公开(公告)号：US08738114B2

公开(公告)日：2014-05-27

申请号：US13145036

申请日：2010-02-09

Applicant: Tom Chih-Chuang Hu ,  Benjamin J. Waghorn ,  Nathan E. Yanasak

Inventor： Tom Chih-Chuang Hu ,  Benjamin J. Waghorn ,  Nathan E. Yanasak

IPC: A61B5/05

CPC classification number: A61K49/0004 ,  A61B5/055 ,  A61K49/06

Abstract: Described herein are systems and methods for quantitatively measuring manganese ion efflux in a subject. In general, the systems and methods compare imaging data from a subject taken over specific periods of time to pharmacokinetic models in order to measure manganese ion efflux rates from an organ in a subject. By understanding the specific location and rate of manganese ion efflux and influx from the organ, it is possible to more accurately correlate calcium ion activity. Calcium ion efflux is associated with a number of biological mechanisms in the subject, and the methods and systems described herein can be used as a diagnostic tool not only for monitoring calcium efflux in the subject but also aid in the treatment of diseases associated with changes in calcium ion efflux.

Abstract translation: 本文描述了用于定量测量受试者中锰离子流出的系统和方法。 通常，系统和方法将来自特定时间段的受试者的成像数据与药代动力学模型进行比较，以测量受试者中器官的锰离子流出速率。 通过了解锰离子流出和器官内流的具体位置和速率，可以更准确地将钙离子活性相关。 钙离子流出与受试者中的许多生物机制相关联，并且本文描述的方法和系统可用作诊断工具，不仅用于监测受试者的钙流出，还有助于治疗与受试者相关的疾病相关的疾病 钙离子流出。

公开(公告)号：US08381580B2

公开(公告)日：2013-02-26

申请号：US13150926

申请日：2011-06-01

Applicant: Kuo-Chih Chuang ,  Hsin-Chieh Chen

Inventor： Kuo-Chih Chuang ,  Hsin-Chieh Chen

IPC: B60C23/02

CPC classification number: B60C23/0494

Abstract: A tire pressure monitoring device with an inclinable valve stem is disclosed. The tire pressure monitoring device includes: a main body having a channel, wherein the channel includes a socket segment near one end thereof; the valve stem being movably fixed to a wheel rim and having a domed end movably received in the socket segment wherein the domed end has a threaded hole axially passing therethrough; and a positioning bolt being positioned in the channel from an opposite end of the channel and coupled with the threaded hole, so that the domed end of the valve stem is movably positioned in the socket segment and when the domed end moves, an angle between the connected valve stem and the main body is changed, thereby allowing the main body to abut against the wheel rim.

Abstract translation: 公开了一种具有可倾斜阀杆的轮胎压力监测装置。 轮胎压力监测装置包括：具有通道的主体，其中所述通道包括在其一端附近的插座段; 所述阀杆可移动地固定到轮缘并且具有可移动地容纳在所述插座段中的圆顶端，其中所述圆顶端具有轴向穿过其中的螺纹孔; 并且定位螺栓从通道的相对端定位在通道中并与螺纹孔联接，使得阀杆的圆顶端可移动地定位在插座段中，并且当圆顶端移动时，角度 连接的阀杆和主体被改变，从而允许主体抵靠轮缘。

公开(公告)号：US20130008380A1

公开(公告)日：2013-01-10

申请号：US13610798

申请日：2012-09-11

Applicant: Chia-Chih CHUANG ,  Yu Huang

Inventor： Chia-Chih CHUANG ,  Yu Huang

IPC: H01L21/203

CPC classification number: H01L21/02568 ,  C23C14/0623 ,  C23C14/228 ,  C23C14/24 ,  H01L21/02614

Abstract: An apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films is provided, including a reaction chamber, a pressure control unit connected with the reaction chamber, a pedestal disposed in the reaction chamber wherein the at least one substrate includes elements of group IB and group IIIA, a first group VIA element supply unit connecting with the reaction chamber for providing vaporized first group VIA elements into the reaction chamber, and a plasma unit disposed in the reaction chamber. In one embodiment, during a reaction in the reaction chamber, the vaporized first group VIA elements flow through the high density plasma region and transform into ionized first group VIA elements, and the ionized first group VIA elements diffuse into the at least one substrate comprising elements of group IB and group IIIA to form a IB-IIIA-VIA2 compound semiconductor thin film thereover.

