公开(公告)号：US09449851B2

公开(公告)日：2016-09-20

申请号：US14833407

申请日：2015-08-24

申请人： Dillon Wong ,  Jairo Velasco, Jr. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

发明人： Dillon Wong ,  Jairo Velasco, Jr. ,  Long Ju ,  Salman Kahn ,  Juwon Lee ,  Chad E. Germany ,  Alexander K. Zettl ,  Feng Wang ,  Michael F. Crommie

IPC分类号： H01L21/20 ,  H01L21/326 ,  H01L21/479 ,  H01L21/225 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L21/326 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/2254 ,  H01L21/2256 ,  H01L21/479 ,  H01L22/14 ,  H01L29/1606

摘要： This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

摘要翻译： 本公开提供了与局部掺杂二维（2D）材料有关的系统，方法和装置。 在一个方面中，形成包括衬底，设置在衬底上的第一绝缘体，设置在第一绝缘体上的第二绝缘体和设置在第二绝缘体上的2D材料的组件。 在2D材料和衬底之间施加第一电压。 通过施加在2D材料和衬底之间的第一电压，在2D材料和位于2D材料附近的探针之间施加第二电压。 去除2D材料和探头之间的第二电压。 去除2D材料和衬底之间的第一电压。 当施加第二电压时，靠近探针的2D材料的一部分与2D材料的其余部分具有不同的电子密度。

公开(公告)号：US07948042B2

公开(公告)日：2011-05-24

申请号：US12397183

申请日：2009-03-03

申请人： Chun Ning Lau ,  Gang Liu ,  Jairo Velasco, Jr.

发明人： Chun Ning Lau ,  Gang Liu ,  Jairo Velasco, Jr.

IPC分类号： H01L29/84

CPC分类号： G11C11/18 ,  H01L21/0272 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/78684

摘要： A multi-level lithography processes for the fabrication of suspended structures are presented. The process is based on the differential exposure and developing conditions of several a plurality of resist layers, without harsher processes, such as etching of sacrificial layers or the use of hardmasks. These manufacturing processes are readily suited for use with systems that are chemically and/or mechanically sensitive, such as graphene. Graphene p-n-p junctions with suspended top gates formed through these processes exhibit high mobility and control of local doping density and type. This fabrication technique may be further extended to fabricate other types of suspended structures, such as local current carrying wires for inducing local magnetic fields, a point contact for local injection of current, and moving parts in microelectromechanical devices.

摘要翻译： 提出了一种用于制造悬挂结构的多级光刻工艺。 该方法基于若干多个抗蚀剂层的差别曝光和显影条件，而不需要更严格的工艺，例如蚀刻牺牲层或使用硬掩模。 这些制造方法容易适用于化学和/或机械敏感的系统，例如石墨烯。 通过这些方法形成的具有悬浮顶栅的石墨烯p-n-p结表现出高迁移率和局部掺杂密度和类型的控制。 该制造技术可以进一步扩展到制造其他类型的悬挂结构，例如用于诱导局部磁场的局部电流承载线，用于局部注入电流的点接触和微机电装置中的移动部件。