公开(公告)号：US20050073453A1

公开(公告)日：2005-04-07

申请号：US10676950

申请日：2003-10-01

Applicant: Eric Cheng ,  Wen-Lung Shieh ,  Chih-Hung Tseng ,  Hipolk Lu

Inventor： Eric Cheng ,  Wen-Lung Shieh ,  Chih-Hung Tseng ,  Hipolk Lu

IPC: H03M3/00 ,  H03M1/78

CPC classification number: H03M3/50

Abstract: System of multi-channel shared resistor-string digital-to-analog converters comprises a time-sharing interpolator converting the multi-channel digital audio input at low sample rate to the multi-channel digital audio output at high sample rate, a time-sharing sigma-delta modulator modulating the multi-channel digital audio input with a long sample wordlength from the interpolator to be a multi-channel digital audio output with a shorter sample wordlength, multi-channel shared resistor-string digital-to-analog converters converting the multi-channel digital audio input to be a multi-channel staircase analog signal output, and one low-order RC filter for each channel further attenuating the out-of-band noise in the analog staircase analog output, especially the high-frequency residue images.

Abstract translation: 多通道共享电阻串数模转换器的系统包括一个分时内插器，以低采样率将多通道数字音频输入转换为高采样率的多通道数字音频输出，分时 Σ-Δ调制器将来自内插器的长采样字长的多通道数字音频输入调制成具有较短采样字长度的多通道数字音频输出，多通道共享电阻串数模转换器将 多通道数字音频输入为多通道阶梯模拟信号输出，每个通道一个低阶RC滤波器进一步衰减模拟阶梯模拟输出中的带外噪声，特别是高频残留图像 。

公开(公告)号：US06696846B1

公开(公告)日：2004-02-24

申请号：US10228706

申请日：2002-08-27

Applicant: Wen-Lung Shieh ,  Chih-Hung Tseng

Inventor： Wen-Lung Shieh ,  Chih-Hung Tseng

IPC: G01R1710

CPC classification number: G01R17/06

Abstract: A self-balanced active current bridge for measuring the impedance of an external device or an output current, including an input potential source and operation amplifier connected to the input potential source via a first input terminal of the operation amplifier. A balancing bridge is coupled to a first output terminal and a second output terminal of the operation amplifier. A controlled potential source is coupled to the balancing bridge and used to maintain the balance state of the balancing bridge. A resistance is connected between the balancing bridge and an output terminal of the controlled potential source. Wherein the external device is connected a first node between the balancing bridge and a second input terminal of the operation amplifier. Wherein the controlled potential source is coupled to the balancing bridge to maintain the balance state, thereby constructing the self-balanced active current bridge for measuring the impedance of the external device or the output current by means of measuring the parameters of the resistance.

Abstract translation: 一种用于测量外部设备或输出电流的阻抗的自平衡有源电流桥，包括通过运算放大器的第一输入端连接到输入电位的输入电位源和运算放大器。 平衡桥耦合到运算放大器的第一输出端和第二输出端。 受控电位源耦合到平衡桥，用于维持平衡桥的平衡状态。 电阻连接在平衡桥和受控电位源的输出端之间。 其中外部设备连接在平衡桥和运算放大器的第二输入端之间的第一节点。 其中受控电位源耦合到平衡桥以保持平衡状态，从而通过测量电阻的参数构建用于测量外部装置的阻抗或输出电流的自平衡有功电流桥。

公开(公告)号：USD437595S1

公开(公告)日：2001-02-13

申请号：US29122221

申请日：2000-04-19

Applicant: Shen Jih Chang ,  Chih Hung Tseng

Designer： Shen Jih Chang ,  Chih Hung Tseng

公开(公告)号：US11260933B2

公开(公告)日：2022-03-01

申请号：US16664551

申请日：2019-10-25

Applicant: Chih-Hung Tseng

Inventor： Chih-Hung Tseng

IPC: B62K25/08 ,  B62J99/00 ,  B62J45/00 ,  B62L3/00

Abstract: A shock-absorbing front fork assembly of a motorcycle includes a front fork, a pressure buffering cylinder and a control valve disposed between the front fork and the pressure buffering cylinder and electrically connected with a brake system to control the communication between the front fork and the pressure buffering cylinder according to the operation of the brake system. When the brake system is not actuated, the control valve is open to make the front fork communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively smaller. When the brake system is actuated, the control valve is close to make the front fork not communicate with the pressure buffering cylinder, thereby making the spring supporting force relatively larger. Therefore, the spring supporting force is adjusted by the brake operation, that raises the riding comfort and safety.

公开(公告)号：US08278179B2

公开(公告)日：2012-10-02

申请号：US12720476

申请日：2010-03-09

Applicant: Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

Inventor： Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

IPC: H01L21/336

CPC classification number: H01L29/66795 ,  H01L21/823821

Abstract: A method of forming a semiconductor structure includes providing a substrate including a fin at a surface of the substrate, and forming a fin field-effect transistor (FinFET), which further includes forming a gate stack on the fin; forming a thin spacer on a sidewall of the gate stack; and epitaxially growing a epitaxy region starting from the fin. After the step of epitaxially growing the epitaxy region, a main spacer is formed on an outer edge of the thin spacer. After the step of forming the main spacer, a deep source/drain implantation is performed to form a deep source/drain region for the FinFET.

