摘要:
Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.
摘要:
A waste roll web product processing system includes a first roller conveyor, a push bar conveyor, a second roller conveyor, a guide device and a cutter. The push bar conveyor pushes waste roll web products from the first roller conveyor to the second roller conveyor for enabling the second roller conveyor to deliver the waste roll web products to the guide device so that the waste roll web products fall downwards along the guide device one after another and the cutter cuts off each falling waste roll web product for enabling the web material and shaft of each waste roll web product to be separately recycled.
摘要:
A waste roll web product processing system includes a first roller conveyor, a push bar conveyor, a second roller conveyor, a guide device and a cutter. The push bar conveyor pushes waste roll web products from the first roller conveyor to the second roller conveyor for enabling the second roller conveyor to deliver the waste roll web products to the guide device so that the waste roll web products fall downwards along the guide device one after another and the cutter cuts off each falling waste roll web product for enabling the web material and shaft of each waste roll web product to be separately recycled.
摘要:
Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.