公开(公告)号：US08422557B2

公开(公告)日：2013-04-16

申请号：US11740559

申请日：2007-04-26

申请人： Chen Kuo Chiang ,  Hwai Chung Fei ,  Shang Hong Lai

发明人： Chen Kuo Chiang ,  Hwai Chung Fei ,  Shang Hong Lai

IPC分类号： H04N7/12

CPC分类号： H04N19/573 ,  H04N19/533 ,  H04N19/56 ,  H04N19/57 ,  H04N19/61

摘要： A motion estimation method for video compression comprises the following steps. First, an initial simplex comprising three points is determined based on motion vectors in blocks of a current frame and a previous frame, and a point having a largest function value among the three points is replaced with a point having a smaller function value to form a simplex. The replacement is repeated until two points of the three points of the simplex converge to a same point. The iteration is performed by downhill simplex search including operations of reflection, expansion, contraction and shrinkage to find a point for replacement. The motion estimation method for video compression can also use multi-reference frames. An initial simplex comprising four points is determined based on motion vectors of a current frame with reference to a plurality of previous frames, and a point having a largest function value among the four points is repeatedly replaced with a point having a smaller function value to form a simplex until two points of the four points of the simplex converge to a same point.

摘要翻译： 视频压缩的运动估计方法包括以下步骤。 首先，基于当前帧和先前帧的块中的运动矢量确定包括三个点的初始单形，并且具有较小函数值的点中的三个点中具有最大函数值的点被替换以形成 单身。 重复该替换，直到单纯形的三个点的两个点收敛到同一点。 迭代是通过下坡单工搜索来进行的，包括反射，膨胀，收缩和收缩的操作，以找到替换点。 视频压缩的运动估计方法也可以使用多参考帧。 基于参考多个先前帧的当前帧的运动矢量确定包括四个点的初始单形，并且用具有较小函数值的点重复地替换四个点中具有最大函数值的点，以形成 单纯形，直到单点的四点的两点收敛到同一点。

公开(公告)号：US08329597B2

公开(公告)日：2012-12-11

申请号：US13041451

申请日：2011-03-07

申请人： Chan-Lon Yang ,  Shih-Fang Tzou ,  Chen-Kuo Chiang

发明人： Chan-Lon Yang ,  Shih-Fang Tzou ,  Chen-Kuo Chiang

IPC分类号： H01L21/31

CPC分类号： H01L21/28185 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A semiconductor process having a dielectric layer including metal oxide is provided. The semiconductor process includes: A substrate is provided. A dielectric layer including metal oxide is formed on the substrate, wherein the dielectric layer has a plurality of oxygen-related vacancies. A first oxygen-importing process is performed to fill the oxygen-related vacancies with oxygen. Otherwise, three MOS transistor processes are also provided, each of which has a gate dielectric layer including a high dielectric constant, and a first oxygen-importing process is performed to fill the oxygen-related vacancies with oxygen.

摘要翻译： 提供了具有包括金属氧化物的电介质层的半导体工艺。 半导体工艺包括：提供衬底。 在基板上形成包括金属氧化物的电介质层，其中介电层具有多个与氧有关的空位。 进行第一氧气进入处理以用氧填充与氧相关的空位。 另外，还提供三个MOS晶体管工艺，每个MOS晶体管工艺都具有包括高介电常数的栅极电介质层，并且执行第一氧气进入工艺以用氧填充与氧相关的空位。

公开(公告)号：US20120231600A1

公开(公告)日：2012-09-13

申请号：US13041451

申请日：2011-03-07

申请人： Chan-Lon Yang ,  Shih-Fang Tzou ,  Chen-Kuo Chiang

发明人： Chan-Lon Yang ,  Shih-Fang Tzou ,  Chen-Kuo Chiang

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L21/28185 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A semiconductor process having a dielectric layer including metal oxide is provided. The semiconductor process includes: A substrate is provided. A dielectric layer including metal oxide is formed on the substrate, wherein the dielectric layer has a plurality of oxygen-related vacancies. A first oxygen-importing process is performed to fill the oxygen-related vacancies with oxygen. Otherwise, three MOS transistor processes are also provided, each of which has a gate dielectric layer including a high dielectric constant, and a first oxygen-importing process is performed to fill the oxygen-related vacancies with oxygen.

