公开(公告)号：US20100109013A1

公开(公告)日：2010-05-06

申请号：US12588973

申请日：2009-11-04

Applicant: Ji-Su Ahn ,  Sung-Chul Kim ,  Beong-Ju Kim

Inventor： Ji-Su Ahn ,  Sung-Chul Kim ,  Beong-Ju Kim

IPC: H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC classification number: H01L27/1285

Abstract: A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.

Abstract translation: 一种用于有机发光二极管的薄膜晶体管包括：包括像素部分和互连部分的衬底，衬底上的缓冲层，缓冲层上的栅电极和栅极互连，其中栅电极位于像素 并且栅极互连位于互连部分，衬底上的栅极绝缘层，栅电极上的半导体层，电连接到半导体层的源极和漏极以及栅极互连上的金属图案。

公开(公告)号：US20110139767A1

公开(公告)日：2011-06-16

申请号：US12898195

申请日：2010-10-05

Applicant: Beong-Ju KIM ,  Ji-Su AHN ,  Cheol-Ho YU

Inventor： Beong-Ju KIM ,  Ji-Su AHN ,  Cheol-Ho YU

IPC: H05B3/06 ,  H05B3/22

CPC classification number: H01L21/02532 ,  H01L21/02667 ,  H01L21/67259 ,  H01L21/68 ,  H01L21/6838

Abstract: Provided is an amorphous silicon (a-Si) crystallization apparatus for crystallizing a-Si into polysilicon (poly-Si), and more particularly, to an a-Si crystallization apparatus for crystallizing a-Si into poly-Si by applying a certain power voltage to a conductive thin film disposed on a substrate including an a-Si layer to generate joule heat, wherein the a-Si formed on the substrate can be crystallized using the same equipment regardless of the size of the substrate. The a-Si crystallization apparatus includes a process chamber, a substrate holder disposed at a lower part of the process chamber, a power voltage application part disposed at an upper part of the process chamber and including a first electrode and a second electrode having a polarity different from the first electrode, and a controller for adjusting a distance between the first and second electrode.

Abstract translation: 提供了一种用于将a-Si结晶成多晶硅（poly-Si）的非晶硅（a-Si）结晶装置，更具体地说，涉及通过施加一定的功率将a-Si结晶成多晶硅的a-Si结晶装置 电压设置在包括a-Si层的基板上的导电薄膜以产生焦耳热，其中形成在基板上的a-Si可以使用相同的设备结晶，而与基板的尺寸无关。 a-Si结晶装置包括处理室，设置在处理室的下部的基板保持件，设置在处理室的上部的电源施加部，包括第一电极和具有极性的第二电极 与第一电极不同，以及用于调节第一和第二电极之间的距离的控制器。

公开(公告)号：US08927912B2

公开(公告)日：2015-01-06

申请号：US13313499

申请日：2011-12-07

Applicant: Beong-Ju Kim ,  Sung-Chul Kim

Inventor： Beong-Ju Kim ,  Sung-Chul Kim

IPC: H05B3/02 ,  H05B3/84 ,  C09K19/02

CPC classification number: H05B3/84

Abstract: A sealant curing apparatus is disclosed. In one embodiment, the apparatus includes a processing object panel, a panel supporting unit supporting the processing object panel and a voltage applying unit including a first electrode and a second electrode positioned on the panel supporting unit via the processing object panel interposed therebetween and having different polarities. The processing object panel includes: i) a conductive layer pattern including a heating unit that includes a lattice (grid) pattern, a connecting unit coupled to the first electrode and the second electrode, and a coupling unit connecting the heating unit and the connecting unit and ii) a sealant formed according to the heating unit.

