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1.发明申请Cr-Cu ALLOY, METHOD FOR PRODUCING THE SAME, HEAT-RELEASE PLATE FOR SEMICONDUCTOR, AND HEAT-RELEASE COMPONENT FOR SEMICONDUCTOR 有权Cr-Cu合金，其制造方法，半导体用热释片和半导体热释放元件公开(公告)号：US20090034203A1
公开(公告)日：2009-02-05
申请号：US12278003
申请日：2007-02-14
申请人： Hoshiaki Terao , Hiroki Ota , Hideaki Kobiki , Satoshi Uenosono , Aya Uenosono
发明人： Hoshiaki Terao , Hiroki Ota , Hideaki Kobiki , Satoshi Uenosono , Aya Uenosono
CPC分类号： H01L23/3736 , B21B3/00 , B22F2003/248 , B22F2998/10 , C22C1/0425 , C22C1/0433 , C22C9/00 , C22C27/06 , C22C30/02 , C22C47/14 , C22C49/10 , C22F1/08 , C22F1/11 , H01L21/4871 , H01L2924/0002 , B22F3/11 , B22F3/26 , B22F3/18 , B22F3/24 , H01L2924/00
摘要： In a Cr—Cu alloy that is formed by powder metallurgy and contains a Cu matrix and flattened Cr phases, the Cr content in the Cr—Cu alloy is more than 30% to 80% or less by mass, and the average aspect ratio of the flattened Cr phases is more than 1.0 and less than 100. The Cr—Cu alloy has a small thermal expansion coefficient in in-plane directions, a high thermal conductivity, and excellent processability. A method for producing the Cr—Cu alloy is also provided. A heat-release plate for semiconductors and a heat-release component for semiconductors, each utilizing the Cr—Cu alloy, are also provided.
摘要翻译： 在通过粉末冶金形成并含有Cu基体和平坦的Cr相的Cr-Cu合金中，Cr-Cu合金中的Cr含量大于30质量％〜80体积％以下，平均长径比 平坦的Cr相大于1.0且小于100.Cr-Cu合金在面内方向上的热膨胀系数小，导热性高，加工性优异。 还提供了一种生产Cr-Cu合金的方法。 还提供了各自使用Cr-Cu合金的半导体用放热板和半导体用散热构件。
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2.发明授权Cr-Cu alloy, method for producing the same, heat-release plate for semiconductor, and heat-release component for semiconductor 有权Cr-Cu合金，其制造方法，半导体用散热板和半导体用散热构件公开(公告)号：US08557015B2
公开(公告)日：2013-10-15
申请号：US12278003
申请日：2007-02-14
申请人： Hoshiaki Terao , Hiroki Ota , Hideaki Kobiki , Aya Uenosono
发明人： Hoshiaki Terao , Hiroki Ota , Hideaki Kobiki , Satoshi Uenosono
CPC分类号： H01L23/3736 , B21B3/00 , B22F2003/248 , B22F2998/10 , C22C1/0425 , C22C1/0433 , C22C9/00 , C22C27/06 , C22C30/02 , C22C47/14 , C22C49/10 , C22F1/08 , C22F1/11 , H01L21/4871 , H01L2924/0002 , B22F3/11 , B22F3/26 , B22F3/18 , B22F3/24 , H01L2924/00
摘要： In a Cr—Cu alloy that is formed by powder metallurgy and contains a Cu matrix and flattened Cr phases, the Cr content in the Cr—Cu alloy is more than 30% to 80% or less by mass, and the average aspect ratio of the flattened Cr phases is more than 1.0 and less than 100. The Cr—Cu alloy has a small thermal expansion coefficient in in-plane directions, a high thermal conductivity, and excellent processibility. A method for producing the Cr—Cu alloy is also provided. A heat-release plate for semiconductors and a heat-release component for semiconductors, each utilizing the Cr—Cu alloy, are also provided.
