公开(公告)号：US20090011224A1

公开(公告)日：2009-01-08

申请号：US12167671

申请日：2008-07-03

申请人： Ganapathi Subramaniam NAGARAJAN ,  Juwon LEE ,  Tae Won KANG

发明人： Ganapathi Subramaniam NAGARAJAN ,  Juwon LEE ,  Tae Won KANG

IPC分类号： B32B5/16 ,  C25D9/04 ,  C25D5/10 ,  C25D5/12

CPC分类号： C25D9/04 ,  C25D1/006 ,  C25D1/02 ,  C25D5/54 ,  Y10T428/256

摘要： In an aqueous solution of a zinc salt, counter, reference and working electrodes are placed, and an electric potential is applied across the working and reference electrodes. A gas including oxygen and an inert gas is introduced into the aqueous solution. Responsive to these conditions an array of zinc oxide nanostructures grows on a conductive nucleation plate that is a part of the working electrode. The nanostructures have sharp tips, have a more efficient electron emissivity than nanorods made from other materials, and can be used in fabricating field emission lamps and displays.

摘要翻译： 在锌盐的水溶液中，放置计数器，参考电极和工作电极，并且在工作电极和参考电极之间施加电位。 将包括氧气和惰性气体的气体引入水溶液中。 响应于这些条件，氧化锌纳米结构的阵列在作为工作电极的一部分的导电成核板上生长。 纳米结构具有尖锐的尖端，比由其他材料制成的纳米棒具有更高的电子发射率，并且可用于制造场致发射灯和显示器。

公开(公告)号：US20160064249A1

公开(公告)日：2016-03-03

申请号：US14833407

申请日：2015-08-24

申请人： Dillon Wong ,  Jairo Velasco, JR. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

发明人： Dillon Wong ,  Jairo Velasco, JR. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

IPC分类号： H01L21/326 ,  H01L21/479 ,  H01L21/02

CPC分类号： H01L21/326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/2254 ,  H01L21/2256 ,  H01L21/479 ,  H01L22/14 ,  H01L29/1606

摘要： This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

摘要翻译： 本公开提供了与局部掺杂二维（2D）材料有关的系统，方法和装置。 在一个方面中，形成包括衬底，设置在衬底上的第一绝缘体，设置在第一绝缘体上的第二绝缘体和设置在第二绝缘体上的2D材料的组件。 在2D材料和衬底之间施加第一电压。 通过施加在2D材料和衬底之间的第一电压，在2D材料和位于2D材料附近的探针之间施加第二电压。 去除2D材料和探头之间的第二电压。 去除2D材料和衬底之间的第一电压。 当施加第二电压时，靠近探针的2D材料的一部分与2D材料的其余部分具有不同的电子密度。

公开(公告)号：US09449851B2

公开(公告)日：2016-09-20

申请号：US14833407

申请日：2015-08-24

申请人： Dillon Wong ,  Jairo Velasco, Jr. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

发明人： Dillon Wong ,  Jairo Velasco, Jr. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

IPC分类号： H01L21/20 ,  H01L21/326 ,  H01L21/479 ,  H01L21/225 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L21/326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/2254 ,  H01L21/2256 ,  H01L21/479 ,  H01L22/14 ,  H01L29/1606

摘要： This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

摘要翻译： 本公开提供了与局部掺杂二维（2D）材料有关的系统，方法和装置。 在一个方面中，形成包括衬底，设置在衬底上的第一绝缘体，设置在第一绝缘体上的第二绝缘体和设置在第二绝缘体上的2D材料的组件。 在2D材料和衬底之间施加第一电压。 通过施加在2D材料和衬底之间的第一电压，在2D材料和位于2D材料附近的探针之间施加第二电压。 去除2D材料和探头之间的第二电压。 去除2D材料和衬底之间的第一电压。 当施加第二电压时，靠近探针的2D材料的一部分与2D材料的其余部分具有不同的电子密度。