Abstract translation: 公开了一种密封剂固化装置。 在一个实施例中，该装置包括处理对象面板，支撑处理对象面板的面板支撑单元和电压施加单元，该电压施加单元包括位于面板支撑单元上的第一电极和第二电极， 极性 处理对象面板包括：i）包括包括格子（格栅）图案的加热单元，耦合到第一电极和第二电极的连接单元的导电层图案，以及连接加热单元和连接单元的耦合单元 和ii）根据加热单元形成的密封剂。

公开(公告)号：US08519405B2

公开(公告)日：2013-08-27

申请号：US13102234

申请日：2011-05-06

Applicant: Ji-Su Ahn ,  Kwang-Nam Kim ,  Jae-Yong Lee ,  Beong-Ju Kim ,  In-Young Jung

Inventor： Ji-Su Ahn ,  Kwang-Nam Kim ,  Jae-Yong Lee ,  Beong-Ju Kim ,  In-Young Jung

IPC: H01L27/14

CPC classification number: H01L29/66765 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/78678

Abstract: The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof. The organic light emitting diode (OLED) display comprises the elements of the thin film transistor described above, and also includes an insulating film disposed on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode disposed on the insulating film, the first electrode being electrically connected to any one of the source and drain electrodes, and the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer.

Abstract translation: 本发明一般涉及薄膜晶体管，包括该薄膜晶体管的有机发光二极管（OLED）显示器及其制造方法。 薄膜晶体管包括：基板; 设置在所述基板上的栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体层; 设置在所述基板的整个表面上的层间电介质; 以及源极和漏极，其设置在层间电介质上并连接到半导体层，并且其中栅电极设置成对应于半导体层的整个表面及其制造方法。 有机发光二极管（OLED）显示器包括上述薄膜晶体管的元件，并且还包括设置在基板的整个表面上的绝缘膜，以及设置在基板上的第一电极，有机层和第二电极 绝缘膜，第一电极电连接到源极和漏极中的任何一个，并且栅电极被设置为对应于半导体层的整个表面。

公开(公告)号：US08404529B2

公开(公告)日：2013-03-26

申请号：US13431630

申请日：2012-03-27

Applicant: Ji-Su Ahn ,  Sung-Chul Kim ,  Beong-Ju Kim

Inventor： Ji-Su Ahn ,  Sung-Chul Kim ,  Beong-Ju Kim

IPC: H01L21/84

CPC classification number: H01L27/1285

Abstract: A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.

Abstract translation: 一种用于有机发光二极管的薄膜晶体管包括：包括像素部分和互连部分的衬底，衬底上的缓冲层，缓冲层上的栅电极和栅极互连，其中栅电极位于像素 并且栅极互连位于互连部分，衬底上的栅极绝缘层，栅电极上的半导体层，电连接到半导体层的源极和漏极以及栅极互连上的金属图案。

公开(公告)号：US20120312802A1

公开(公告)日：2012-12-13

申请号：US13313499

申请日：2011-12-07

Applicant: Beong-Ju Kim ,  Sung-Chul Kim

Inventor： Beong-Ju Kim ,  Sung-Chul Kim

IPC: H05B1/00 ,  H05B3/02

CPC classification number: H05B3/84

Abstract: A sealant curing apparatus is disclosed. In one embodiment, the apparatus includes a processing object panel, a panel supporting unit supporting the processing object panel and a voltage applying unit including a first electrode and a second electrode positioned on the panel supporting unit via the processing object panel interposed therebetween and having different polarities. The processing object panel includes: i) a conductive layer pattern including a heating unit that includes a lattice (grid) pattern, a connecting unit coupled to the first electrode and the second electrode, and a coupling unit connecting the heating unit and the connecting unit and ii) a sealant formed according to the heating unit.

Abstract translation: 公开了一种密封剂固化装置。 在一个实施例中，该装置包括处理对象面板，支撑处理对象面板的面板支撑单元和电压施加单元，该电压施加单元包括位于面板支撑单元上的第一电极和第二电极， 极性 处理对象面板包括：i）包括包括格子（格栅）图案的加热单元，耦合到第一电极和第二电极的连接单元的导电层图案，以及连接加热单元和连接单元的耦合单元 和ii）根据加热单元形成的密封剂。

公开(公告)号：US20120184074A1

公开(公告)日：2012-07-19

申请号：US13431630

申请日：2012-03-27

Applicant: Ji-Su AHN ,  Sung-Chul KIM ,  Beong-Ju KIM

Inventor： Ji-Su AHN ,  Sung-Chul KIM ,  Beong-Ju KIM

IPC: H01L21/336

CPC classification number: H01L27/1285

Abstract: A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection.

