公开(公告)号：US09871152B2

公开(公告)日：2018-01-16

申请号：US14399018

申请日：2012-10-15

申请人： Aya Nishiyama ,  Hiroyuki Fuchigami ,  Hidetada Tokioka

发明人： Aya Nishiyama ,  Hiroyuki Fuchigami ,  Hidetada Tokioka

IPC分类号： H01L31/0236 ,  H01L31/0747 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/02168 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/186 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： To provide a solar cell that reduces occurrence of a defect and has high photoelectric conversion efficiency. The solar cell includes a silicon substrate such as an n-type single-crystal silicon substrate single crystal with pyramid-shaped irregularities P formed thereon, and an amorphous or microcrystal semiconductor layer formed on the single-crystal silicon substrate. A flat part F is formed in a valley portion of the pyramid-shaped irregularities P provided on a surface of the single-crystal silicon substrate. With this configuration, a steep angle of 70° to 85° of a concave portion formed by a substantially (111) surface can be widened to between 115° and 135°. Accordingly, a change of atomic step morphology attributable to a rounded shape can be eliminated, thereby enabling to reduce epitaxial growth and defects in the amorphous or microcrystal semiconductor layer.

公开(公告)号：US20150068594A1

公开(公告)日：2015-03-12

申请号：US14399018

申请日：2012-10-15

申请人： Aya Nishiyama ,  Hiroyuki Fuchigami ,  Hidetada Tokioka

发明人： Aya Nishiyama ,  Hiroyuki Fuchigami ,  Hidetada Tokioka

IPC分类号： H01L31/0236 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/02363 ,  H01L31/02168 ,  H01L31/03685 ,  H01L31/0747 ,  H01L31/186 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： To provide a solar cell that reduces occurrence of a defect and has high photoelectric conversion efficiency. The solar cell includes a silicon substrate such as an n-type single-crystal silicon substrate single crystal with pyramid-shaped irregularities P formed thereon, and an amorphous or microcrystal semiconductor layer formed on the single-crystal silicon substrate. A flat part F is formed in a valley portion of the pyramid-shaped irregularities P provided on a surface of the single-crystal silicon substrate. With this configuration, a steep angle of 70° to 85° of a concave portion formed by a substantially (111) surface can be widened to between 115° and 135°. Accordingly, a change of atomic step morphology attributable to a rounded shape can be eliminated, thereby enabling to reduce epitaxial growth and defects in the amorphous or microcrystal semiconductor layer.

摘要翻译： 提供减少缺陷发生并具有高光电转换效率的太阳能电池。 太阳能电池包括形成在其上的金字塔形凹凸P的n型单晶硅衬底单晶硅，以及形成在单晶硅衬底上的非晶或微晶半导体层的硅衬底。 在设置在单晶硅基板的表面上的棱锥状的凹凸P的谷部形成有平坦部F. 利用这种构造，由大致（111）表面形成的凹部的70°至85°的陡峭角度可以加宽到115°和135°之间。 因此，可以消除归因于圆形形状的原子台阶形态的变化，从而能够减少非晶或微晶半导体层中的外延生长和缺陷。