Abstract translation: 提供一种用于制造IB-IIIA-VIA2化合物半导体薄膜的装置，包括反应室，与反应室连接的压力控制单元，设置在反应室中的基座，其中至少一个基板包括组1B和 组IIIA，与反应室连接的用于将蒸发的第一组VIA元件提供到反应室中的第一组VIA元件供应单元和设置在反应室中的等离子体单元。 在一个实施方案中，在反应室中的反应期间，蒸发的第一组VIA元素流过高密度等离子体区域并转化成电离的第一组VIA元素，并且离子化的第一组VIA元素扩散到至少一个包含元素 的IB和IIIA族以形成IB-IIIA-VIA2化合物半导体薄膜。

公开(公告)号：US20100064791A1

公开(公告)日：2010-03-18

申请号：US12212304

申请日：2008-09-17

Applicant: Kuo-Chih Chuang ,  Hung-Chih Yu

Inventor： Kuo-Chih Chuang ,  Hung-Chih Yu

IPC: B60C23/04

CPC classification number: B60C23/0408 ,  B60C23/0494

Abstract: A valve stem with an adjustable tire pressure detector has a tire pressure detector, a valve stem body, a conducting member and a fastening assembly. The tire pressure detector has a guiding slot, a concave surface and a convex surface. The guiding slot is formed through the tire pressure detector and forms two openings. The concave surface and the convex surface are formed on the tire pressure detector respectively adjacent to the openings. The valve stem body is moveably mounted through the guiding slot and has a head being moveably mounted on the concave surface. The conducting member is mounted on the concave surface or the convex surface and is electrically contacted to the valve stem body and the tire pressure detector. The fastening assembly mounts the valve stem body on a rim securely.

Abstract translation: 具有可调轮胎压力检测器的阀杆具有轮胎压力检测器，阀杆本体，导电构件和紧固组件。 轮胎压力检测器具有引导槽，凹面和凸面。 引导槽通过轮胎压力检测器形成，形成两个开口。 分别在与开口相邻的轮胎压力检测器上形成凹面和凸面。 阀杆体可移动地安装穿过引导槽并且具有可移动地安装在凹面上的头部。 导电构件安装在凹面或凸面上并与阀杆本体和轮胎压力检测器电接触。 紧固组件将阀杆本体安装在边缘上。

公开(公告)号：US20060091478A1

公开(公告)日：2006-05-04

申请号：US10980165

申请日：2004-11-04

Applicant: Cheng Lee ,  Chih Chuang ,  Tai Chen

Inventor： Cheng Lee ,  Chih Chuang ,  Tai Chen

IPC: H01L29/06

CPC classification number: H01L21/28114 ,  H01L21/28061 ,  H01L21/76897

Abstract: A semiconductor gate structure is described, which comprises a substrate, a gate oxide positioned on the substrate, a first conductive layer positioned on the gate oxide and a second conductive layer positioned on the first conductive layer. The second conductive layer comprises a bottom portion positioned on the first conductive layer, and an upper portion positioned on the bottom portion. The width of the bottom portion is equal to that of the first conductive layer, and one side of the upper portion is aligned to one side of the bottom potion, wherein the other side of the upper portion possesses at least a lateral concave. A bit-line contact metal is subsequently formed next to the concave.

Abstract translation: 描述了半导体栅极结构，其包括衬底，位于衬底上的栅极氧化物，位于栅极氧化物上的第一导电层和位于第一导电层上的第二导电层。 第二导电层包括位于第一导电层上的底部和位于底部的上部。 底部的宽度等于第一导电层的宽度，并且上部的一侧与底部的一侧对准，其中上部的另一侧至少具有侧凹。 随后在凹部附近形成位线接触金属。

公开(公告)号：US20050212394A1

公开(公告)日：2005-09-29

申请号：US11091495

申请日：2005-03-29

Applicant: Jing-Shie Lin ,  Yi-Lung Chiang ,  Chin-Tien Hsiao ,  Chia-Chih Chuang

Inventor： Jing-Shie Lin ,  Yi-Lung Chiang ,  Chin-Tien Hsiao ,  Chia-Chih Chuang

IPC: G06F3/14 ,  G09G5/02 ,  G09G5/14 ,  G09G5/36 ,  H01J1/02 ,  H01J1/304 ,  H01J31/12 ,  H04N1/46 ,  H04N1/60 ,  H04N17/02

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30469

Abstract: A carbon nanotube substrate structure including a substrate and a conductive layer disposed thereon. The carbon nanotube layer or the conductive layer has numerous support particles with a diameter smaller than the length of the carbon nanotube of the carbon nanotube layer. The carbon nanotubes, the conductive layer and the support particles are adhered to each other by means of a glue. The carbon nanotubes lean on the support particles, whereby the carbon nanotubes can stand and protrude from the surface of the carbon nanotube layer to serve as field emission sources.

Abstract translation: 一种碳纳米管基板结构，其包括基板和设置在其上的导电层。 碳纳米管层或导电层具有直径小于碳纳米管层的碳纳米管的长度的许多载体颗粒。 碳纳米管，导电层和载体颗粒通过胶粘剂彼此粘合。 碳纳米管靠在载体颗粒上，由此碳纳米管可以从碳纳米管层的表面放置并突出以用作场致发射源。

公开(公告)号：US06287909B1

公开(公告)日：2001-09-11

申请号：US09578227

申请日：2000-05-24

Applicant: Yi-Min Jen ,  Tse-Yi Lu ,  Yu-Chih Chuang

Inventor： Yi-Min Jen ,  Tse-Yi Lu ,  Yu-Chih Chuang

IPC: H01L218234

CPC classification number: H01L27/11

Abstract: A method of fabricating a buried contact in a static random access memory. A gate oxide layer, a first conducting layer and a masking layer are formed sequentially on a substrate. A buried contact opening is formed inside the gate oxide layer, the first conducting layer and the masking layer, which opening exposes a part of the substrate. An epitaxial layer is formed inside the buried contact opening, which epitaxial layer fills up the buried contact opening. After the masking layer is removed, a second conducting layer is formed above the substrate. A buried contact is formed in the substrate that is below the epitaxial layer. The gate oxide layer, the first conducting layer, the epitaxial layer and second conducting layer are patterned to expose a part of the substrate and a part of the buried contact. A source/drain is formed in the substrate and a part of the source/drain is mixed with a part of the buried contact.