摘要翻译： 提供了具有包括金属氧化物的电介质层的半导体工艺。 半导体工艺包括：提供衬底。 在基板上形成包括金属氧化物的电介质层，其中介电层具有多个与氧有关的空位。 进行第一氧气进入处理以用氧填充与氧相关的空位。 另外，还提供三个MOS晶体管工艺，每个MOS晶体管工艺都具有包括高介电常数的栅极电介质层，并且执行第一氧气进入工艺以用氧填充与氧相关的空位。

公开(公告)号：US07601404B2

公开(公告)日：2009-10-13

申请号：US11160108

申请日：2005-06-09

申请人： Ying-Wei Yen ,  Yun-Ren Wang ,  Shu-Yen Chan ,  Chen-Kuo Chiang ,  Chung-Yih Chen

发明人： Ying-Wei Yen ,  Yun-Ren Wang ,  Shu-Yen Chan ,  Chen-Kuo Chiang ,  Chung-Yih Chen

IPC分类号： B05D3/02 ,  C23C16/34

CPC分类号： H01J37/321 ,  H01J2237/3387 ,  H01L21/3145

摘要： A method for switching decoupled plasma nitridation (DPN) processes of different doses, which is able to decrease the switching time, is provided. According to the method, a dummy wafer is inserted into a chamber, a process gas introduced is ignited into plasma, and then a DPN doping process of the next dose is performed on the dummy wafer. The nitrogen concentration of the chamber is thus adjusted rapidly to switch to the DPN process of the next dose. In addition, after several cycles of the above steps are repeated, a dummy wafer is inserted into the chamber, and a complete DPN process of the next dose is performed on the dummy wafer. This process is performed several times before switching to the next DPN process.

摘要翻译： 提供了能够减少切换时间的切换不同剂量的去耦等离子体氮化（DPN）过程的方法。 根据该方法，将虚设晶片插入到室内，将引入的工艺气体点燃到等离子体中，然后在虚设晶片上进行下一剂量的DPN掺杂工序。 因此，腔室的氮浓度被快速调整以转换到下一剂量的DPN过程。 此外，在重复上述步骤的几个循环之后，将虚设晶片插入到腔室中，并且在虚拟晶片上执行下一剂量的完整DPN处理。 该过程在切换到下一个DPN过程之前进行几次。

公开(公告)号：US20060280876A1

公开(公告)日：2006-12-14

申请号：US11160108

申请日：2005-06-09

申请人： Ying-Wei Yen ,  Yun-Ren Wang ,  Shu-Yen Chan ,  Chen-Kuo Chiang ,  Chung-Yih Chen

发明人： Ying-Wei Yen ,  Yun-Ren Wang ,  Shu-Yen Chan ,  Chen-Kuo Chiang ,  Chung-Yih Chen

IPC分类号： H05H1/24

CPC分类号： H01J37/321 ,  H01J2237/3387 ,  H01L21/3145

摘要： A method for switching decoupled plasma nitridation (DPN) processes of different doses, which is able to decrease the switching time, is provided. According to the method, a dummy wafer is inserted into a chamber, a process gas introduced is ignited into plasma, and then a DPN doping process of the next dose is performed on the dummy wafer. The nitrogen concentration of the chamber is thus adjusted rapidly to switch to the DPN process of the next dose. In addition, after several cycles of the above steps are repeated, a dummy wafer is inserted into the chamber, and a complete DPN process of the next dose is performed on the dummy wafer. This process is performed several times before switching to the next DPN process.

摘要翻译： 提供了能够减少切换时间的切换不同剂量的去耦等离子体氮化（DPN）过程的方法。 根据该方法，将虚设晶片插入到室内，将引入的工艺气体点燃到等离子体中，然后在虚设晶片上进行下一剂量的DPN掺杂工序。 因此，腔室的氮浓度被快速调整以转换到下一剂量的DPN过程。 此外，在重复上述步骤的几个循环之后，将虚设晶片插入到腔室中，并且在虚拟晶片上执行下一剂量的完整DPN处理。 该过程在切换到下一个DPN过程之前进行几次。

公开(公告)号：US20130307126A1

公开(公告)日：2013-11-21

申请号：US13474730

申请日：2012-05-18

申请人： Chen-Kuo Chiang ,  Chun-Hsien Lin

发明人： Chen-Kuo Chiang ,  Chun-Hsien Lin

IPC分类号： H01L29/02 ,  H01L21/31

CPC分类号： H01L21/823462 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  H01L27/092 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： A semiconductor structure includes a stacked metal oxide layer on a substrate, wherein the stacked metal oxide layer includes a first metal oxide layer, a second metal oxide layer, and a third metal oxide layer from top to bottom, and the energy bandgap of the second metal oxide layer is lower than the energy bandgap of the first metal oxide layer and that of the third metal oxide layer. The semiconductor structure includes a metal oxide layer on a substrate, wherein the energy bandgap of the metal oxide layer changes along a direction perpendicular to the surface of the substrate. The present invention also provides a semiconductor process forming said semiconductor structure.

