公开(公告)号：US08576207B2

公开(公告)日：2013-11-05

申请号：US12767002

申请日：2010-04-26

Applicant: Chang-Ho Tseng

Inventor： Chang-Ho Tseng

IPC: G09G5/00

CPC classification number: H01L27/3276 ,  H01L27/3265

Abstract: A system for displaying images is provided. The system includes a self-emission type display device including a substrate, a first sub-pixel unit disposed on the substrate, and a second sub-pixel unit disposed on the substrate and adjacent to the first sub-pixel unit. Each of the first and second sub-pixel units comprises a light-emitting device, a power line electrically connected to the light-emitting device, and a storage capacitor having an electrode electrically connected to the power line. The electrodes of the storage capacitors of the first and second sub-pixel units are formed of a continuous conductive layer, such that the power lines of the first and second sub-pixel units are electrically connected to each other through the continuous conductive layer.

Abstract translation: 提供了一种用于显示图像的系统。 该系统包括自发射型显示装置，其包括基板，设置在基板上的第一子像素单元和设置在基板上并与第一子像素单元相邻的第二子像素单元。 第一子像素单元和第二子像素单元中的每一个包括发光器件，电连接到发光器件的电力线以及具有电连接到电力线的电极的存储电容器。 第一和第二子像素单元的存储电容器的电极由连续导电层形成，使得第一和第二子像素单元的电力线通过连续导电层彼此电连接。

公开(公告)号：US07915103B2

公开(公告)日：2011-03-29

申请号：US12434032

申请日：2009-05-01

Applicant: Chun-Yen Liu ,  Chang-Ho Tseng

Inventor： Chun-Yen Liu ,  Chang-Ho Tseng

IPC: H01L29/04 ,  H01L27/146

CPC classification number: H01L29/04 ,  H01L27/1285

Abstract: The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon layer become a polysilicon layer, forming a patterned absorbing layer to cover an active area pattern of a driving TFT and to expose portions of the polysilicon layer, performing a second crystallization process to re-crystallization the exposed portions of the polysilicon layer so that the exposed portions of the polysilicon layer has a different grain structure from the grain structure of the driving TFT, removing the patterned absorbing layer, and removing portions of the polysilicon layer to form an active area of the driving TFT and an active area of a switching TFT area in the exposed portions of the polysilicon layer of each sub-pixel.

Abstract translation: 制造平板显示器的方法包括执行第一结晶处理以使玻璃基板上的非晶硅层再结晶，以使非晶硅层变成多晶硅层，形成图案化吸收层以覆盖有源区图案 驱动TFT并暴露多晶硅层的部分，执行第二结晶处理以使多晶硅层的暴露部分重新结晶，使得多晶硅层的暴露部分与驱动TFT的晶粒结构具有不同的晶粒结构， 去除图案化的吸收层，并且去除多晶硅层的部分以形成驱动TFT的有源区域和每个子像素的多晶硅层的暴露部分中的开关TFT区域的有源区域。

公开(公告)号：US07897445B2

公开(公告)日：2011-03-01

申请号：US11709480

申请日：2007-02-21

Applicant: Shih Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai ,  Chang-Ho Tseng

Inventor： Shih Chang Chang ,  De-Hua Deng ,  Chun-Hsiang Fang ,  Yaw-Ming Tsai ,  Chang-Ho Tseng

IPC: H01L21/336

CPC classification number: H01L29/66757 ,  H01L29/78621 ,  H01L29/78645

Abstract: A self-aligned LDD TFT and a fabrication method thereof. The method includes providing a semiconductor layer. A first masking layer is provided over a first region of the semiconductor layer, said first masking layer comprising a material that provide a permeable barrier to a dopant. The semiconductor layer is exposed, including the first region covered by the first masking layer, to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking layer.

Abstract translation: 自对准LDD TFT及其制造方法。 该方法包括提供半导体层。 第一掩模层设置在半导体层的第一区域上，所述第一掩蔽层包括为掺杂剂提供可渗透屏障的材料。 半导体层被包括第一掩模层覆盖的第一区域暴露于掺杂剂，其中由第一掩模层覆盖的第一区域与未被第一掩模层覆盖的第二区域相比，轻掺杂掺杂剂 。

公开(公告)号：US07812519B2

公开(公告)日：2010-10-12

申请号：US12009187

申请日：2008-01-16

Applicant: Shih-Chang Chang ,  Chang-Ho Tseng ,  Shih-Pin Wang

Inventor： Shih-Chang Chang ,  Chang-Ho Tseng ,  Shih-Pin Wang

IPC: H01J1/62

CPC classification number: H05B33/22 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/5265 ,  H01L51/5271 ,  H01L2251/5315

Abstract: The invention provides a top emitting organic electroluminescent display comprising a substrate including a display area. A conductive layer is disposed on the substrate, electrically connecting the substrate. A reflective layer is disposed on the display region of the substrate. A dielectric layer is formed on the conductive layer, the reflective layer and the substrate, with a via exposing the conductive layer. A transparent electrode layer is disposed on the dielectric layer, electrically connecting the conductive layer through the via. An organic electroluminescent layer corresponding to the display region is disposed on the transparent electrode layer.

