公开(公告)号：US07510974B2

公开(公告)日：2009-03-31

申请号：US11308794

申请日：2006-05-05

Applicant: Chih-Yueh Li ,  Kai-Chun Yang ,  Tzu-Yi Chuang ,  Chien-Hsuan Chen ,  Min-Hao Yeh

Inventor： Chih-Yueh Li ,  Kai-Chun Yang ,  Tzu-Yi Chuang ,  Chien-Hsuan Chen ,  Min-Hao Yeh

IPC: H01L21/302

CPC classification number: H01L21/7684 ,  B24B37/0056 ,  B24B37/042 ,  H01L21/31053 ,  H01L21/3212 ,  Y10T156/1056

Abstract: A CMP process is provided. A first polishing process on a wafer is performed using a first hard polishing pad with a first slurry. Then, a buffering process on the wafer is performed using a soft polishing pad with a cleaning agent to buffer the pH value in the first polishing process and to remove at least portion of the first slurry and the cleaning agent by the contact with the first soft polishing pad simultaneously. Thereafter, a second polishing process on the wafer is performed using a second hard polishing pad with a second slurry such that the pH value after the buffering process is between the pH value in the first polishing process and the pH value in the second polishing process. The method can avoid the scratch issue of wafer surface by particles resulting from pH shock and cross contamination.

Abstract translation: 提供CMP工艺。 使用具有第一浆料的第一硬质抛光垫进行晶片上的第一抛光工艺。 然后，使用具有清洁剂的软抛光垫进行晶片上的缓冲处理，以缓冲第一抛光工艺中的pH值，并且通过与第一软件的接触来去除第一浆料和清洁剂的至少一部分 抛光垫同时。 此后，使用具有第二浆料的第二硬质抛光垫进行晶片上的第二抛光工艺，使得缓冲过程之后的pH值在第一抛光工艺中的pH值和第二抛光工艺中的pH值之间。 该方法可以避免由pH冲击和交叉污染导致的颗粒对晶片表面的划痕问题。

公开(公告)号：US20070259525A1

公开(公告)日：2007-11-08

申请号：US11308794

申请日：2006-05-05

Applicant: Chih-Yueh Li ,  Kai-Chun Yang ,  Tzu-Yi Chuang ,  Chien-Hsuan Chen ,  Min-Hao Yeh

Inventor： Chih-Yueh Li ,  Kai-Chun Yang ,  Tzu-Yi Chuang ,  Chien-Hsuan Chen ,  Min-Hao Yeh

IPC: H01L21/461 ,  H01L21/302

CPC classification number: H01L21/7684 ,  B24B37/0056 ,  B24B37/042 ,  H01L21/31053 ,  H01L21/3212 ,  Y10T156/1056

Abstract: A CMP process is provided. A first polishing process on a wafer is performed using a first hard polishing pad with a first slurry. Then, a buffering process on the wafer is performed using a soft polishing pad with a cleaning agent to buffer the pH value in the first polishing process and to remove at least portion of the first slurry and the cleaning agent by the contact with the first soft polishing pad simultaneously. Thereafter, a second polishing process on the wafer is performed using a second hard polishing pad with a second slurry such that the pH value after the buffering process is between the pH value in the first polishing process and the pH value in the second polishing process. The method can avoid the scratch issue of wafer surface by particles resulting from pH shock and cross contamination.

Abstract translation: 提供CMP工艺。 使用具有第一浆料的第一硬质抛光垫进行晶片上的第一抛光工艺。 然后，使用具有清洁剂的软抛光垫进行晶片上的缓冲处理，以缓冲第一抛光工艺中的pH值，并且通过与第一软件的接触来去除第一浆料和清洁剂的至少一部分 抛光垫同时。 此后，使用具有第二浆料的第二硬质抛光垫进行晶片上的第二抛光工艺，使得缓冲过程之后的pH值在第一抛光工艺中的pH值和第二抛光工艺中的pH值之间。 该方法可以避免由pH冲击和交叉污染引起的颗粒对晶片表面的划痕问题。

公开(公告)号：US20080070485A1

公开(公告)日：2008-03-20

申请号：US11532090

申请日：2006-09-14

Applicant: Chien-Hsuan Chen ,  Ho-Da Jiang ,  Chih-Yueh Li ,  Chih-Chin Yang ,  Cheng-Hsun Wu

Inventor： Chien-Hsuan Chen ,  Ho-Da Jiang ,  Chih-Yueh Li ,  Chih-Chin Yang ,  Cheng-Hsun Wu

IPC: B24B1/00

CPC classification number: B24B53/017 ,  B24B37/042

Abstract: A chemical mechanical polishing (CMP) process at least includes a polishing step and an ex-situ conditioning step, and the ex-situ conditioning step must be immediately performed after the polishing step. Therefore, it can save the process time. Furthermore, when applying to a CMP apparatus with several polishing regions, it can integrate these polishing regions having different polishing time in order to shorten total manufacturing time, thereby improving throughput.

Abstract translation: 化学机械抛光（CMP）工艺至少包括抛光步骤和非原位调节步骤，并且必须在抛光步骤之后立即进行外部位置调节步骤。 因此，可以节省处理时间。 此外，当施加到具有多个抛光区域的CMP装置时，可以将具有不同抛光时间的这些抛光区域整合，以缩短总制造时间，从而提高生产量。