-
1.发明申请DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES 有权双层双层透明导电氧化物，用于减少光伏器件中的肖特基屏障公开(公告)号：US20140127853A1
公开(公告)日：2014-05-08
申请号：US13668941
申请日：2012-11-05
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/18
CPC分类号： H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
摘要翻译： 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。
-
2.发明授权公开(公告)号：US10593815B2
公开(公告)日：2020-03-17
申请号：US15894690
申请日：2018-02-12
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/075 , H01L31/18
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
-
3.发明授权Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices 有权双层透明导电氧化物，用于降低光伏器件中的肖特基势垒公开(公告)号：US09379259B2
公开(公告)日：2016-06-28
申请号：US13668941
申请日：2012-11-05
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/075 , H01L31/0224 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
摘要翻译： 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。
-
4.发明授权公开(公告)号：US11444215B2
公开(公告)日：2022-09-13
申请号：US16741142
申请日：2020-01-13
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/075 , H01L31/18
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
-
5.发明授权公开(公告)号：US09917215B2
公开(公告)日：2018-03-13
申请号：US15189925
申请日：2016-06-22
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/075 , H01L31/0224 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
-
6.发明申请公开(公告)号：US20140124795A1
公开(公告)日：2014-05-08
申请号：US13677899
申请日：2012-11-15
发明人： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC分类号： H01L31/0236 , H01L31/028
CPC分类号： H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.024 秒)
