公开(公告)号：US09449851B2

公开(公告)日：2016-09-20

申请号：US14833407

申请日：2015-08-24

申请人： Dillon Wong ,  Jairo Velasco, Jr. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

发明人： Dillon Wong ,  Jairo Velasco, Jr. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

IPC分类号： H01L21/20 ,  H01L21/326 ,  H01L21/479 ,  H01L21/225 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L21/326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/2254 ,  H01L21/2256 ,  H01L21/479 ,  H01L22/14 ,  H01L29/1606

摘要： This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

摘要翻译： 本公开提供了与局部掺杂二维（2D）材料有关的系统，方法和装置。 在一个方面中，形成包括衬底，设置在衬底上的第一绝缘体，设置在第一绝缘体上的第二绝缘体和设置在第二绝缘体上的2D材料的组件。 在2D材料和衬底之间施加第一电压。 通过施加在2D材料和衬底之间的第一电压，在2D材料和位于2D材料附近的探针之间施加第二电压。 去除2D材料和探头之间的第二电压。 去除2D材料和衬底之间的第一电压。 当施加第二电压时，靠近探针的2D材料的一部分与2D材料的其余部分具有不同的电子密度。

公开(公告)号：US20160064249A1

公开(公告)日：2016-03-03

申请号：US14833407

申请日：2015-08-24

申请人： Dillon Wong ,  Jairo Velasco, JR. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

发明人： Dillon Wong ,  Jairo Velasco, JR. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

IPC分类号： H01L21/326 ,  H01L21/479 ,  H01L21/02

CPC分类号： H01L21/326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/2254 ,  H01L21/2256 ,  H01L21/479 ,  H01L22/14 ,  H01L29/1606

摘要： This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

摘要翻译： 本公开提供了与局部掺杂二维（2D）材料有关的系统，方法和装置。 在一个方面中，形成包括衬底，设置在衬底上的第一绝缘体，设置在第一绝缘体上的第二绝缘体和设置在第二绝缘体上的2D材料的组件。 在2D材料和衬底之间施加第一电压。 通过施加在2D材料和衬底之间的第一电压，在2D材料和位于2D材料附近的探针之间施加第二电压。 去除2D材料和探头之间的第二电压。 去除2D材料和衬底之间的第一电压。 当施加第二电压时，靠近探针的2D材料的一部分与2D材料的其余部分具有不同的电子密度。