MTCMOS flip-flop, circuit including the MTCMOS flip-flop, and method of forming the MTCMOS flip-flop
    1.
    发明授权
    MTCMOS flip-flop, circuit including the MTCMOS flip-flop, and method of forming the MTCMOS flip-flop 有权
    MTCMOS触发器,包括MTCMOS触发器的电路以及形成MTCMOS触发器的方法

    公开(公告)号:US07453300B2

    公开(公告)日:2008-11-18

    申请号:US11097235

    申请日:2005-04-04

    IPC分类号: H03K3/00

    CPC分类号: H03K19/0016 H03K19/0963

    摘要: A multi-threshold voltage complementary metal oxide semiconductor (MTCMOS) flip-flop, a circuit including the MTCMOS flip-flop, and a method of forming the MTCMOS flip-flop are disclosed. The MTCMOS flip-flop breaks a leakage current path during a sleep mode to retain an output data signal. The MTCMOS flip-flop typically further uses a data feedback unit to retain the output data signal.

    摘要翻译: 公开了一种多阈值电压互补金属氧化物半导体(MTCMOS)触发器,包括MTCMOS触发器的电路以及形成MTCMOS触发器的方法。 MTCMOS触发器在休眠模式期间断开漏电流路径以保持输出数据信号。 MTCMOS触发器通常还使用数据反馈单元来保持输出数据信号。

    Body biasing control circuit using lookup table and body biasing control method using same
    3.
    发明授权
    Body biasing control circuit using lookup table and body biasing control method using same 有权
    使用查找表和身体偏置控制方法使用本体偏置控制电路

    公开(公告)号:US07616048B2

    公开(公告)日:2009-11-10

    申请号:US11849486

    申请日:2007-09-04

    IPC分类号: H03K3/01

    摘要: A body biasing control circuit capable of being shared by a plurality of macro blocks and can independently control body voltages of a plurality of macro blocks. The body biasing control circuit includes a lookup table for storing a plurality of indexes where each index is associated with a body voltage appropriate for an operating state of a corresponding macro block. A control unit receives a corresponding index from the lookup table and generates a plurality of body voltages appropriate for an operating state of a macro block corresponding to the index and supplies the body voltages to the macro block.

    摘要翻译: 一种能够被多个宏块共享的主体偏置控制电路,并且可以独立地控制多个宏块的体电压。 身体偏置控制电路包括用于存储多个索引的查找表,其中每个索引与适于相应的宏块的操作状态的体电压相关联。 控制单元从查找表接收相应的索引,并产生适合于与索引相对应的宏块的操作状态的多个体电压,并将体电压提供给宏块。

    Control circuits and methods including delay times for multi-threshold CMOS devices
    5.
    发明申请
    Control circuits and methods including delay times for multi-threshold CMOS devices 有权
    控制电路和方法包括多阈值CMOS器件的延迟时间

    公开(公告)号:US20050168242A1

    公开(公告)日:2005-08-04

    申请号:US10996084

    申请日:2004-11-23

    申请人: Hyo-sig Won

    发明人: Hyo-sig Won

    CPC分类号: H03K19/0963 H03K19/0016

    摘要: Multi-Threshold CMOS (MTCMOS) devices include a high threshold voltage current control switch that is responsive to a first control signal, a low threshold voltage logic circuit and a flip-flop that is configured to store data from the low threshold voltage logic circuit and that is responsive to a second control signal. A control circuit also is provided that is configured to change a logic state of the second control signal and then, after a first delay, to change a logic state of the first control signal, in response to the MTCMOS device entering a sleep mode. The control circuit is further configured to change the logic state of the first control signal and then, after a second delay that is different from the first delay, to change the logic state of the second control signal in response to the MTCMOS device entering an active mode. Related methods also are provided.

    摘要翻译: 多阈值CMOS(MTCMOS)器件包括响应于第一控制信号的高阈值电压电流控制开关,低阈值电压逻辑电路和触发器,其被配置为存储来自低阈值电压逻辑电路的数据, 其响应于第二控制信号。 还提供了一种控制电路,其被配置为响应于MTCMOS设备进入休眠模式而改变第二控制信号的逻辑状态,然后在第一延迟之后改变第一控制信号的逻辑状态。 控制电路还被配置为改变第一控制信号的逻辑状态,然后在与第一延迟不同的第二延迟之后,响应于MTCMOS设备进入活动状态来改变第二控制信号的逻辑状态 模式。 还提供了相关方法。

    Multi-threshold CMOS system having short-circuit current prevention circuit
    6.
    发明申请
    Multi-threshold CMOS system having short-circuit current prevention circuit 审中-公开
    具有短路电流防止电路的多阈值CMOS系统

    公开(公告)号:US20060076987A1

    公开(公告)日:2006-04-13

    申请号:US11240419

    申请日:2005-10-03

    申请人: Hyo-sig Won

    发明人: Hyo-sig Won

    IPC分类号: H03B1/00

    CPC分类号: H03K19/0016 H03K19/00315

    摘要: Disclosed is a multi-threshold complementary metal-oxide semiconductor (MTCMOS) circuit system. The MTCMOS circuit system includes a single control transistor that it uses to switch a MTCMOS circuit between a sleep mode and an active mode. The MTCMOS circuit also includes a short-circuit current prevention circuit controlled by a MTCMOS control circuit. The short-circuit current prevention circuit receives an output signal from the MTCMOS circuit and selectively transmits the output signal to a latch circuit depending on the logic state of a control signal from the MTCMOS control circuit.

