公开(公告)号：US10593815B2

公开(公告)日：2020-03-17

申请号：US15894690

申请日：2018-02-12

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Bay Zu Precision Co., LTD.

发明人： Shun-Ming Chen ,  Chien-Chih Huang ,  Joel P. Desouza ,  Augustin J. Hong ,  Jeehwan Kim ,  Chien-Yeh Ku ,  Devendra K. Sadana ,  Chuan-Wen Wang

IPC分类号： H01L31/0224 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

公开(公告)号：US11444215B2

公开(公告)日：2022-09-13

申请号：US16741142

申请日：2020-01-13

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Bay Zu Precision Co., LTD.

发明人： Shun-Ming Chen ,  Chien-Chih Huang ,  Joel P. Desouza ,  Augustin J. Hong ,  Jeehwan Kim ,  Chien-Yeh Ku ,  Devendra K. Sadana ,  Chuan-Wen Wang

IPC分类号： H01L31/0224 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

公开(公告)号：US09917215B2

公开(公告)日：2018-03-13

申请号：US15189925

申请日：2016-06-22

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Bay Zu Precision Co., LTD.

发明人： Shun-Ming Chen ,  Chien-Chih Huang ,  Joel P. Desouza ,  Augustin J. Hong ,  Jeehwan Kim ,  Chien-Yeh Ku ,  Devendra K. Sadana ,  Chuan-Wen Wang

IPC分类号： H01L31/075 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/18

CPC分类号： H01L31/022483 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

公开(公告)号：US20160071995A1

公开(公告)日：2016-03-10

申请号：US14941023

申请日：2015-11-13

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  BAY ZU PRECISION CO., LTD

发明人： Tze-Chiang Chen ,  Augustin J. Hong ,  Chien-Chih Huang ,  Yu-Wei Huang ,  Jeehwan Kim ,  Devendra K. Sadana ,  Chih-Fu Tseng

IPC分类号： H01L31/075 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L31/1804 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.

公开(公告)号：US20140124795A1

公开(公告)日：2014-05-08

申请号：US13677899

申请日：2012-11-15

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  BAY ZU PRECISION CO., LTD.

发明人： Shun-Ming Chen ,  Chien-Chih Huang ,  Joel P. Desouza ,  Augustin J. Hong ,  Jeehwan Kim ,  Chien-Yeh Ku ,  Devendra K. Sadana ,  Chuan-Wen Wang

IPC分类号： H01L31/0236 ,  H01L31/028

CPC分类号： H01L31/022483 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

公开(公告)号：US09537038B2

公开(公告)日：2017-01-03

申请号：US14941023

申请日：2015-11-13

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  BAY ZU PRECISION CO., LTD

发明人： Tze-Chiang Chen ,  Augustin J. Hong ,  Chien-Chih Huang ,  Yu-Wei Huang ,  Jeehwan Kim ,  Devendra K. Sadana ,  Chih-Fu Tseng

IPC分类号： H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0224

CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L31/1804 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.

摘要翻译： 一种用于形成光伏器件的方法包括在衬底上沉积p型层。 通过将p型层暴露于氧化剂，在p型层上形成阻挡层。 在势垒层上形成本征层，在本征层上形成n型层。

公开(公告)号：US09379259B2

公开(公告)日：2016-06-28

申请号：US13668941

申请日：2012-11-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Bay Zu Precision Co., LTD.

发明人： Shun-Ming Chen ,  Chien-Chih Huang ,  Joel P. Desouza ,  Augustin J. Hong ,  Jeehwan Kim ,  Chien-Yeh Ku ,  Devendra K. Sadana ,  Chuan-Wen Wang

IPC分类号： H01L31/075 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/18

CPC分类号： H01L31/022483 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

摘要翻译： 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。

公开(公告)号：US20140127853A1

公开(公告)日：2014-05-08

申请号：US13668941

申请日：2012-11-05

申请人： INTERNATIONAL BUSINESS MACHINES CORP ,  BAY ZU PRECISION CO., LTD.

发明人： Shun-Ming Chen ,  Chien-Chih Huang ,  Joel P. Desouza ,  Augustin J. Hong ,  Jeehwan Kim ,  Chien-Yeh Ku ,  Devendra K. Sadana ,  Chuan-Wen Wang

IPC分类号： H01L31/18

CPC分类号： H01L31/022483 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

摘要翻译： 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。

公开(公告)号：US12068477B2

公开(公告)日：2024-08-20

申请号：US16679369

申请日：2019-11-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Devendra K. Sadana ,  Stephen W. Bedell ,  Joel P. de Souza ,  John Collins

IPC分类号： H01M4/38 ,  H01M4/04 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/80

CPC分类号： H01M4/386 ,  H01M4/0402 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/80

摘要： A method of forming a solid-state lithium ion rechargeable battery may include depositing a metal layer onto a top surface of a substrate, depositing a handle layer onto a top surface of the metal layer, wherein a portion of the handle layer overlaps the metal layer and the substrate, spalling a portion of the substrate thereby forming a spalled substrate layer, porosifying the spalled substrate layer thereby forming a porous substrate layer, depositing an electrolyte layer onto a top surface of the porous substrate layer, wherein the electrolyte layer is in direct contact with the porous substrate layer, and depositing a cathode onto a top surface of the electrolyte layer. The method may include depositing a cathode contact layer onto a top surface of the cathode, wherein the cathode contact layer is in direct contact with the cathode. The porous substrate layer may be made of silicon.

公开(公告)号：US11864906B2

公开(公告)日：2024-01-09

申请号：US16447324

申请日：2019-06-20

申请人： International Business Machines Corporation

发明人： Steven J. Holmes ,  Devendra K. Sadana ,  Stephen W. Bedell

IPC分类号： A61B5/00

CPC分类号： A61B5/4064 ,  A61B5/0031 ,  A61B5/0084 ,  A61B5/742 ,  A61B2562/0233 ,  A61B2562/046

摘要： A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.