摘要翻译： 在通过粉末冶金形成并含有Cu基体和平坦的Cr相的Cr-Cu合金中，Cr-Cu合金中的Cr含量大于30质量％〜80体积％以下，平均长径比 平坦的Cr相大于1.0且小于100.Cr-Cu合金在面内方向上的热膨胀系数小，导热性高，加工性优异。 还提供了一种生产Cr-Cu合金的方法。 还提供了各自使用Cr-Cu合金的半导体用放热板和半导体用散热构件。
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3.发明授权Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy 有权用于半导体器件和半导体模块的散热的合金以及合金的制造方法公开(公告)号：US07955448B2
公开(公告)日：2011-06-07
申请号：US11886973
申请日：2005-10-05
申请人： Hoshiaki Terao , Hideaki Kobiki , Satoshi Uenosono
发明人： Hoshiaki Terao , Hideaki Kobiki , Satoshi Uenosono
CPC分类号： C22C9/00 , B22F2003/248 , B22F2998/10 , C22C1/04 , C22C1/0425 , C22C27/06 , C22C30/02 , C22F1/08 , C22F1/11 , H01L23/3733 , H01L23/3736 , H01L2924/0002 , B22F1/0003 , B22F3/10 , B22F3/26 , B22F3/24 , H01L2924/00
摘要： It is an object to provide an inexpensive alloy for heat dissipation having a small thermal expansion coefficient as known composite materials, a large thermal conductivity as pure copper, and excellent machinability and a method for manufacturing the alloy. In particular, since various shapes are required of the alloy for heat dissipation, a manufacturing method by using a powder metallurgy method capable of supplying alloys for heat dissipation, the manufacturing costs of which are low and which take on various shapes, is provided besides the known melting method. The alloy according to the present invention is a Cu—Cr alloy, which is composed of 0.3 percent by mass or more, and 80 percent by mass or less of Cr and the remainder of Cu and incidental impurities and which has a structure in which particulate Cr phases having a major axis of 100 nm or less and an aspect ratio of less than 10 are precipitated at a density of 20 particles/μm2 in a Cu matrix except Cr phases of more than 100 nm.
摘要翻译： 本发明的目的是提供一种廉价的散热合金，其具有作为已知的复合材料的热膨胀系数小，作为纯铜的大的热导率，以及优异的机械加工性以及该合金的制造方法。 特别是，由于需要散热用合金的各种形状，因此除了制造成本低，采取各种形状以外，还提供了能够提供散热用合金的粉末冶金法的制造方法 已知的熔化方法。 根据本发明的合金是Cu-Cr合金，其由0.3质量％以上，80质量％以下的Cr和余量的Cu和附带的杂质构成，并且具有以下结构：颗粒 具有100nm以下的长轴和小于10的长宽比的Cr相在除了大于100nm的Cr相以外的Cu基体中以20个/μm2的密度析出。
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公开(公告)号：US20120186800A1
公开(公告)日：2012-07-26
申请号：US13499308
申请日：2010-10-01
申请人： Hoshiaki Terao , Hideaki Kobiki
发明人： Hoshiaki Terao , Hideaki Kobiki
CPC分类号： H01L23/3735 , B22F3/26 , B22F7/04 , B22F2007/045 , B32B15/01 , C22C1/0425 , C22C1/045 , C22C9/00 , C22C27/06 , C22C30/02 , C22F1/08 , C22F1/11 , C22F1/18 , H01L23/3736 , H01L23/473 , H01L2224/32225
摘要： A heat sink for an electronic device includes a Cr—Cu alloy layer including a Cu matrix and more than 30 mass % and not more than 80 mass % of Cr; and Cu layers provided on top and rear surfaces of the Cr—Cu alloy layer.
摘要翻译： 电子器件用散热器包括：含有Cu基体的Cr-Cu合金层，Cr：30质量％以上且80质量％以下， 并且Cu层设置在Cr-Cu合金层的顶表面和后表面上。
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公开(公告)号：US5368763A
公开(公告)日：1994-11-29
申请号：US140362
申请日：1993-10-20
CPC分类号： C04B35/2658
摘要： A low power loss Mn-Zn ferrite consists essentially of Fe.sub.2 O.sub.3, MnO and ZnO at a given mole ratio and contains given amounts of SiO.sub.2, CaO, niobium oxide and titanium oxide or antimony oxide as trace additives. This ferrite is suitable as a transformer material for switched mode power supply.
摘要翻译： 低功率损耗的Mn-Zn铁氧体主要由Fe2O3，MnO和ZnO以给定的摩尔比组成，并含有给定量的SiO 2，CaO，氧化铌和氧化钛或氧化锑作为痕量添加剂。 该铁氧体适用于开关电源的变压器材料。
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公开(公告)号：US5143638A
公开(公告)日：1992-09-01
申请号：US662425
申请日：1991-02-28
CPC分类号： C04B35/2658
摘要： A low power loss Mn-Zn ferrite consists essentially of Fe.sub.2 O.sub.3, MnO and ZnO at a given mole ratio and contains given amounts of SiO.sub.2, CaO, niobium oxide and titanium oxide or antimony oxide as trace additives. This ferrite is suitable as a transformer material for switched mode power supply.