    摘要翻译: 公开了一种多阈值互补金属氧化物半导体(MTCMOS)电路系统。 MTCMOS电路系统包括单个控制晶体管,其用于在睡眠模式和活动模式之间切换MTCMOS电路。 MTCMOS电路还包括由MTCMOS控制电路控制的短路电流防止电路。 短路电流防止电路接收来自MTCMOS电路的输出信号,并且根据来自MTCMOS控制电路的控制信号的逻辑状态选择性地将输出信号发送到锁存电路。

    Control circuits and methods including delay times for multi-threshold CMOS devices
    7.
    发明授权
    Control circuits and methods including delay times for multi-threshold CMOS devices 有权
    控制电路和方法包括多阈值CMOS器件的延迟时间

    公开(公告)号:US07215155B2

    公开(公告)日:2007-05-08

    申请号:US10996084

    申请日:2004-11-23

    申请人: Hyo-sig Won

    发明人: Hyo-sig Won

    IPC分类号: H03K19/096 H03K3/037

    CPC分类号: H03K19/0963 H03K19/0016

    摘要: Multi-Threshold CMOS (MTCMOS) devices include a high threshold voltage current control switch that is responsive to a first control signal, a low threshold voltage logic circuit and a flip-flop that is configured to store data from the low threshold voltage logic circuit and that is responsive to a second control signal. A control circuit also is provided that is configured to change a logic state of the second control signal and then, after a first delay, to change a logic state of the first control signal, in response to the MTCMOS device entering a sleep mode. The control circuit is further configured to change the logic state of the first control signal and then, after a second delay that is different from the first delay, to change the logic state of the second control signal in response to the MTCMOS device entering an active mode. Related methods also are provided.

    摘要翻译: 多阈值CMOS(MTCMOS)器件包括响应于第一控制信号的高阈值电压电流控制开关,低阈值电压逻辑电路和触发器,其被配置为存储来自低阈值电压逻辑电路的数据, 其响应于第二控制信号。 还提供了一种控制电路,其被配置为响应于MTCMOS设备进入休眠模式而改变第二控制信号的逻辑状态,然后在第一延迟之后改变第一控制信号的逻辑状态。 控制电路还被配置为改变第一控制信号的逻辑状态,然后在与第一延迟不同的第二延迟之后,响应于MTCMOS设备进入活动状态来改变第二控制信号的逻辑状态 模式。 还提供了相关方法。

    Clocked-scan flip-flop for multi-threshold voltage CMOS circuit
    8.
    发明授权
    Clocked-scan flip-flop for multi-threshold voltage CMOS circuit 失效
    用于多阈值电压CMOS电路的时钟扫描触发器

    公开(公告)号:US06861887B2

    公开(公告)日:2005-03-01

    申请号:US10330427

    申请日:2002-12-30

    CPC分类号: G01R31/318541 H03K3/012

    摘要: A clocked-scan flip-flop for multi-threshold CMOS (MTCMOS) is provided. The clocked-scan flip-flop includes a first switching unit which switches normal data that are input from the outside and outputs the data; a second switching unit which switches scan data that are input from the outside and outputs the data; a latch unit which latches the data input from the first switching unit or the second switching unit; and a clock input unit which controls the switching operations of the first and second switching units according to the result of a predetermined operation on a clock signal and a scan clock signal that are input from the outside. The clocked-scan flip-flop has the characteristics of a complementary pass-transistor (CP) flip-flop, that is, low power consumption and high performance. Also, the clocked-scan flip-flop provides a full-scale scan function for test purposes.

    摘要翻译: 提供了多阈值CMOS(MTCMOS)的时钟扫描触发器。 时钟扫描触发器包括:第一切换单元,其切换从外部输入的正常数据并输出数据; 第二切换单元,切换从外部输入的扫描数据,并输出该数据; 锁存单元,其锁存从第一切换单元或第二切换单元输入的数据; 以及时钟输入单元,其根据对从外部输入的时钟信号和扫描时钟信号的预定操作的结果来控制第一和第二开关单元的切换操作。 时钟扫描触发器具有互补的通过晶体管(CP)触发器的特性,即低功耗和高性能。 此外,时钟扫描触发器为测试目的提供全尺寸扫描功能。