Abstract translation: 一种形成半导体结构的方法包括在衬底的表面提供包括鳍的衬底，以及形成鳍状场效应晶体管（FinFET），其还包括在鳍上形成栅叠层; 在所述栅极堆叠的侧壁上形成薄的间隔物; 并从翅片开始外延生长外延区域。 在外延生长外延区域的步骤之后，在间隔物的外边缘上形成主间隔物。 在形成主间隔物的步骤之后，进行深源极/漏极注入以形成用于FinFET的深源极/漏极区域。

公开(公告)号：US20110223736A1

公开(公告)日：2011-09-15

申请号：US12720476

申请日：2010-03-09

Applicant: Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

Inventor： Da-Wen Lin ,  Che-Min Chu ,  Tsung-Hung Li ,  Chih-Hung Tseng ,  Yen-Chun Lin ,  Chung-Cheng Wu

IPC: H01L21/336

CPC classification number: H01L29/66795 ,  H01L21/823821

Abstract: A method of forming a semiconductor structure includes providing a substrate including a fin at a surface of the substrate, and forming a fin field-effect transistor (FinFET), which further includes forming a gate stack on the fin; forming a thin spacer on a sidewall of the gate stack; and epitaxially growing a epitaxy region starting from the fin. After the step of epitaxially growing the epitaxy region, a main spacer is formed on an outer edge of the thin spacer. After the step of forming the main spacer, a deep source/drain implantation is performed to form a deep source/drain region for the FinFET.

Abstract translation: 一种形成半导体结构的方法包括在衬底的表面提供包括鳍的衬底，以及形成鳍状场效应晶体管（FinFET），其还包括在鳍上形成栅叠层; 在所述栅极堆叠的侧壁上形成薄的间隔物; 并从翅片开始外延生长外延区域。 在外延生长外延区域的步骤之后，在间隔物的外边缘上形成主间隔物。 在形成主间隔物的步骤之后，进行深源极/漏极注入以形成用于FinFET的深源极/漏极区域。

公开(公告)号：US20080142908A1

公开(公告)日：2008-06-19

申请号：US11877812

申请日：2007-10-24

Applicant: Chih-Hung Tseng ,  Hsien-Ta Wu ,  Cheng-Yi Peng ,  Chee-Wee Liu

Inventor： Chih-Hung Tseng ,  Hsien-Ta Wu ,  Cheng-Yi Peng ,  Chee-Wee Liu

IPC: H01L29/78 ,  H01L21/3205

CPC classification number: H01L21/28088 ,  H01L29/4966

Abstract: A method of using an III-V semiconductor material as a gate electrode is provided. The method includes steps of providing a substrate; forming a gate dielectric layer on the substrate; and forming the III-V semiconductor material on the gate dielectric layer.

Abstract translation: 提供了使用III-V族半导体材料作为栅电极的方法。 该方法包括提供衬底的步骤; 在所述基板上形成栅介电层; 以及在栅介质层上形成III-V族半导体材料。

公开(公告)号：USD488025S1

公开(公告)日：2004-04-06

申请号：US29177516

申请日：2003-03-10

Applicant: Chih-Hung Tseng

Designer： Chih-Hung Tseng

公开(公告)号：US08007128B2

公开(公告)日：2011-08-30

申请号：US12206652

申请日：2008-09-08

Applicant: Ting-Feng Wu ,  Chun-Hung Lin ,  Chih-Hung Tseng

Inventor： Ting-Feng Wu ,  Chun-Hung Lin ,  Chih-Hung Tseng

IPC: F21S4/00 ,  F21V21/00

CPC classification number: F21S8/086 ,  F21K9/20 ,  F21V15/01 ,  F21V21/116 ,  F21V21/30 ,  F21V23/04 ,  F21V29/767 ,  F21V29/83 ,  F21W2131/103 ,  F21Y2103/10 ,  F21Y2115/10 ,  G02B6/001 ,  H05B33/0803 ,  Y10S362/80

Abstract: A lighting device has a light-bar mount and multiple light bars. The light-bar mount is integrally formed from a board. The light bars are mounted on the light-bar mount and each light bar has a heat sink, a circuit board and multiple high-power LED modules. The heat sink is detachably mounted in the light-bar mount. The circuit board is mounted in the heat sink. The high-power LED modules are mounted on the heat sink and electrically connected to the circuit board for providing outward illumination.

Abstract translation: 照明装置具有灯条安装件和多个灯条。 灯条安装座由板一体形成。 灯条安装在灯杆安装座上，每个灯条都有散热器，电路板和多个大功率LED模块。 散热器可拆卸地安装在灯条安装座中。 电路板安装在散热器中。 大功率LED模块安装在散热器上并电连接到电路板以提供向外照明。

公开(公告)号：US20090255739A1

公开(公告)日：2009-10-15

申请号：US12082807

申请日：2008-04-14

Applicant: Chih-Hung Tseng

Inventor： Chih-Hung Tseng

IPC: A61G5/04

CPC classification number: A61G5/043 ,  A61G5/06 ,  A61G5/1078

Abstract: A power wheelchair includes a base frame and a seat frame. The base frame includes front and rear frame members, a pair of front wheels connected rotatably to the front frame member, a pair of rear wheels connected rotatably to the rear frame member, and a pair of mid-wheels connected rotatably to the front frame member and disposed between the front and rear wheels. The seat frame is connected to the rear frame member. The rear frame member is connected pivotally to the front frame member, and extends above the front frame member.

Abstract translation: 电动轮椅包括底架和座椅框架。 基座框架包括前框架构件和后框架构件，可旋转地连接到前框架构件的一对前轮，可旋转地连接到后框架构件的一对后轮，以及可旋转地连接到前框架构件的一对中间轮 并且设置在前轮和后轮之间。 座椅框架连接到后框架构件。 后框架构件枢转地连接到前框架构件，并且在前框架构件上方延伸。