Abstract translation: 本发明提供了一种顶部发射的有机电致发光显示器，其包括包括显示区域的基板。 导电层设置在基板上，电连接基板。 反射层设置在基板的显示区域上。 在导电层，反射层和衬底上形成介电层，通孔露出导电层。 透明电极层设置在电介质层上，通过通孔电连接导电层。 对应于显示区域的有机电致发光层设置在透明电极层上。

公开(公告)号：US20090128736A1

公开(公告)日：2009-05-21

申请号：US12272102

申请日：2008-11-17

Applicant: Chuan-Yi CHAN ,  Du-Zen Peng ,  Chang-Ho Tseng

Inventor： Chuan-Yi CHAN ,  Du-Zen Peng ,  Chang-Ho Tseng

IPC: G02F1/13357

CPC classification number: H01L51/5271 ,  G02F1/133553 ,  G02F1/133555 ,  G02F2201/50 ,  H01L27/3244 ,  H01L51/5203 ,  H01L2227/323 ,  H01L2251/5315

Abstract: A display device including a substrate, a driving element, a reflective layer and a first auxiliary layer is provided. The substrate has a first area and a second area. The driving element is placed within the first area. The reflective layer is placed above the first area and at least a portion of the second area and coupled to the driving element. The first auxiliary layer is placed on the reflective layer above the first area. The first auxiliary layer improves the electrical characteristic of the reflective layer. A reflectance of the first auxiliary layer is not larger than a reflectance of the reflective layer.

Abstract translation: 提供了包括基板，驱动元件，反射层和第一辅助层的显示装置。 衬底具有第一区域和第二区域。 驱动元件放置在第一区域内。 反射层被放置在第一区域上方和第二区域的至少一部分上并且耦合到驱动元件。 第一辅助层被放置在第一区域上方的反射层上。 第一辅助层改善了反射层的电特性。 第一辅助层的反射率不大于反射层的反射率。

公开(公告)号：US07507998B2

公开(公告)日：2009-03-24

申请号：US11537121

申请日：2006-09-29

Applicant: Chang-Ho Tseng

Inventor： Chang-Ho Tseng

IPC: H01L29/786 ,  H01L27/14 ,  H01L29/94

CPC classification number: H01L27/3272 ,  H01L27/1255 ,  H01L27/3265

Abstract: An exemplary embodiment of a system comprises an active matrix organic electroluminescent device, having a substrate, and a plurality of scan lines and data lines disposed on the substrate, for defining a plurality of pixel regions. Each pixel structure comprises: a switching thin film transistor, a driving thin film transistor, and a storage capacitor. The switching TFT has a light-shielding layer adapted for preventing the sunlight from being incident into the switching TFT. The driving TFT is a bottom gate thin film transistor and have advantages of precisely controlling the current provided to the organic electroluminescent diode. Further, since the storage capacitor has a multilayer structure and occupies a reduced pixel area, the aperture ratio of the pixel structure can be increased.

Abstract translation: 系统的示例性实施例包括具有衬底的有源矩阵有机电致发光器件，以及设置在衬底上的多条扫描线和数据线，用于限定多个像素区域。 每个像素结构包括：开关薄膜晶体管，驱动薄膜晶体管和存储电容器。 开关TFT具有适于防止太阳光入射到开关TFT中的遮光层。 驱动TFT是底栅薄膜晶体管，并且具有精确地控制提供给有机电致发光二极管的电流的优点。 此外，由于存储电容器具有多层结构并且占据减小的像素面积，因此可以增加像素结构的开口率。

公开(公告)号：US07449697B2

公开(公告)日：2008-11-11

申请号：US11326247

申请日：2006-01-04

Applicant: Chang-Ho Tseng ,  Du-Zen Peng ,  Yaw-Ming Tsai

Inventor： Chang-Ho Tseng ,  Du-Zen Peng ,  Yaw-Ming Tsai

IPC: F21V9/16

CPC classification number: H01L27/3269 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/045 ,  G09G2360/148

Abstract: Organic electroluminescent devices are disclosed. A representative device incorporates a substrate that comprises a control area and a sensitive area. A switch device and a driving device are disposed overlying the control area. A photo sensor is disposed overlying the sensitive area. An OLED element is disposed in the sensitive area and illuminating to the photo sensor. A capacitor is coupled to the photo sensor and the driving device, wherein a photo current corresponding to the brightness of the OLED element is generated in the photo sensor responsive to the OLED element illuminating the photo sensor such that a voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element.

