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公开(公告)号:US07859079B2
公开(公告)日:2010-12-28
申请号:US12427151
申请日:2009-04-21
申请人: Makoto Kondou , Kiyoshi Arai , Jose Saiz , Pierre Solomalala , Emmanuel Dutarde , Benoit Boursat , Philippe Lasserre
发明人: Makoto Kondou , Kiyoshi Arai , Jose Saiz , Pierre Solomalala , Emmanuel Dutarde , Benoit Boursat , Philippe Lasserre
CPC分类号: H01L25/18 , H01L2224/48137 , H01L2224/48139 , H01L2224/49171 , H01L2224/49175 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/00
摘要: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.
摘要翻译: 本发明涉及一种功率半导体器件,包括开关功率半导体元件和与开关功率半导体元件反并联的续流二极管。 功率半导体的特征在于,开关功率半导体元件的反向电极和续流二极管的反向电极接合并安装在形成在第一基板的主表面上的电路图案上,并且电路图案 形成在第二基板的主表面上,以与开关功率半导体元件的表面电极和续流二极管的表面电极相对的方式连接到开关功率半导体元件和续流二极管的表面电极 分别通过连接导体焊接。
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公开(公告)号:US20090250781A1
公开(公告)日:2009-10-08
申请号:US12427151
申请日:2009-04-21
申请人: Makoto Kondou , Kiyoshi Arai , Jose Saiz , Pierre Solomalala , Emmanuel Dutarde , Benoit Boursat , Philippe Lasserre
发明人: Makoto Kondou , Kiyoshi Arai , Jose Saiz , Pierre Solomalala , Emmanuel Dutarde , Benoit Boursat , Philippe Lasserre
IPC分类号: H01L27/06
CPC分类号: H01L25/18 , H01L2224/48137 , H01L2224/48139 , H01L2224/49171 , H01L2224/49175 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/00
摘要: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.
摘要翻译: 本发明涉及一种功率半导体器件,包括开关功率半导体元件和与开关功率半导体元件反并联的续流二极管。 功率半导体的特征在于,开关功率半导体元件的反向电极和续流二极管的反向电极接合并安装在形成在第一基板的主表面上的电路图案上,并且电路图案 形成在第二基板的主表面上,以与开关功率半导体元件的表面电极和续流二极管的表面电极相对的方式连接到开关功率半导体元件和续流二极管的表面电极 分别通过连接导体焊接。
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公开(公告)号:US07535076B2
公开(公告)日:2009-05-19
申请号:US11029379
申请日:2005-01-06
申请人: Makoto Kondou , Kiyoshi Arai , Jose Saiz , Pierre Solomalala , Emmanuel Dutarde , Benoit Boursat , Philippe Lasserre
发明人: Makoto Kondou , Kiyoshi Arai , Jose Saiz , Pierre Solomalala , Emmanuel Dutarde , Benoit Boursat , Philippe Lasserre
CPC分类号: H01L25/18 , H01L2224/48137 , H01L2224/48139 , H01L2224/49171 , H01L2224/49175 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/00
摘要: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.
摘要翻译: 本发明涉及一种功率半导体器件,包括开关功率半导体元件和与开关功率半导体元件反并联的续流二极管。 功率半导体的特征在于,开关功率半导体元件的反向电极和续流二极管的反向电极接合并安装在形成在第一基板的主表面上的电路图案上,并且电路图案 形成在第二基板的主表面上,以与开关功率半导体元件的表面电极和续流二极管的表面电极相对的方式连接到开关功率半导体元件和续流二极管的表面电极 分别通过连接导体焊接。
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4.
公开(公告)号:US07479693B2
公开(公告)日:2009-01-20
申请号:US11220788
申请日:2005-09-08
申请人: Makoto Kondou , Kiyoshi Arai , Jose Saiz , Pierre Solomalala , Emmanuel Dutarde , Benoit Boursat , Philippe Lasserre
发明人: Makoto Kondou , Kiyoshi Arai , Jose Saiz , Pierre Solomalala , Emmanuel Dutarde , Benoit Boursat , Philippe Lasserre
IPC分类号: H01L23/48
CPC分类号: H01L25/18 , H01L25/162 , H01L2224/16 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/3011 , H01L2924/00
摘要: One of the aspects of the present invention is to provide a power semiconductor device, including a first substrate having a first circuit pattern formed thereon, and a second substrate having a second circuit pattern formed thereon. The first substrate has a first center line extending along a predetermined transverse direction. At least one power semiconductor chip is mounted on the first circuit pattern of the first substrate, and has at least one chip electrode opposing to the second circuit pattern of the second substrate. Also, a plurality of first conductive connectors on the first circuit pattern is provided for electrical connection with the second circuit pattern of the second substrate. The first conductive connectors are arranged symmetrically in relative to the first center line of the first substrate.
摘要翻译: 本发明的一个方面是提供一种功率半导体器件,包括其上形成有第一电路图案的第一衬底和形成在其上的第二电路图案的第二衬底。 第一基板具有沿预定横向方向延伸的第一中心线。 至少一个功率半导体芯片安装在第一基板的第一电路图案上,并且具有与第二基板的第二电路图案相对的至少一个芯片电极。 此外,第一电路图案上的多个第一导电连接器被提供用于与第二基板的第二电路图形电连接。 第一导电连接器相对于第一基板的第一中心线对称布置。
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公开(公告)号:US07042725B2
公开(公告)日:2006-05-09
申请号:US10821031
申请日:2004-04-08
申请人: Nathalie Martin , Benoit Boursat , Emmanuel Dutarde , Jose Saiz , Jacques Cettour-Rose , Pierre Solomalala
发明人: Nathalie Martin , Benoit Boursat , Emmanuel Dutarde , Jose Saiz , Jacques Cettour-Rose , Pierre Solomalala
IPC分类号: H05K7/20
CPC分类号: H05K7/20927 , H01L23/473 , H01L2924/0002 , H02M7/003 , H01L2924/00
摘要: A power switching module is provided having at least one power switch placed above at least one other power switch, each power switch in turn including an upper wall and a lower wall, each of which is cooled through thermal conduction by a cooling medium that circulates in channels and voids that are provided along the walls for this purpose.
摘要翻译: 电源开关模块设置有至少一个电源开关,放置在至少一个其他电力开关上方,每个电源开关又包括一个上壁和一个下壁,每个电源开关通过热循环冷却介质进行热传导而被冷却 为了这个目的,沿着墙壁提供的通道和空隙。
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