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公开(公告)号：US07706204B2
公开(公告)日：2010-04-27
申请号：US12406654
申请日：2009-03-18
申请人： Jin-Hyeok Choi , Sam-Yong Bahng , Chil-Hee Chung
发明人： Jin-Hyeok Choi , Sam-Yong Bahng , Chil-Hee Chung
IPC分类号： G11C5/14
摘要： A memory card includes a non-volatile memory; and a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory. The power management unit boosts/bypasses the external supply voltage based on whether the external supply voltage is lower than a detection voltage and then outputs the boosted/bypassed voltage as the operating voltage of the non-volatile memory.
摘要翻译： 存储卡包括非易失性存储器; 以及电源管理单元，用于接收外部电源电压以向非易失性存储器提供工作电压。 电源管理单元根据外部电源电压是否低于检测电压来提升/旁路外部电源电压，然后输出升压/旁路电压作为非易失性存储器的工作电压。
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公开(公告)号：US07495989B2
公开(公告)日：2009-02-24
申请号：US11484532
申请日：2006-07-11
申请人： Jin-Hyeok Choi , Sam-Yong Bahng , Chil-Hee Chung
发明人： Jin-Hyeok Choi , Sam-Yong Bahng , Chil-Hee Chung
IPC分类号： G11C5/14
摘要： A memory card includes a non-volatile memory; and a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory. The power management unit boosts/bypasses the external supply voltage based on whether the external supply voltage is lower than a detection voltage and then outputs the boosted/bypassed voltage as the operating voltage of the non-volatile memory.
摘要翻译： 存储卡包括非易失性存储器; 以及电源管理单元，用于接收外部电源电压以向非易失性存储器提供工作电压。 电源管理单元根据外部电源电压是否低于检测电压来提升/旁路外部电源电压，然后输出升压/旁路电压作为非易失性存储器的工作电压。
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公开(公告)号：US07453741B2
公开(公告)日：2008-11-18
申请号：US10960733
申请日：2004-10-07
申请人： Sang-Bum Kim , Sam-Yong Bahng , Chil-Hee Chung
发明人： Sang-Bum Kim , Sam-Yong Bahng , Chil-Hee Chung
IPC分类号： G11C5/14
摘要： A semiconductor device card, such as a memory card for example, includes a semiconductor device, a working voltage indicator, and a working voltage generator. A working voltage indicator is set to indicate a desired level of a working voltage corresponding to the semiconductor device. A working voltage generator generates the working voltage having the desired level and being coupled to the semiconductor device. Thus, the semiconductor device card is easily adaptable to accommodate various working voltages of the semiconductor device.
摘要翻译： 诸如存储卡的半导体器件卡例如包括半导体器件，工作电压指示器和工作电压发生器。 工作电压指示器被设置为指示对应于半导体器件的工作电压的期望电平。 工作电压发生器产生具有所需电平的工作电压并耦合到半导体器件。 因此，半导体器件卡容易适应于适应半导体器件的各种工作电压。
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公开(公告)号：US20070236996A1
公开(公告)日：2007-10-11
申请号：US11762537
申请日：2007-06-13
申请人： Jin-Hyeok CHOI , Sam-Yong BAHNG , Chil-Hee CHUNG
发明人： Jin-Hyeok CHOI , Sam-Yong BAHNG , Chil-Hee CHUNG
IPC分类号： G11C16/30
摘要： A memory card includes a non-volatile memory; and a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory. The power management unit boosts/bypasses the external supply voltage based on whether the external supply voltage is lower than a detection voltage and then outputs the boosted/bypassed voltage as the operating voltage of the non-volatile memory.
摘要翻译： 存储卡包括非易失性存储器; 以及电源管理单元，用于接收外部电源电压以向非易失性存储器提供工作电压。 电源管理单元根据外部电源电压是否低于检测电压来提升/旁路外部电源电压，然后输出升压/旁路电压作为非易失性存储器的工作电压。
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公开(公告)号：US20050141317A1
公开(公告)日：2005-06-30
申请号：US10960733
申请日：2004-10-07
申请人： Sang-Bum Kim , Sam-Yong Bahng , Chil-Hee Chung
发明人： Sang-Bum Kim , Sam-Yong Bahng , Chil-Hee Chung
摘要： A semiconductor device card, such as a memory card for example, includes a semiconductor device, a working voltage indicator, and a working voltage generator. A working voltage indicator is set to indicate a desired level of a working voltage corresponding to the semiconductor device. A working voltage generator generates the working voltage having the desired level and being coupled to the semiconductor device. Thus, the semiconductor device card is easily adaptable to accommodate various working voltages of the semiconductor device.
摘要翻译： 诸如存储卡的半导体器件卡例如包括半导体器件，工作电压指示器和工作电压发生器。 工作电压指示器被设置为指示对应于半导体器件的工作电压的期望电平。 工作电压发生器产生具有所需电平的工作电压并耦合到半导体器件。 因此，半导体器件卡容易适应于适应半导体器件的各种工作电压。
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6.发明申请COATING COMPOSITION FOR DUV FILTERING, METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE METHOD 有权用于DUV过滤的涂料组合物，使用该方法形成光催化剂图案的方法和使用该方法制备半导体器件的方法公开(公告)号：US20120021355A1
公开(公告)日：2012-01-26
申请号：US13188670
申请日：2011-07-22
申请人： Hyun-woo Kim , Hai-sub Na , Chil-hee Chung , Han-ku Cho
发明人： Hyun-woo Kim , Hai-sub Na , Chil-hee Chung , Han-ku Cho
IPC分类号： H01L21/311 , G03F7/039 , G03F7/26 , G02B5/22 , H01L21/02
CPC分类号： G03F7/0388 , G02B5/208 , G02B5/22 , G03F7/095 , G03F7/11
摘要： Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/μm or greater with respect to 193-nm incident light.
