公开(公告)号：US20120048063A1

公开(公告)日：2012-03-01

申请号：US12443993

申请日：2007-01-30

申请人： Toshio Maetani ,  Satoshi Uenosono ,  Aya Uenosono ,  Masateru Ueta

发明人： Toshio Maetani ,  Satoshi Uenosono ,  Aya Uenosono ,  Masateru Ueta

IPC分类号： B32B15/02 ,  C22C38/02 ,  C22C38/04 ,  B32B5/16 ,  B22F9/08 ,  B05D7/00 ,  B22F3/02 ,  C22C38/00 ,  B22F1/00

CPC分类号： H01F41/0246 ,  B22F2998/00 ,  C22C33/0271 ,  C22C38/02 ,  C22C38/04 ,  H01F1/26 ,  Y10T428/2991 ,  B22F9/082

摘要： High compressibility iron powder that is suitably used for parts with excellent magnetic characteristics or high density sintered parts and that has good productivity is provided from pure iron powder which includes, as impurities in percent by mass, C: 0.005% or less, Si: more than 0.01% and 0.03% or less, Mn: 0.03% or more and 0.07% or less, P: 0.01% or less, S: 0.01% or less, O: 0.10% or less, and N: 0.001% or less, and whose particle includes four or less crystal grains on average and has a micro Vickers hardness (Hv) of 80 or less on average. The circularity of the iron powder is preferably 0.7 or more.

摘要翻译： 适用于具有优良磁特性或高密度烧结部件并具有良好生产率的部件的高压缩性铁粉由纯铁粉提供，所述纯铁粉以质量％计含有C：0.005％以下的Si：更多 0.01％以上且0.03％以下，Mn：0.03％以上且0.07％以下，P：0.01％以下，S：0.01％以下，O：0.10％以下，N：0.001％以下， 并且其颗粒平均包含四个或更少的晶粒，并且具有平均80以下的微维氏硬度（Hv）。 铁粉的圆形度优选为0.7以上。

公开(公告)号：US20090034203A1

公开(公告)日：2009-02-05

申请号：US12278003

申请日：2007-02-14

申请人： Hoshiaki Terao ,  Hiroki Ota ,  Hideaki Kobiki ,  Satoshi Uenosono ,  Aya Uenosono

发明人： Hoshiaki Terao ,  Hiroki Ota ,  Hideaki Kobiki ,  Satoshi Uenosono ,  Aya Uenosono

IPC分类号： H05K7/20 ,  C22C27/06 ,  C22F1/11 ,  B22F3/11 ,  B22F3/24 ,  C22C30/02

CPC分类号： H01L23/3736 ,  B21B3/00 ,  B22F2003/248 ,  B22F2998/10 ,  C22C1/0425 ,  C22C1/0433 ,  C22C9/00 ,  C22C27/06 ,  C22C30/02 ,  C22C47/14 ,  C22C49/10 ,  C22F1/08 ,  C22F1/11 ,  H01L21/4871 ,  H01L2924/0002 ,  B22F3/11 ,  B22F3/26 ,  B22F3/18 ,  B22F3/24 ,  H01L2924/00

摘要： In a Cr—Cu alloy that is formed by powder metallurgy and contains a Cu matrix and flattened Cr phases, the Cr content in the Cr—Cu alloy is more than 30% to 80% or less by mass, and the average aspect ratio of the flattened Cr phases is more than 1.0 and less than 100. The Cr—Cu alloy has a small thermal expansion coefficient in in-plane directions, a high thermal conductivity, and excellent processability. A method for producing the Cr—Cu alloy is also provided. A heat-release plate for semiconductors and a heat-release component for semiconductors, each utilizing the Cr—Cu alloy, are also provided.

摘要翻译： 在通过粉末冶金形成并含有Cu基体和平坦的Cr相的Cr-Cu合金中，Cr-Cu合金中的Cr含量大于30质量％〜80体积％以下，平均长径比 平坦的Cr相大于1.0且小于100.Cr-Cu合金在面内方向上的热膨胀系数小，导热性高，加工性优异。 还提供了一种生产Cr-Cu合金的方法。 还提供了各自使用Cr-Cu合金的半导体用放热板和半导体用散热构件。

公开(公告)号：US08557015B2

公开(公告)日：2013-10-15

申请号：US12278003

申请日：2007-02-14

申请人： Hoshiaki Terao ,  Hiroki Ota ,  Hideaki Kobiki ,  Aya Uenosono

发明人： Hoshiaki Terao ,  Hiroki Ota ,  Hideaki Kobiki ,  Satoshi Uenosono

IPC分类号： B22F9/00 ,  C22C9/00

CPC分类号： H01L23/3736 ,  B21B3/00 ,  B22F2003/248 ,  B22F2998/10 ,  C22C1/0425 ,  C22C1/0433 ,  C22C9/00 ,  C22C27/06 ,  C22C30/02 ,  C22C47/14 ,  C22C49/10 ,  C22F1/08 ,  C22F1/11 ,  H01L21/4871 ,  H01L2924/0002 ,  B22F3/11 ,  B22F3/26 ,  B22F3/18 ,  B22F3/24 ,  H01L2924/00

摘要： In a Cr—Cu alloy that is formed by powder metallurgy and contains a Cu matrix and flattened Cr phases, the Cr content in the Cr—Cu alloy is more than 30% to 80% or less by mass, and the average aspect ratio of the flattened Cr phases is more than 1.0 and less than 100. The Cr—Cu alloy has a small thermal expansion coefficient in in-plane directions, a high thermal conductivity, and excellent processibility. A method for producing the Cr—Cu alloy is also provided. A heat-release plate for semiconductors and a heat-release component for semiconductors, each utilizing the Cr—Cu alloy, are also provided.

摘要翻译： 在通过粉末冶金形成并含有Cu基体和平坦的Cr相的Cr-Cu合金中，Cr-Cu合金中的Cr含量大于30质量％〜80体积％以下，平均长径比 平坦的Cr相大于1.0且小于100.Cr-Cu合金在面内方向上的热膨胀系数小，导热性高，加工性优异。 还提供了一种生产Cr-Cu合金的方法。 还提供了各自使用Cr-Cu合金的半导体用放热板和半导体用散热构件。