Abstract translation: 一种在静态随机存取存储器中制造掩埋触点的方法。 栅极氧化层，第一导电层和掩模层依次形成在基板上。 掩模接触开口形成在栅极氧化物层内，第一导电层和掩蔽层中，该开口露出基板的一部分。 在埋入接触开口内形成外延层，该外延层填充埋入的接触开口。 在去除掩模层之后，在衬底上方形成第二导电层。 在衬底中形成在外延层下面的掩埋接触。 图案化栅极氧化物层，第一导电层，外延层和第二导电层，以暴露衬底的一部分和埋入触点的一部分。 源极/漏极形成在衬底中，并且源极/漏极的一部分与埋入触点的一部分混合。

公开(公告)号：US5830772A

公开(公告)日：1998-11-03

申请号：US526073

申请日：1995-09-08

Applicant: Che-Pin Tseng ,  Nai-Jen Yeh ,  Yu-Chih Chuang ,  Cheng-Chih Kung

Inventor： Che-Pin Tseng ,  Nai-Jen Yeh ,  Yu-Chih Chuang ,  Cheng-Chih Kung

IPC: H01L21/761 ,  H01L21/8246 ,  H01L21/44 ,  H01L21/76

CPC classification number: H01L27/11293 ,  H01L21/761

Abstract: Although the spacers are formed on the sidewalls of gate electrode and words lines via the same steps of deposition and etch-back processes, only the spacers disposed at the sidewalls of the gate electrode are practical for fabricating peripheral devices with LDD structure, and such fabrication is impractical in the memory cell region. On the contrary, the region beneath the spacers disposed at the sidewalls of word lines will become the path through which leakage current flows. The present invention makes use a shielding layer to cover the second active region as a masking, and then removes the spacers disposed at the sidewalls of word lines. Afterwards, isolating regions are formed through one implantation procedure to thereby decrease leakage current and simplify the process flow.

Abstract translation: 虽然通过沉积和回蚀工艺的相同步骤在栅极和字线的侧壁上形成间隔物，但是仅设置在栅电极的侧壁处的间隔物实际上用于制造具有LDD结构的外围器件，并且这种制造 在记忆细胞区域是不切实际的。 相反，位于字线侧壁的间隔物下方的区域将成为漏电流流过的路径。 本发明利用屏蔽层覆盖作为掩蔽的第二有源区，然后去除设置在字线侧壁的间隔物。 之后，通过一个注入程序形成隔离区域，从而减少漏电流并简化工艺流程。

公开(公告)号：US5632026A

公开(公告)日：1997-05-20

申请号：US396380

申请日：1995-02-28

Applicant: Te-Chih Chuang

Inventor： Te-Chih Chuang

IPC: G04C3/00 ,  G04C21/14 ,  G04G13/00 ,  G06F12/06 ,  G06F12/08 ,  G10L13/00 ,  G06F12/16

CPC classification number: G06F12/0888 ,  G06F12/0804 ,  G06F12/0891 ,  G06F12/0638

Abstract: A computer program management system having a first memory device containing firmware, a shadow processing device for copying the firmware from the first memory device to a shadow region of a system memory device, a cache RAM, and a flush device. Firmware is copied from the shadow region of the system memory device to the cache RAM for execution by the CPU. If an attempt is made to write to the shadow region of the system memory device, the flush device causes the CPU to flush the contents of the cache RAM.Alternatively, the system may have a first memory device containing firmware, a shadow processing device for copying the firmware from the first memory device to a shadow region of a system memory device, a cache RAM, and a disabling device. In this embodiment of an attempt is made to write to the shadow region of the system memory device, the disabling device causes the CPU to prevent the data from being written to the cache RAM.

Abstract translation: 一种具有包含固件的第一存储装置的计算机程序管理系统，用于将固件从第一存储装置复制到系统存储装置的阴影区域的影子处理装置，高速缓冲存储器RAM和冲洗装置。 固件从系统存储设备的阴影区域复制到高速缓存RAM，以供CPU执行。 如果尝试写入系统存储器件的阴影区域，则刷新装置使CPU刷新高速缓存RAM的内容。 或者，系统可以具有包含固件的第一存储器设备，用于将固件从第一存储器设备复制到系统存储器设备的阴影区域的影子处理设备，高速缓存RAM和禁用设备。 在该实施例中，尝试写入系统存储器件的阴影区域时，禁用装置使CPU防止将数据写入高速缓存RAM。

公开(公告)号：USD374338S

公开(公告)日：1996-10-08

申请号：US34474

申请日：1995-02-03

Applicant: Ming-Chih Chuang

Designer： Ming-Chih Chuang