Sundaram ,  Axel Reisinger

IPC: H01L27/146 ,  H04N5/33 ,  G01N21/3504 ,  G01J5/00

Abstract: A semiconductor gas imaging device system and method includes one chip dual band Type II Superlattice (T2SL) detectors comprising two back to back diodes wherein the bias is flipped. Embodiment voltages are +1V to −1V. For embodiments, only the detector with negative voltage detects incoming infrared radiation.

公开(公告)号：US06970279B2

公开(公告)日：2005-11-29

申请号：US10698877

申请日：2003-10-30

Applicant: John S. Ahearn ,  Mani Sundaram ,  Axel Reisinger

Inventor： John S. Ahearn ,  Mani Sundaram ,  Axel Reisinger

IPC: G02B6/35 ,  G02F1/01 ,  G02F1/017 ,  G02F1/29 ,  G02F1/295 ,  H01S3/00 ,  H01S5/00 ,  H01S5/40

CPC classification number: B82Y20/00 ,  G02F1/017 ,  G02F1/01725 ,  G02F1/292 ,  G02F1/2955 ,  G02F2001/01758 ,  G02F2001/01775 ,  G02F2201/30 ,  G02F2201/305 ,  G02F2202/101 ,  G02F2203/50 ,  H01S3/005 ,  H01S5/005 ,  H01S5/4075

Abstract: The present invention relates to an optical modulator array that uses stepped-well continuously tunable quantum well infrared modulators in order to accomplish electronic beam modulating. The present invention involves a coherent optical beam modulating device to steer an optical beam comprising: an optical modulator array, where said optical modulator array includes a stepped quantum well doped with electrons, wherein the modulator array affects operates as at least one of a phase modulator and a light intensity modulator base upon a voltage bias applied across the modulator array. The continuous tunable quantum well modulator includes asymmetry of the unit cell that allows transitions from the ground state to the second excited state that are normally forbidden in symmetrical quantum well infrared photodetectors.

Abstract translation: 本发明涉及一种使用阶梯式井连续可调量子阱红外调制器以实现电子束调制的光调制器阵列。 本发明涉及一种用于转向光束的相干光束调制装置，包括：光调制器阵列，其中所述光调制器阵列包括掺杂有电子的阶梯量子阱，其中所述调制器阵列影响作为相位调制器 以及基于施加在调制器阵列上的电压偏置的光强度调制器。 连续可调量子阱调制器包括允许在对称量子阱红外光电探测器中通常被禁止的从基态到第二激发态的跃迁的单位电池的不对称性。

公开(公告)号：US20050205857A1

公开(公告)日：2005-09-22

申请号：US10803295

申请日：2004-03-18

Applicant: Mani Sundaram ,  Axel Reisinger

Inventor： Mani Sundaram ,  Axel Reisinger

IPC: H01L29/06 ,  H01L29/15 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/101

CPC classification number: H01L31/101 ,  B82Y20/00 ,  H01L29/155 ,  H01L31/03046 ,  H01L31/035236 ,  Y02E10/544

Abstract: A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving responsivity. A graded collector barrier may also be included for reverse bias applications. The configuration operates to eliminate or otherwise reduce image artifacts or persistence associated with dielectric relaxation effect in low-background applications.

Abstract translation: 公开了一种QWIP结构，其包括分级发射器屏障，并且还可以配置有阻挡的超晶格微型磁带。 分级发射器屏障有效地操作以将暗电子发射到有源量子阱区域中，从而提高响应度。 也可以包括渐变收集器屏障用于反向偏置应用。 该配置用于消除或以其他方式减少与低背景应用中的介电弛豫效应相关联的图像伪影或持久性。