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    HIGH-BRIGHTNESS LIGHT EMITTING DIODE
    1.
    发明申请
    HIGH-BRIGHTNESS LIGHT EMITTING DIODE 有权
    高亮度发光二极管

    公开(公告)号：US20120049234A1

    公开(公告)日：2012-03-01

    申请号：US12943918

    申请日：2010-11-10

    Applicant: Chih-Ching Cheng

    Inventor： Chih-Ching Cheng

    IPC: H01L33/42 ,  H01L33/46

    CPC classification number: H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0016

    Abstract: A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, a trench penetrating the second semiconductor layer and the active layer thereby exposing a portion of the first semiconductor layer, an first electrode disposed at the bottom of the trench, an insulating layer covering the trench and the first electrode, and a second electrode disposed overlying the insulating layer in parallel with the first electrode, wherein the second electrode overlaps with the first electrode.

    Abstract translation: 发光二极管包括衬底，衬底上的第一半导体层，第一半导体层上方的有源层，有源层上方的第二半导体层，穿透第二半导体层和有源层的沟槽，从而暴露部分 所述第一半导体层的第一电极，设置在所述沟槽的底部的第一电极，覆盖所述沟槽和所述第一电极的绝缘层和与所述第一电极平行地设置在所述绝缘层上的第二电极，其中所述第二电极与 第一个电极。

    Substrate for fabricating light emitting device and light emitting device fabricated therefrom
    2.
    发明申请
    Substrate for fabricating light emitting device and light emitting device fabricated therefrom 审中-公开
    用于制造发光器件的基板和由其制造的发光器件

    公开(公告)号：US20100006862A1

    公开(公告)日：2010-01-14

    申请号：US12453409

    申请日：2009-05-11

    Applicant: Chih-Ching Cheng

    Inventor： Chih-Ching Cheng

    IPC: H01L33/00 ,  B32B3/00

    CPC classification number: H01L33/22 ,  H01L33/16 ,  Y10T428/24479

    Abstract: The invention provides a substrate for fabricating a light emitting device and the light emitting device fabricated therefrom. The substrate includes at least one platform region having a first facet direction for epitaxial growth; and a plurality of continuous protruded portions surrounding the at least one platform region to isolate the at least one platform region from another platform region, wherein the first facet direction is substantially excluded from facet directions of the plurality of continuous protruded portions. Since facet directions of the plurality of continuous protruded portions substantially do not include the first facet direction, during formation of the light emitting device, epitaxial growth is mainly conducted on the at least one platform region, which may prevent epitaxial defects from generating and enhance external quantum efficiency of the light emitting device.

    Abstract translation: 本发明提供一种用于制造发光器件的衬底和由其制造的发光器件。 衬底包括具有用于外延生长的第一小面方向的至少一个平台区域; 以及围绕所述至少一个平台区域的多个连续突出部分，以将所述至少一个平台区域与另一个平台区域隔离，其中所述第一小面方向基本上从所述多个连续突出部分的小平面方向排除。 由于多个连续突出部分的面方向基本上不包括第一小面方向，所以在形成发光器件期间，外延生长主要在至少一个平台区域上进行，这可以防止外延缺陷产生和增强外部 发光器件的量子效率。

    Epi-structure with uneven multi-quantum well and the method thereof
    4.
    发明申请
    Epi-structure with uneven multi-quantum well and the method thereof 有权
    具有不均匀多量子阱的Epi结构及其方法

    公开(公告)号：US20080191190A1

    公开(公告)日：2008-08-14

    申请号：US11798750

    申请日：2007-05-16

    Applicant: Tzong-Liang Tsai ,  Chih-Ching Cheng

    Inventor： Tzong-Liang Tsai ,  Chih-Ching Cheng

    IPC: H01L33/00

    CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333 ,  H01S2304/04

    Abstract: An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.

    Abstract translation: 发光装置的Epi结构，包括：在基板上形成的第一半导体导电层; 在具有多量子阱（MQW）的第一半导体导电层上形成的有源层; 以及形成在所述有源层上的第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和活性层之间被散射，以形成不均匀的多量子阱。

    Method for dicing a diced optoelectronic semiconductor wafer
    7.
    发明授权
    Method for dicing a diced optoelectronic semiconductor wafer 有权
    用于切割切割的光电半导体晶片的方法

    公开(公告)号：US08143081B2

    公开(公告)日：2012-03-27

    申请号：US11706822

    申请日：2007-02-13

    Applicant: Chih-Ching Cheng ,  Chiung-Chi Tsai

    Inventor： Chih-Ching Cheng ,  Chiung-Chi Tsai

    IPC: H01L21/00

    CPC classification number: H01L33/0095 ,  H01L33/20 ,  Y10T83/0304

    Abstract: A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.

    Abstract translation: 用于切割光电半导体晶片的方法具有制备光电子半导体晶片，激光划线，金刚石锯切割和形成光电子半导体管芯的步骤。 用于切割光电半导体晶片的产品具有基板和外延层。 基板具有第一表面，第二表面和两个粗糙表面。 粗糙表面通过激光​​划片晶片形成，以在晶片上限定多个引导槽，并且金刚石锯沿着引导槽切割晶片。 在衬底的第一表面上外延地形成外延层。

    LED packaged structure and applications of LED as light source
    8.
    发明授权
    LED packaged structure and applications of LED as light source 有权
    LED封装结构和应用LED作为光源

    公开(公告)号：US07915605B2

    公开(公告)日：2011-03-29

    申请号：US11984730

    申请日：2007-11-21

    Applicant: Tzong-Liang Tsai ,  Chih-Ching Cheng

    Inventor： Tzong-Liang Tsai ,  Chih-Ching Cheng

    IPC: H01L33/00

    CPC classification number: H01L33/24 ,  F21K9/27 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L33/06

    Abstract: LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well.

    Abstract translation: 公开了LED封装结构及其应用，其特征在于：在具有多量子阱的第一半导体导电层上形成LED或LED封装结构中的有源层; 并且在所述有源层上形成第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和有源层之间被散射，以形成不均匀的多量子阱。

    Semiconductor structure combination for epitaxy of semiconductor optoelectronic device
    9.
    发明申请
    Semiconductor structure combination for epitaxy of semiconductor optoelectronic device 有权
    半导体光电子器件外延半导体结构组合

    公开(公告)号：US20090001394A1

    公开(公告)日：2009-01-01

    申请号：US11987640

    申请日：2007-12-03

    Applicant: Chih-Ching Cheng ,  Tzong-Liang Tsai

    Inventor： Chih-Ching Cheng ,  Tzong-Liang Tsai

    IPC: H01L33/00

    CPC classification number: H01L33/007 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/0262

    Abstract: The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide at least one first site for the growth of at least one first epitaxial crystal of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide at least one third site for the growth of at least one third epitaxial crystal of the semiconductor material toward the first preferred orientation.

    Abstract translation: 本发明公开了一种用于半导体光电子器件外延的半导体结构组合及其制造。 根据本发明的半导体结构组合包括基板和半导体材料。 基板具有形成在上表面上的上表面和凹部。 凹槽的侧壁提供至少一个第一位置，用于朝着第一优选取向生长半导体材料的至少一个第一外延晶体。 凹部的底部提供第二位置，用于朝向第一优选取向生长半导体材料的第二外延晶体。 与凹部相邻的平坦区域提供至少一个第三位置，用于朝向第一优选取向生长半导体材料的至少一个第三外延晶体。

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