摘要翻译： 提供了一种在极紫外（EUV）暴露期间用于深紫外（DUV）过滤的涂料组合物，该涂料组合物包括约100重量份的包含第一溶剂（第一溶剂为醇溶剂）的溶剂; 和约0.05重量份至约5重量份的相对于193纳米入射光的吸收度为约50％/μm或更大的涂层聚合物。
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公开(公告)号：US20090180346A1
公开(公告)日：2009-07-16
申请号：US12406654
申请日：2009-03-18
申请人： Jin-Hyeok CHOI , Sam-Yong Bahng , Chil-Hee Chung
发明人： Jin-Hyeok CHOI , Sam-Yong Bahng , Chil-Hee Chung
IPC分类号： G11C5/14
摘要： A memory card includes a non-volatile memory; and a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory. The power management unit boosts/bypasses the external supply voltage based on whether the external supply voltage is lower than a detection voltage and then outputs the boosted/bypassed voltage as the operating voltage of the non-volatile memory.
摘要翻译： 存储卡包括非易失性存储器; 以及电源管理单元，用于接收外部电源电压以向非易失性存储器提供工作电压。 电源管理单元根据外部电源电压是否低于检测电压来提升/旁路外部电源电压，然后输出升压/旁路电压作为非易失性存储器的工作电压。
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公开(公告)号：US07518939B2
公开(公告)日：2009-04-14
申请号：US11762537
申请日：2007-06-13
申请人： Jin-Hyeok Choi , Sam-Yong Bahng , Chil-Hee Chung
发明人： Jin-Hyeok Choi , Sam-Yong Bahng , Chil-Hee Chung
IPC分类号： G11C5/14
摘要： A memory card includes a non-volatile memory; and a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory. The power management unit boosts/bypasses the external supply voltage based on whether the external supply voltage is lower than a detection voltage and then outputs the boosted/bypassed voltage as the operating voltage of the non-volatile memory.
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9.发明授权Integrated circuit memory devices including programmed memory cells and programmable and erasable memory cells 有权集成电路存储器件包括编程存储器单元和可编程和可擦除存储器单元公开(公告)号：US07102926B2
公开(公告)日：2006-09-05
申请号：US10880800
申请日：2004-06-30
申请人： Byeong-hoon Lee , Chil-hee Chung
发明人： Byeong-hoon Lee , Chil-hee Chung
IPC分类号： G11C16/04
CPC分类号： G11C16/0425
摘要： An integrated circuit memory device includes programmed memory cells and programmable and erasable memory cells. The memory device includes a first memory array block in which programmed memory cells are arranged and a second memory array block in which programmable and erasable memory cells are arranged. The programmed memory cells in the first memory array block may be programmed with predetermined data during a semiconductor manufacturing process, and may be mask read-only memory (ROM) cells. The programmable and erasable memory cells in the second memory array block may be programmed or erased with predetermined data after the semiconductor manufacturing process, and may be electrically erasable and programmable read-only memory (EEPROM) cells or flash memory cells.
摘要翻译： 集成电路存储器件包括编程存储器单元和可编程和可擦除存储器单元。 存储器件包括其中布置有编程存储器单元的第一存储器阵列块和布置可编程和可擦除存储器单元的第二存储器阵列块。 第一存储器阵列块中的编程存储单元可以在半导体制造过程期间用预定数据编程，并且可以是掩模只读存储器（ROM）单元。 第二存储器阵列块中的可编程和可擦除存储单元可以在半导体制造过程之后用预定数据进行编程或擦除，并且可以是电可擦除可编程只读存储器（EEPROM）单元或闪存单元。
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10.发明申请Integrated circuit memory devices including programmed memory cells and programmable and erasable memory cells 有权集成电路存储器件包括编程存储器单元和可编程和可擦除存储器单元公开(公告)号：US20050007822A1
公开(公告)日：2005-01-13
申请号：US10880800
申请日：2004-06-30
申请人： Byeong-hoon Lee , Chil-hee Chung
发明人： Byeong-hoon Lee , Chil-hee Chung
CPC分类号： G11C16/0425
摘要： An integrated circuit memory device includes programmed memory cells and programmable and erasable memory cells. The memory device includes a first memory array block in which programmed memory cells are arranged and a second memory array block in which programmable and erasable memory cells are arranged. The programmed memory cells in the first memory array block may be programmed with predetermined data during a semiconductor manufacturing process, and may be mask read-only memory (ROM) cells. The programmable and erasable memory cells in the second memory array block may be programmed or erased with predetermined data after the semiconductor manufacturing process, and may be electrically erasable and programmable read-only memory (EEPROM) cells or flash memory cells.
摘要翻译： 集成电路存储器件包括编程存储器单元和可编程和可擦除存储器单元。 存储器件包括其中布置有编程存储器单元的第一存储器阵列块和布置可编程和可擦除存储器单元的第二存储器阵列块。 第一存储器阵列块中的编程存储单元可以在半导体制造过程期间用预定数据编程，并且可以是掩模只读存储器（ROM）单元。 第二存储器阵列块中的可编程和可擦除存储单元可以在半导体制造过程之后用预定数据进行编程或擦除，并且可以是电可擦除可编程只读存储器（EEPROM）单元或闪存单元。
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