摘要:
A multi-threshold voltage complementary metal oxide semiconductor (MTCMOS) flip-flop, a circuit including the MTCMOS flip-flop, and a method of forming the MTCMOS flip-flop are disclosed. The MTCMOS flip-flop breaks a leakage current path during a sleep mode to retain an output data signal. The MTCMOS flip-flop typically further uses a data feedback unit to retain the output data signal.
摘要:
A multi-threshold voltage complementary metal oxide semiconductor (MTCMOS) flip-flop, a circuit including the MTCMOS flip-flop, and a method of forming the MTCMOS flip-flop are disclosed. The MTCMOS flip-flop breaks a leakage current path during a sleep mode to retain an output data signal. The MTCMOS flip-flop typically further uses a data feedback unit to retain the output data signal.
摘要:
A body biasing control circuit capable of being shared by a plurality of macro blocks and can independently control body voltages of a plurality of macro blocks. The body biasing control circuit includes a lookup table for storing a plurality of indexes where each index is associated with a body voltage appropriate for an operating state of a corresponding macro block. A control unit receives a corresponding index from the lookup table and generates a plurality of body voltages appropriate for an operating state of a macro block corresponding to the index and supplies the body voltages to the macro block.
摘要:
An integrated circuit (IC) may include at least one cell including a plurality of conductive lines that extend in a first direction and are in parallel to each other in a second direction that is perpendicular to the first direction, first contacts respectively disposed at two sides of at least one conductive line from among the plurality of conductive lines, and a second contact disposed on the at least one conductive line and the first contacts and forming a single node by being electrically connected to the at least one conductive line and the first contacts.
摘要:
Multi-Threshold CMOS (MTCMOS) devices include a high threshold voltage current control switch that is responsive to a first control signal, a low threshold voltage logic circuit and a flip-flop that is configured to store data from the low threshold voltage logic circuit and that is responsive to a second control signal. A control circuit also is provided that is configured to change a logic state of the second control signal and then, after a first delay, to change a logic state of the first control signal, in response to the MTCMOS device entering a sleep mode. The control circuit is further configured to change the logic state of the first control signal and then, after a second delay that is different from the first delay, to change the logic state of the second control signal in response to the MTCMOS device entering an active mode. Related methods also are provided.
摘要:
Disclosed is a multi-threshold complementary metal-oxide semiconductor (MTCMOS) circuit system. The MTCMOS circuit system includes a single control transistor that it uses to switch a MTCMOS circuit between a sleep mode and an active mode. The MTCMOS circuit also includes a short-circuit current prevention circuit controlled by a MTCMOS control circuit. The short-circuit current prevention circuit receives an output signal from the MTCMOS circuit and selectively transmits the output signal to a latch circuit depending on the logic state of a control signal from the MTCMOS control circuit.
摘要:
Multi-Threshold CMOS (MTCMOS) devices include a high threshold voltage current control switch that is responsive to a first control signal, a low threshold voltage logic circuit and a flip-flop that is configured to store data from the low threshold voltage logic circuit and that is responsive to a second control signal. A control circuit also is provided that is configured to change a logic state of the second control signal and then, after a first delay, to change a logic state of the first control signal, in response to the MTCMOS device entering a sleep mode. The control circuit is further configured to change the logic state of the first control signal and then, after a second delay that is different from the first delay, to change the logic state of the second control signal in response to the MTCMOS device entering an active mode. Related methods also are provided.
摘要:
A clocked-scan flip-flop for multi-threshold CMOS (MTCMOS) is provided. The clocked-scan flip-flop includes a first switching unit which switches normal data that are input from the outside and outputs the data; a second switching unit which switches scan data that are input from the outside and outputs the data; a latch unit which latches the data input from the first switching unit or the second switching unit; and a clock input unit which controls the switching operations of the first and second switching units according to the result of a predetermined operation on a clock signal and a scan clock signal that are input from the outside. The clocked-scan flip-flop has the characteristics of a complementary pass-transistor (CP) flip-flop, that is, low power consumption and high performance. Also, the clocked-scan flip-flop provides a full-scale scan function for test purposes.