Abstract translation: 公开了有机电致发光器件。 代表性的装置包括一个包括一个控制区域和一个敏感区域的基板。 开关装置和驱动装置设置在控制区域的上方。 光敏传感器位于敏感区域的上方。 OLED元件设置在敏感区域中并照射到光传感器。 电容器耦合到光传感器和驱动装置，其中响应于照射光传感器的OLED元件，在光传感器中产生对应于OLED元件的亮度的光电流，使得电容器的电压由 光电流以控制通过驱动装置的电流，从而改变OLED元件的照明。

公开(公告)号：US20080185596A1

公开(公告)日：2008-08-07

申请号：US11670582

申请日：2007-02-02

Applicant: Chang-Ho Tseng ,  Yu-Chun Shih ,  Hsuan-Chih Huang

Inventor： Chang-Ho Tseng ,  Yu-Chun Shih ,  Hsuan-Chih Huang

IPC: H01L31/12 ,  H01L33/00

CPC classification number: H01L31/113 ,  H01L31/167

Abstract: Embodiments of a system for displaying images include a light emitting device with a plurality of photo sensors. Each photo sensor includes a PIN diode composed of an N+ doped semiconductor region, a P+ doped semiconductor region, and an intrinsic semiconductor region formed therebetween. An insulated control gate overlaps the intrinsic semiconductor region and is operative to provide the PIN diode with a controllable electric characteristic with respect to a saturation photo current at a saturation voltage.

Abstract translation: 用于显示图像的系统的实施例包括具有多个光传感器的发光装置。 每个光电传感器包括由掺杂N + N掺杂的半导体区域，掺杂POD的半导体区域和在其间形成的本征半导体区域构成的PIN二极管。 绝缘控制栅极与本征半导体区域重叠，并且可操作地为PIN二极管提供相对于饱和电压下的饱和光电流的可控电特性。

公开(公告)号：US20070152180A1

公开(公告)日：2007-07-05

申请号：US11326247

申请日：2006-01-04

Applicant: Chang-Ho Tseng ,  Du-Zen Peng ,  Yaw-Ming Tsai

Inventor： Chang-Ho Tseng ,  Du-Zen Peng ,  Yaw-Ming Tsai

IPC: G01N23/04

CPC classification number: H01L27/3269 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/045 ,  G09G2360/148

Abstract: Organic electroluminescent devices are disclosed. A representative device incorporates a substrate that comprises a control area and a sensitive area. A switch device and a driving device are disposed overlying the control area. A photo sensor is disposed overlying the sensitive area. An OLED element is disposed in the sensitive area and illuminating to the photo sensor. A capacitor is coupled to the photo sensor and the driving device, wherein a photo current corresponding to the brightness of the OLED element is generated in the photo sensor responsive to the OLED element illuminating the photo sensor such that a voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element.

Abstract translation: 公开了有机电致发光器件。 代表性的装置包括一个包括一个控制区域和一个敏感区域的基板。 开关装置和驱动装置设置在控制区域的上方。 光敏传感器位于敏感区域的上方。 OLED元件设置在敏感区域中并照射到光传感器。 电容器耦合到光传感器和驱动装置，其中响应于照射光传感器的OLED元件，在光传感器中产生对应于OLED元件的亮度的光电流，使得电容器的电压由 光电流以控制通过驱动装置的电流，从而改变OLED元件的照明。

公开(公告)号：US20110134045A1

公开(公告)日：2011-06-09

申请号：US13028194

申请日：2011-02-15

Applicant: Chuan-Yi Chan ,  Chun-Yen Liu ,  Chang-Ho Tseng

Inventor： Chuan-Yi Chan ,  Chun-Yen Liu ,  Chang-Ho Tseng

IPC: G06F3/02 ,  H01L33/08 ,  H01L33/16

CPC classification number: H01L27/1237 ,  H01L27/1229 ,  H01L27/1281

Abstract: A method for fabricating organic electroluminescent devices is disclosed. The method comprises providing a substrate divided into first and second regions, forming an amorphous silicon layer on the substrate, forming a protection film on the amorphous silicon layer within the second region, performing an excimer laser annealing process on the amorphous silicon layer for converting it to a polysilicon layer, removing the protection film, patterning the polysilicon layer, thus a first patterned polysilicon layer in the first region and a second patterned polysilicon layer in the second region are formed. A resultant organic electroluminescent device is obtained. Specifically, the grain size of the first patterned polysilicon layer is large than that of the second patterned polysilicon layer.

Abstract translation: 公开了一种制造有机电致发光器件的方法。 该方法包括提供分为第一和第二区域的衬底，在衬底上形成非晶硅层，在第二区域内的非晶硅层上形成保护膜，对非晶硅层进行准分子激光退火处理以转换它 去除保护膜，图案化多晶硅层，从而形成第一区域中的第一图案化多晶硅层和第二区域中的第二图案化多晶硅层。 得到有机电致发光器件。 具体地，第一图案化多晶硅层的晶粒尺寸大于第二图案化多晶硅层的晶粒尺寸。