摘要翻译： 半导体结构包括在基板上的堆叠的金属氧化物层，其中堆叠的金属氧化物层包括从顶部到底部的第一金属氧化物层，第二金属氧化物层和第三金属氧化物层，以及第二金属氧化物层的能带隙 金属氧化物层比第一金属氧化物层和第三金属氧化物层的能带隙低。 半导体结构包括在基板上的金属氧化物层，其中金属氧化物层的能带隙沿着垂直于衬底表面的方向改变。 本发明还提供了形成所述半导体结构的半导体工艺。

公开(公告)号：US20120282783A1

公开(公告)日：2012-11-08

申请号：US13099363

申请日：2011-05-03

申请人： Jui-Chen Chang ,  Chen-Kuo Chiang ,  Chin-Fu Lin ,  Chih-Chien Liu

发明人： Jui-Chen Chang ,  Chen-Kuo Chiang ,  Chin-Fu Lin ,  Chih-Chien Liu

IPC分类号： H01L21/469

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/0228 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/66545

摘要： A method for fabricating high-k dielectric layer is disclosed. The method includes the steps of: providing a substrate; and forming a plurality of high-k dielectric layers by using a plurality of reacting gases to perform a plurality of process stages on the surface of the substrate, wherein at least one of the reacting gases comprises different flow rate in the fabrication stages.

摘要翻译： 公开了一种用于制造高k电介质层的方法。 该方法包括以下步骤：提供衬底; 以及通过使用多个反应气体形成多个高k电介质层，以在所述衬底的表面上执行多个工艺阶段，其中至少一个所述反应气体在所述制造阶段包括不同的流速。

公开(公告)号：US20080159392A1

公开(公告)日：2008-07-03

申请号：US11740559

申请日：2007-04-26

申请人： Chen Kuo Chiang ,  Hwai Chung Fei ,  Shang Hong Lai

发明人： Chen Kuo Chiang ,  Hwai Chung Fei ,  Shang Hong Lai

IPC分类号： H04B1/66

CPC分类号： H04N19/573 ,  H04N19/533 ,  H04N19/56 ,  H04N19/57 ,  H04N19/61

摘要： A motion estimation method for video compression comprises the following steps. First, an initial simplex comprising three points is determined based on motion vectors in blocks of a current frame and a previous frame, and a point having a largest function value among the three points is replaced with a point having a smaller function value to form a simplex. The replacement is repeated until two points of the three points of the simplex converge to a same point. The iteration is performed by downhill simplex search including operations of reflection, expansion, contraction and shrinkage to find a point for replacement. The motion estimation method for video compression can also use multi-reference frames. An initial simplex comprising four points is determined based on motion vectors of a current frame with reference to a plurality of previous frames, and a point having a largest function value among the four points is repeatedly replaced with a point having a smaller function value to form a simplex until two points of the four points of the simplex converge to a same point.

摘要翻译： 视频压缩的运动估计方法包括以下步骤。 首先，基于当前帧和先前帧的块中的运动矢量确定包括三个点的初始单形，并且具有较小函数值的点中的三个点中具有最大函数值的点被替换以形成 单身。 重复该替换，直到单纯形的三个点的两个点收敛到同一点。 迭代是通过下坡单工搜索来进行的，包括反射，膨胀，收缩和收缩的操作，以找到替换点。 视频压缩的运动估计方法也可以使用多参考帧。 基于参考多个先前帧的当前帧的运动矢量确定包括四个点的初始单形，并且用具有较小函数值的点重复地替换四个点中具有最大函数值的点，以形成 单纯形，直到单点的四点的两点收敛到同一点。

公开(公告)号：US09478627B2

公开(公告)日：2016-10-25

申请号：US13474730

申请日：2012-05-18

申请人： Chen-Kuo Chiang ,  Chun-Hsien Lin

发明人： Chen-Kuo Chiang ,  Chun-Hsien Lin

IPC分类号： H01L29/02 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/823462 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  H01L27/092 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

摘要： A semiconductor structure includes a stacked metal oxide layer on a substrate, wherein the stacked metal oxide layer includes a first metal oxide layer, a second metal oxide layer, and a third metal oxide layer from top to bottom, and the energy bandgap of the second metal oxide layer is lower than the energy bandgap of the first metal oxide layer and that of the third metal oxide layer. The semiconductor structure includes a metal oxide layer on a substrate, wherein the energy bandgap of the metal oxide layer changes along a direction perpendicular to the surface of the substrate. The present invention also provides a semiconductor process forming said semiconductor structure.

摘要翻译： 半导体结构包括在基板上的堆叠的金属氧化物层，其中堆叠的金属氧化物层包括从顶部到底部的第一金属氧化物层，第二金属氧化物层和第三金属氧化物层，以及第二金属氧化物层的能带隙 金属氧化物层比第一金属氧化物层和第三金属氧化物层的能带隙低。 半导体结构包括在基板上的金属氧化物层，其中金属氧化物层的能带隙沿着垂直于衬底表面的方向改变。 本发明还提供了形成所述半导体结构的半导体工艺。