Abstract translation: 一种用于有机发光二极管的薄膜晶体管包括：包括像素部分和互连部分的衬底，衬底上的缓冲层，缓冲层上的栅电极和栅极互连，其中栅电极位于像素 并且栅极互连位于互连部分，衬底上的栅极绝缘层，栅电极上的半导体层，电连接到半导体层的源极和漏极以及栅极互连上的金属图案。

公开(公告)号：US20120097966A1

公开(公告)日：2012-04-26

申请号：US13102234

申请日：2011-05-06

Applicant: Ji-Su Ahn ,  Kwang-Nam Kim ,  Jae-Yong Lee ,  Beong-Ju Kim ,  In-Young Jung

Inventor： Ji-Su Ahn ,  Kwang-Nam Kim ,  Jae-Yong Lee ,  Beong-Ju Kim ,  In-Young Jung

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66765 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/78678

Abstract: The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof. The organic light emitting diode (OLED) display comprises the elements of the thin film transistor described above, and also includes an insulating film disposed on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode disposed on the insulating film, the first electrode being electrically connected to any one of the source and drain electrodes, and the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer.

Abstract translation: 本发明一般涉及薄膜晶体管，包括该薄膜晶体管的有机发光二极管（OLED）显示器及其制造方法。 薄膜晶体管包括：基板; 设置在所述基板上的栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体层; 设置在所述基板的整个表面上的层间电介质; 以及源极和漏极，其设置在层间电介质上并连接到半导体层，并且其中栅电极设置成对应于半导体层的整个表面及其制造方法。 有机发光二极管（OLED）显示器包括上述薄膜晶体管的元件，并且还包括设置在基板的整个表面上的绝缘膜，以及设置在基板上的第一电极，有机层和第二电极 绝缘膜，第一电极电连接到源极和漏极中的任何一个，并且栅电极被设置为对应于半导体层的整个表面。

公开(公告)号：US20110139611A1

公开(公告)日：2011-06-16

申请号：US12963193

申请日：2010-12-08

Applicant: Beong-Ju Kim ,  Ji-Su Ahn ,  Cheol-Ho Yu ,  Sung-Chul Kim

Inventor： Beong-Ju Kim ,  Ji-Su Ahn ,  Cheol-Ho Yu ,  Sung-Chul Kim

IPC: C23C16/24 ,  C23C14/34 ,  C23C14/14

CPC classification number: H01L21/67184 ,  H01L21/67196 ,  H01L21/67201

Abstract: In an apparatus for fabricating a thin film transistor, amorphous silicon is deposited on a substrate in a first multi-chamber and is crystallized into polycrystalline silicon without using a separate process chamber or multi-chamber, and the substrate deposited with the amorphous silicon is loaded into a second multi-chamber for forming electrodes, thereby making it possible to minimize a characteristic deviation and improve fabrication process efficiency. The apparatus includes a first multi-chamber in which amorphous silicon is deposited on a substrate, a second multi-chamber in which electrodes are formed on the substrate, and a loading/unloading chamber interposed between the first multi-chamber and the second multi-chamber. The loading/unloading chamber includes a substrate holder on a lower side thereof and a power voltage supplier on an upper side thereof.

Abstract translation: 在用于制造薄膜晶体管的装置中，非晶硅沉积在第一多腔中的衬底上，并且在不使用单独的处理室或多腔的情况下被结晶成多晶硅，并且将沉积有非晶硅的衬底加载 进入用于形成电极的第二多室中，从而使得可以使特性偏差最小化并提高制造工艺效率。 该装置包括：第一多腔室，其中非晶硅沉积在基底上;第二多腔室，其中在基底上形成电极;以及装载/卸载室，介于第一多腔室和第二多腔室之间， 房间。 装载/卸载室包括在其下侧的基板保持件和在其上侧的电源电压供应器。