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公开(公告)号：US08419202B2
公开(公告)日：2013-04-16
申请号：US13144091
申请日：2010-01-12
申请人： Takeshi Ogura , Kazuyuki Ono , Takafumi Hara , Masateru Ueta , Yuji Yamasaki , Hideaki Kobiki , Tomokazu Nagao , Yuichi Watanabe
发明人： Takeshi Ogura , Kazuyuki Ono , Takafumi Hara , Masateru Ueta , Yuji Yamasaki , Hideaki Kobiki , Tomokazu Nagao , Yuichi Watanabe
IPC分类号： G09F13/04
CPC分类号： G02F1/133608 , G02F1/133308 , G02F1/133604 , G02F2001/133314 , G02F2201/503 , G02F2201/54
摘要： The present invention relates to the rigidity of a backlight chassis and is applicable to a liquid crystal display device including a backlight chassis and a light source located in the backlight chassis. A liquid crystal display device according to the present invention includes a backlight chassis (24), located to face a rear surface of a liquid crystal panel (10), for supporting a light source (22) for illuminating the rear surface of the liquid crystal panel (10). The backlight chassis (24) is a substantively flat plate-like member with upright peripheral portions (24a through 24d), and includes grooves (71 through 74) in a first area (A1) and a second area (A2), which are separated from each other by a border line (L) set on the backlight chassis (24). According to the present invention, the entirety of the backlight chassis is unlikely to be deflected.
摘要翻译： 本发明涉及一种背光源底座的刚性，并且可应用于包括位于背光底盘中的背光源底座和光源的液晶显示装置。 根据本发明的液晶显示装置包括：背光源底座（24），其位于与液晶面板（10）的背面相对的位置，用于支撑用于照射液晶的背面的光源（22） 面板（10）。 背光底盘（24）是具有直立周边部分（24a至24d）的实质平板状构件，并且在第一区域（A1）和第二区域（A2）中包括分隔开的凹槽（71至74） 通过设置在背光底盘（24）上的边界线（L）彼此相对。 根据本发明，整个背光底盘不太可能被偏转。
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公开(公告)号：US20110286203A1
公开(公告)日：2011-11-24
申请号：US13144091
申请日：2010-01-12
申请人： Takeshi Ogura , Kazuyuki Ono , Takafumi Hara , Masateru Ueta , Yuji Yamasaki , Hideaki Kobiki , Tomokazu Nagao , Yuichi Watanabe
发明人： Takeshi Ogura , Kazuyuki Ono , Takafumi Hara , Masateru Ueta , Yuji Yamasaki , Hideaki Kobiki , Tomokazu Nagao , Yuichi Watanabe
IPC分类号： G02F1/13357
CPC分类号： G02F1/133608 , G02F1/133308 , G02F1/133604 , G02F2001/133314 , G02F2201/503 , G02F2201/54
摘要： The present invention relates to the rigidity of a backlight chassis and is applicable to a liquid crystal display device including a backlight chassis and a light source located in the backlight chassis. A liquid crystal display device according to the present invention includes a backlight chassis (24), located to face a rear surface of a liquid crystal panel (10), for supporting a light source (22) for illuminating the rear surface of the liquid crystal panel (10). The backlight chassis (24) is a substantively flat plate-like member with upright peripheral portions (24a through 24d), and includes grooves (71 through 74) in a first area (A1) and a second area (A2), which are separated from each other by a border line (L) set on the backlight chassis (24). According to the present invention, the entirety of the backlight chassis is unlikely to be deflected.
摘要翻译： 本发明涉及一种背光源底座的刚性，并且可应用于包括位于背光底盘中的背光源底座和光源的液晶显示装置。 根据本发明的液晶显示装置包括：背光源底座（24），其位于与液晶面板（10）的背面相对的位置，用于支撑用于照射液晶的背面的光源（22） 面板（10）。 背光底盘（24）是具有直立周边部分（24a至24d）的实质平板状构件，并且在第一区域（A1）和第二区域（A2）中包括分隔开的凹槽（71至74） 通过设置在背光底盘（24）上的边界线（L）彼此相对。 根据本发明，整个背光底盘不太可能被偏转。
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